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型号 功能描述 生产厂家 企业 LOGO 操作
MDS1100

a high power COMMON BASE bipolar transistor.

GENERAL DESCRIPTION The MDS1100 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems at 1030 MHz, with the pulse width and duty required for MODE-S applications. The device has gold thin-film metalization and emitter ballasting for proven highest MTTF. The transisto

MICROSEMI

美高森美

MDS1100

1100 Watts, 50 Volts Pulsed Avionics at 1030 MHz

GENERAL DESCRIPTION The MDS1100 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems at 1030 MHz, with the pulse width and duty required for MODE-S applications. The device has gold thin-film metalization and emitter ballasting for proven highest MTTF. The transisto

ADPOW

MDS1100

封装/外壳:55TU-1 包装:散装 描述:RF TRANS NPN 65V 1.03GHZ 55TU-1 分立半导体产品 晶体管 - 双极(BJT)- 射频

MICROSEMI

美高森美

Schottky Power Rectifier(Surface Mount Power Package)

Schottky Barrier Rectifier Surface Mount Power Package Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suit

MOTOROLA

摩托罗拉

ULTRAFAST RECTIFIERS 1.0 AMPERE 900-1000 VOLTS

SWITCHMODE Power Rectifiers Ultrafast “E’’ Series with High Reverse Energy Capability . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • 20 mjoules Avalanche Energy Guaranteed • Excellent Prot

MOTOROLA

摩托罗拉

SCHOTTKY BARRIER RECTIFIERS(1.0A,70-100V)

Schottky Barrier Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overly contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and

MOSPEC

统懋

DUAL SWITCHING REGULATOR CONTROL CIRCUIT

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NEC

瑞萨

DUAL SWITCHING REGULATOR CONTROL CIRCUIT

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NEC

瑞萨

MDS1100产品属性

  • 类型

    描述

  • 型号

    MDS1100

  • 制造商

    Microsemi Corporation

  • 功能描述

    MDS1100 - Bulk

  • 制造商

    Microsemi Corporation

  • 功能描述

    RF POWER TRANSISTOR BIPOLAR/HBT

更新时间:2026-8-2 16:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
MICROSEMI/美高森美
23+
TO-59
8510
原装正品代理渠道价格优势
MSC
2447
20
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
MICROSEMI/美高森美
22+
NA
20000
公司只有原装 品质保障
MICROSEMI/美高森美
26+
201
现货供应
Microsemi Corporation
25+
55TU-1
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证
MICROSEMI
25+
55TU-1
7
就找我吧!--邀您体验愉快问购元件!

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