| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
MDF11N65B | N-Channel MOSFET 650V, 12A, 0.65(ohm) General Description These N-channel MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low on state resistance, high switching performance and excellent quality. These devices are suitable device for SMPS, high Speed switching and general purpose applications. Feat | MGCHIP |   | |
MDF11N65B | N-Channel 650V (D-S) Power MOSFET 文件：1.07166 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | |
N-Channel MOSFET 650V, 12A, 0.65(ohm) General Description These N-channel MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low on state resistance, high switching performance and excellent quality. These devices are suitable device for SMPS, high Speed switching and general purpose applications. Feat | MGCHIP | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 12A@ TC=25℃ ·Drain Source Voltage : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.65Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D | ISC 无锡固电 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 8A, RDS(ON) = 0.42W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 8A, RDS(ON) = 0.42W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MAGNACHIP/美格纳 |
24+ |
NA/ |
1000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
MAGNACHIP/美格纳 |
25+ |
TO220F |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
MAGNACHIP/美格纳 |
25+ |
TO-220F |
20300 |
MAGNACHIP/美格纳原装特价MDF11N65B即刻询购立享优惠#长期有货 |
|||
MAGNACHIP/美格纳 |
15+ |
TO-220F |
286 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
MAGNACHIP/美格纳 |
22+ |
TO220F |
12000 |
只做原装、原厂优势渠道、假一赔十 |
|||
MAGNACHIP/美格纳 |
22+23+ |
TO-220F |
8000 |
新到现货，只做原装进口 |
|||
MagnaChip |
25+23+ |
TO-220F |
23827 |
绝对原装正品全新进口深圳现货 |
|||
MAGNACHIP/美格纳 |
24+ |
TO-220F |
5000 |
全新原装正品,现货销售 |
|||
MAGNACHIP/美格纳 |
23+ |
TO220 |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
MAGNACHIP/美格纳 |
24+ |
TO-220F |
47186 |
郑重承诺只做原装进口现货 |
MDF11N65B规格书下载地址
MDF11N65B参数引脚图相关
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2013-1-15
DdatasheetPDF页码索引
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