isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 17.9A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 45mΩ(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

Single N-Channel Trench MOSFET 60V, 17.9A, 45.0m(ohm)

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N-Channel 6 0-V (D-S) MOSFET

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60V N-Ch MOSFET

MALE/FEMALE THREADED STANDOFFS

[KEYSTONE] MALE/FEMALE THREADED STANDOFFS PC 104 MOUNTING KITS NYLON STANDOFFS

Medium Power Microwave MESFET

DESCRIPTION The MGF1951A is a 20mW MESFET for S- to Ku-band driver amplifiers and oscillators. Its lead-less ceramic package assures minimum parasitics. FEATURES • High Gain and High Output Power GLP=9dB, P1dB=13dBm (typ) @ f=12GHz • Leadless Ceramic Package APPLICATION S-

WIRE & CABLE TERMINATION

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MALE/FEMALE THREADED STANDOFFS

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Premium Female/Female Jumper Wires - 20 x 3 (75mm)

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