| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MDA101G | SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere) 文件:21.5 Kbytes Page:2 Pages | RECTRON 丽正 | ||
MDA101G | SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere 文件:226.75 Kbytes Page:3 Pages | RECTRON 丽正 | ||
MDA101G | Bridge Rectifiers | RECTRON 丽正 | ||
HIGH EFFICIENCY RECTIFIERS(1.0A,50-400V) Switchmode Power Rectifiers HIGH EFFICIENCY RECTIFIERS 1.0 AMPERES 50 -- 400 VOLTS | MOSPEC 统懋 | |||
DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60– 80– 100 VOLTS 80 WATTS . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain —hFE= 2500 (Typ) @ IC= 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 30 mAdc | MOTOROLA 摩托罗拉 | |||
WIDE BAND AMPLIFIER CHIPS DESCRIPTION PPG100P and PPG101P are GaAs integrated circuits designed as wide band amplifiers. Both devices are available in chip form. PPG100P is low noise amplifier from 50 MHz to 3 GHz and PPG101P is a medium power amplifier in the same frequency band. These devices are most suitable for the | NEC 瑞萨 | |||
Operational Amplifiers 文件:509.25 Kbytes Page:17 Pages | NSC 国半 | |||
Operational Amplifiers 文件:509.25 Kbytes Page:17 Pages | NSC 国半 |
MDA101G产品属性
- 类型
描述
MDA101G规格书下载地址
MDA101G参数引脚图相关
- nfc芯片
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- ne555定时器
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- msm8625q
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- mos晶体管
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- molex连接器
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MDA101G数据表相关新闻
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•保持在各类离散双极和场稳定的偏置电流效应晶体管 •提供无镇流器使用的辐射源稳定的偏置使用单个的组件和旁路元件 •工作电压为1.8伏在供电电压下宽范围 •降低偏置电流变化由于温度和单位对单位参变化 •占用? 0.5毫瓦的VCC = 2.75 v时 该器件提供了一个参考电压作为直流反馈元件和行为围绕一个外部分立,NPN型晶体管或N沟道场效应管。它允许外部晶体管有其发射器/源,直接接地,而且仍然具有稳定集电极/漏极直流电流。这主要是为了稳定的离散射频
2013-3-17
DdatasheetPDF页码索引
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