位置：首页 > IC中文资料 > MD54SC245AC
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SN54SC245-SEP Radiation-Tolerant, 1.2-V to 5.5-V, Octal Bus Transceivers With 3-State Outputs 1 Features • Vendor item drawing available, VID V62/23616 • Total ionizing dose characterized at 30 krad(Si) – Total ionizing dose characterized radiation lot acceptance testing (TID RLAT) for every wafer lot to 30 krad(Si) • Single-event effects (SEE) characterized: – Single event latch-up | TI 德州仪器 |   | ||
SN54SC245-SEP Radiation-Tolerant, 1.2-V to 5.5-V, Octal Bus Transceivers With 3-State Outputs 1 Features • Vendor item drawing available, VID V62/23616 • Total ionizing dose characterized at 30 krad(Si) – Total ionizing dose characterized radiation lot acceptance testing (TID RLAT) for every wafer lot to 30 krad(Si) • Single-event effects (SEE) characterized: – Single event latch-up | TI 德州仪器 | | ||
SN54SC245-SEP Radiation-Tolerant, 1.2-V to 5.5-V, Octal Bus Transceivers With 3-State Outputs 1 Features • Vendor item drawing available, VID V62/23616 • Total ionizing dose characterized at 30 krad(Si) – Total ionizing dose characterized radiation lot acceptance testing (TID RLAT) for every wafer lot to 30 krad(Si) • Single-event effects (SEE) characterized: – Single event latch-up | TI 德州仪器 | | ||
SN54SC245-SEP Radiation-Tolerant, 1.2-V to 5.5-V, Octal Bus Transceivers With 3-State Outputs 1 Features • Vendor item drawing available, VID V62/23616 • Total ionizing dose characterized at 30 krad(Si) – Total ionizing dose characterized radiation lot acceptance testing (TID RLAT) for every wafer lot to 30 krad(Si) • Single-event effects (SEE) characterized: – Single event latch-up | TI 德州仪器 | | ||
SN54SC245-SEP Radiation-Tolerant, 1.2-V to 5.5-V, Octal Bus Transceivers With 3-State Outputs 1 Features • Vendor item drawing available, VID V62/23616 • Total ionizing dose characterized at 30 krad(Si) – Total ionizing dose characterized radiation lot acceptance testing (TID RLAT) for every wafer lot to 30 krad(Si) • Single-event effects (SEE) characterized: – Single event latch-up | TI 德州仪器 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI |
25+ |
37 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
||||
TI |
25+ |
长期备有现货 |
500000 |
行业低价,代理渠道 |
|||
TI德州仪器 |
22+ |
24000 |
原装正品现货,实单可谈,量大价优 |
||||
TI |
0827+; |
DIP |
75 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
TI |
专业铁帽 |
DIP |
67500 |
铁帽原装主营-可开原型号增税票 |
|||
TI/德州仪器 |
23+ |
CDIP-14 |
9990 |
正规渠道,只有原装! |
|||
TI |
2018+ |
26976 |
代理原装现货/特价热卖! |
||||
TI/德州仪器 |
24+ |
DIP |
66800 |
原厂授权一级代理,专注汽车、医疗、工业、新能源！ |
|||
TI/德州仪器 |
25+ |
原厂封装 |
10280 |
原厂授权代理,专注军工、汽车、医疗、工业、新能源！ |
|||
TI |
23+ |
NA |
320 |
专做原装正品,假一罚百! |
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MD54SC245AC规格书下载地址
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•保持在各类离散双极和场稳定的偏置电流效应晶体管 •提供无镇流器使用的辐射源稳定的偏置使用单个的组件和旁路元件 •工作电压为1.8伏在供电电压下宽范围 •降低偏置电流变化由于温度和单位对单位参变化 •占用？ 0.5毫瓦的VCC = 2.75 v时 该器件提供了一个参考电压作为直流反馈元件和行为围绕一个外部分立，NPN型晶体管或N沟道场效应管。它允许外部晶体管有其发射器/源，直接接地，而且仍然具有稳定集电极/漏极直流电流。这主要是为了稳定的离散射频
2013-3-17
DdatasheetPDF页码索引
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