High voltage NPN Power transistor for standard Definition CRT display

Description The MD2001FX is manufactured using Diffused Collector in Planar Technology adopting new and enhanced high voltage structure. The new MD product series show improved silicon efficiency bringing updated performance to the Horizontal Deflection stage. Features ■ State-of-the-art tech

High voltage NPN power transistor for standard definition CRT display

Description The MD2001FX is manufactured using Diffused Collector in Planar Technology adopting new and enhanced high voltage structure. The new MD product series show improved silicon efficiency bringing updated performance to the Horizontal Deflection stage. Features ■ State-of-the-art tech

封装/外壳：ISOWATT218FX 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 700V 12A ISOWATT-218FX 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

标清CRT显示器的高压NPN功率晶体管

High voltage NPN power transistor for standard definition CRT display

Description The MD2001FX is manufactured using Diffused Collector in Planar Technology adopting new and enhanced high voltage structure. The new MD product series show improved silicon efficiency bringing updated performance to the Horizontal Deflection stage. Features ■ State-of-the-art tech

256KB Asynchronous Secondary Cache Module for PowerPC

The MPC2001 is designed to provide asynchronous 256KB L2 cache for the PowerPC 60x processors. The module is configured as 32K x 64 bits in a 136 pin dual readout single inline memory module (DIMM). The module uses eight of Motorola’s MCM6206 CMOS RAMs. Eight write enables are provided for byte w

900 MHz DOWNCONVERTER LNA/MIXER SILICON MONOLITHIC INTEGRATED CIRCUIT

The MRFIC2001 is an integrated downconverter designed for receivers operating in the 800 MHz to 1.0 GHz frequency range. The design utilizes Motorola’s advanced MOSAIC 3 silicon bipolar RF process to yield superior performance in a cost effective monolithic device. Applications for the MRFIC2001 i

MICROWAVE POWER TRANSISTORS

The RF Line Microwave Power Transistors Designed primarily for large–signal output and driver amplifier stages in the 1.0 to 2.3 GHz frequency range. • Designed for Class B or C, Common Base Power Amplifiers • Specified 28 Volt, 2.0 GHz Characteristics: Output Power — 1.0 to 20 Watts P

High Precision, 6MHz Rail-To-Rail Output Operational Amplifier

文件：430.08 Kbytes Page：11 Pages

High Precision, 6MHz Rail-To-Rail Output Operational Amplifier

文件：430.08 Kbytes Page：11 Pages