High voltage NPN Power transistor for standard Definition CRT display

Description The MD2001FX is manufactured using Diffused Collector in Planar Technology adopting new and enhanced high voltage structure. The new MD product series show improved silicon efficiency bringing updated performance to the Horizontal Deflection stage. Features ■ State-of-the-art tech

High voltage NPN power transistor for standard definition CRT display

Description The MD2001FX is manufactured using Diffused Collector in Planar Technology adopting new and enhanced high voltage structure. The new MD product series show improved silicon efficiency bringing updated performance to the Horizontal Deflection stage. Features ■ State-of-the-art tech

封装/外壳：ISOWATT218FX 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 700V 12A ISOWATT-218FX 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

标清CRT显示器的高压NPN功率晶体管

High voltage NPN power transistor for standard definition CRT display

Description The MD2001FX is manufactured using Diffused Collector in Planar Technology adopting new and enhanced high voltage structure. The new MD product series show improved silicon efficiency bringing updated performance to the Horizontal Deflection stage. Features ■ State-of-the-art tech

1.0 Watt - 28 Volts, Class C Microwave 2000 MHz

GENERAL DESCRIPTION The 2001 is a COMMON BASE transistor capable of providing 1 Watts Class C, RF output power at 2000 MHz. Gold Metalization and diffused ballasting are used to provide high reliability and supreme ruggedness. The transistor uses a fully hermetic High Temperature Solder Sealed pa

US Power Supply Cord with IEC Connector C13, V-Lock, straight

Description - Power Cord, Protection class I, Pin temperature 70 °C, - with V-Lock interlocking system

7½-Digit High Performance Multimeter 8½-Digit High Performance Multimeter

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Snap Bushings

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boxes and ancillary products

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