SINGLE-PHASE GLASS PASSIVATED SILICON MINI BRIDGE RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 0.5 Ampere

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High voltage NPN Power transistor for standard Definition CRT display

Description The MD2001FH is manufactured using Diffused Collector in Planar Technology adopting new and enhanced high voltage structure. The new MD product series show improved silicon efficiency bringing updated performance to the Horizontal Deflection stage. Features ■ State-of-the-art techno

High voltage NPN Power transistor for standard Definition CRT display

Description The MD2001FX is manufactured using Diffused Collector in Planar Technology adopting new and enhanced high voltage structure. The new MD product series show improved silicon efficiency bringing updated performance to the Horizontal Deflection stage. Features ■ State-of-the-art tech

High voltage NPN power transistor for standard definition CRT display

Description The MD2001FX is manufactured using Diffused Collector in Planar Technology adopting new and enhanced high voltage structure. The new MD product series show improved silicon efficiency bringing updated performance to the Horizontal Deflection stage. Features ■ State-of-the-art tech

High voltage NPN power transistor for standard definition CRT display

Description The MD2001FX is manufactured using Diffused Collector in Planar Technology adopting new and enhanced high voltage structure. The new MD product series show improved silicon efficiency bringing updated performance to the Horizontal Deflection stage. Features ■ State-of-the-art tech

High voltage NPN Power transistor for standard definition CRT display

Description The MD2009DFX is manufactured using Diffused Collector in Planar Technology adopting new and enhanced high voltage structure. The new MD product series show improved silicon efficiency bringing updated performance to the Horizontal Deflection stage. General features ■ State-of-the-a

High voltage NPN Power transistor for standard Definition CRT display

Description The MD2009DFX is manufactured using Diffused Collector in Planar Technology adopting new and enhanced high voltage structure. The new MD product series show improved silicon efficiency bringing updated performance to the Horizontal Deflection stage. General features ■ State-of-the-a

High voltage NPN Power transistor for standard Definition CRT display

Description The MD2009DFX is manufactured using Diffused Collector in Planar Technology adopting new and enhanced high voltage structure. The new MD product series show improved silicon efficiency bringing updated performance to the Horizontal Deflection stage. General features ■ State-of-the-a

1200V/200A 2 in one-package

General Description STARPOWER MOSFET Power Module provides very low RDS(on) as well as optimized intrinsic diode. It’s designed for the applications such SMPS and DC drives. Features  SiC power MOSFET  Low RDS(on)  Optimized intrinsic reverse diode  Chip sintering technology  Low ind

Miniature 4 pin SOP package

Features  Miniature 4 pin SOP package  Built in active discharge circuit for fast turn-off  Fast Turn-On  6V Gate Drive Voltage  High Input-to-Output Isolation (1.5kVRMS)  Long Life / High Reliability  RoHS / Pb-Free / REACH Compliant Applications  Isolated means to drive discre

ME/MD SERIES

FEATURES e® High current ratings(max 200A) ® Good shield effect by using metal case ® Epoxy molded for reliability(model MD series) ® Two hole lug type terminal connection(model ME series) APPLICATIONS @® Cellular base stations. ® Telecommunication switching networks and racks.

ME/MD SERIES

FEATURES e® High current ratings(max 200A) ® Good shield effect by using metal case ® Epoxy molded for reliability(model MD series) ® Two hole lug type terminal connection(model ME series) APPLICATIONS @® Cellular base stations. ® Telecommunication switching networks and racks.

ME/MD SERIES

FEATURES e® High current ratings(max 200A) ® Good shield effect by using metal case ® Epoxy molded for reliability(model MD series) ® Two hole lug type terminal connection(model ME series) APPLICATIONS @® Cellular base stations. ® Telecommunication switching networks and racks.

High voltage NPN power transistor for standard definition CRT display

Description The MD2103DFH is manufactured using Diffused Collector in Planar technology adopting new and enhanced high voltage structure. The new MD product series show improved silicon efficiency briging updated performance to the horizontal deflection stage. General features ■ State-of-the-a

High voltage NPN power transistor for standard definition CRT display

Description The MD2103DFP is manufactured using diffused collector in planar technology adopting new and enhanced high voltage structure. The new MD product series show improved silicon efficiency briging updated performance to the horizontal deflection stage. Features ■ State-of-the-art techno

High voltage NPN power transistor for standard definition CRT display

Description The MD2103DFX is manufactured using Diffused Collector in Planar technology adopting new and enhanced high voltage structure. The new MD product series show improved silicon efficiency briging updated performance to the horizontal deflection stage. General features ■ State-of-the-a

ME/MD SERIES

FEATURES e® High current ratings(max 200A) ® Good shield effect by using metal case ® Epoxy molded for reliability(model MD series) ® Two hole lug type terminal connection(model ME series) APPLICATIONS @® Cellular base stations. ® Telecommunication switching networks and racks.

ME/MD SERIES

FEATURES e® High current ratings(max 200A) ® Good shield effect by using metal case ® Epoxy molded for reliability(model MD series) ® Two hole lug type terminal connection(model ME series) APPLICATIONS @® Cellular base stations. ® Telecommunication switching networks and racks.

ME/MD SERIES

FEATURES e® High current ratings(max 200A) ® Good shield effect by using metal case ® Epoxy molded for reliability(model MD series) ® Two hole lug type terminal connection(model ME series) APPLICATIONS @® Cellular base stations. ® Telecommunication switching networks and racks.

DUAL AMPLIFIER TRANSISTOR NPN SILICON

DUAL AMPLIFIER TRANSISTOR NPN SILICON

DUAL AMPLIFIER TRANSISTOR

DUAL AMPLIFIER TRANSISTOR NPN SILICON

DUAL AMPLIFIER TRANSISTOR NPN SILICON

DUAL AMPLIFIER TRANSISTOR NPN SILICON

DUAL AMPLIFIER TRANSISTOR

DUAL AMPLIFIER TRANSISTOR NPN SILICON

DUAL AMPLIFIER TRANSISTOR NPN SILICON

DUAL AMPLIFIER TRANSISTOR NPN SILICON

DUAL AMPLIFIER TRANSISTOR

DUAL AMPLIFIER TRANSISTOR NPN SILICON

DUAL AMPLIFIER TRANSISTOR NPN SILICON

DUAL AMPLIFIER TRANSISTOR NPN SILICON

DUAL AMPLIFIER TRANSISTOR

DUAL AMPLIFIER TRANSISTOR NPN SILICON

DUAL AMPLIFIER TRANSISTOR NPN SILICON

DUAL AMPLIFIER TRANSISTOR NPN SILICON

DUAL AMPLIFIER TRANSISTOR

DUAL AMPLIFIER TRANSISTOR NPN SILICON

DUAL AMPLIFIER TRANSISTOR NPN SILICON

DUAL AMPLIFIER TRANSISTOR NPN SILICON

Dual Transistors

Dual Transistors TO-78 Case (Continued)

Dual Transistors

Dual Transistors TO-78 Case (Continued)

DUAL AMPLIFIER TRANSISTOR

DUAL AMPLIFIER TRANSISTOR NPN SILICON

DUAL AMPLIFIER TRANSISTOR NPN SILICON

DUAL AMPLIFIER TRANSISTOR NPN SILICON

DUAL AMPLIFIER TRANSISTOR

DUAL AMPLIFIER TRANSISTOR NPN SILICON

1200V/2.18mΩ 6 in one-package

General Description STARPOWER SiC MOSFET Power Module provides very low RDS(on) as well as high blocking voltage. It’s designed for the applications such as hybrid and electric vehicle. Features  SiC power MOSFET  High blocking voltage with low RDS(on)  Easy to parallel and simple to dri

1200V/2.20mΩ 6 in one-package

General Description STARPOWER SiC MOSFET Power Module provides very low RDS(on) as well as high blocking voltage. It’s designed for the applications such as hybrid and electric vehicle. Features  SiC power MOSFET  High blocking voltage with low RDS(on)  Easy to parallel and simple to dri

ME/MD SERIES

FEATURES e® High current ratings(max 200A) ® Good shield effect by using metal case ® Epoxy molded for reliability(model MD series) ® Two hole lug type terminal connection(model ME series) APPLICATIONS @® Cellular base stations. ® Telecommunication switching networks and racks.

ME/MD SERIES

FEATURES e® High current ratings(max 200A) ® Good shield effect by using metal case ® Epoxy molded for reliability(model MD series) ® Two hole lug type terminal connection(model ME series) APPLICATIONS @® Cellular base stations. ® Telecommunication switching networks and racks.

ME/MD SERIES

FEATURES e® High current ratings(max 200A) ® Good shield effect by using metal case ® Epoxy molded for reliability(model MD series) ® Two hole lug type terminal connection(model ME series) APPLICATIONS @® Cellular base stations. ® Telecommunication switching networks and racks.

High voltage NPN Power transistor for standard definition CRT display

Description The MD2310FX is manufactured using Diffused Collector in Planar Technology adopting new and enhanced high voltage structure. The new MD product series show improved silicon efficiency bringing updated performance to the Horizontal Deflection stage. Features ■ State-of-the-art techn

Dual Transistors

Dual Transistors TO-78 Case (Continued)

Dual Transistors

Dual Transistors TO-78 Case (Continued)

Dual Transistors

Dual Transistors TO-78 Case (Continued)

Dual Transistors

Dual Transistors TO-78 Case (Continued)

Dual Transistors

Dual Transistors TO-78 Case (Continued)

Dual Transistors

Dual Transistors TO-78 Case (Continued)

24 Amp Schottky Rectifier

24 Amp Schottky Rectifiers ● Glass Passivated Die ● Excellent Reliability ● VRRM 100 to 600 Volts

24 Amp Schottky Rectifier

24 Amp Schottky Rectifiers ● Glass Passivated Die ● Excellent Reliability ● VRRM 100 to 600 Volts

24 Amp Schottky Rectifier

24 Amp Schottky Rectifiers ● Glass Passivated Die ● Excellent Reliability ● VRRM 100 to 600 Volts

24 Amp Schottky Rectifier

24 Amp Schottky Rectifiers ● Glass Passivated Die ● Excellent Reliability ● VRRM 100 to 600 Volts

240 Amp GLASS PASSIVATED RECTIFIER DIODE MODULES 800 to 1800 Volts

Features • Lead Free Finish/RoHS Compliant(Note 1) (P Suffix Designates Compliant. See Ordering Information) • Heat Transfer Through Aluminum Oxide DBC Ceramic Isolated Metal Baseplate • Blocking voltage:800 to 1800V • Glass passivated chip Applications • Non-Controllable Rectifiers for

240 Amp GLASS PASSIVATED RECTIFIER DIODE MODULES 800 to 1800 Volts

Features • Lead Free Finish/RoHS Compliant(Note 1) (P Suffix Designates Compliant. See Ordering Information) • Heat Transfer Through Aluminum Oxide DBC Ceramic Isolated Metal Baseplate • Blocking voltage:800 to 1800V • Glass passivated chip Applications • Non-Controllable Rectifiers for

240 Amp GLASS PASSIVATED RECTIFIER DIODE MODULES 800 to 1800 Volts

Features • Lead Free Finish/RoHS Compliant(Note 1) (P Suffix Designates Compliant. See Ordering Information) • Heat Transfer Through Aluminum Oxide DBC Ceramic Isolated Metal Baseplate • Blocking voltage:800 to 1800V • Glass passivated chip Applications • Non-Controllable Rectifiers for

240 Amp GLASS PASSIVATED RECTIFIER DIODE MODULES 800 to 1800 Volts

Features • Lead Free Finish/RoHS Compliant(Note 1) (P Suffix Designates Compliant. See Ordering Information) • Heat Transfer Through Aluminum Oxide DBC Ceramic Isolated Metal Baseplate • Blocking voltage:800 to 1800V • Glass passivated chip Applications • Non-Controllable Rectifiers for

240 Amp GLASS PASSIVATED RECTIFIER DIODE MODULES 800 to 1800 Volts

Features • Lead Free Finish/RoHS Compliant(Note 1) (P Suffix Designates Compliant. See Ordering Information) • Heat Transfer Through Aluminum Oxide DBC Ceramic Isolated Metal Baseplate • Blocking voltage:800 to 1800V • Glass passivated chip Applications • Non-Controllable Rectifiers for

240 Amp GLASS PASSIVATED RECTIFIER DIODE MODULES 800 to 1800 Volts

Features • Lead Free Finish/RoHS Compliant(Note 1) (P Suffix Designates Compliant. See Ordering Information) • Heat Transfer Through Aluminum Oxide DBC Ceramic Isolated Metal Baseplate • Blocking voltage:800 to 1800V • Glass passivated chip Applications • Non-Controllable Rectifiers for

240 Amp GLASS PASSIVATED RECTIFIER DIODE MODULES 800 to 1800 Volts

Features • Lead Free Finish/RoHS Compliant(Note 1) (P Suffix Designates Compliant. See Ordering Information) • Heat Transfer Through Aluminum Oxide DBC Ceramic Isolated Metal Baseplate • Blocking voltage:800 to 1800V • Glass passivated chip Applications • Non-Controllable Rectifiers for

240 Amp GLASS PASSIVATED RECTIFIER DIODE MODULES 800 to 1800 Volts

Features • Lead Free Finish/RoHS Compliant(Note 1) (P Suffix Designates Compliant. See Ordering Information) • Heat Transfer Through Aluminum Oxide DBC Ceramic Isolated Metal Baseplate • Blocking voltage:800 to 1800V • Glass passivated chip Applications • Non-Controllable Rectifiers for

25A MOTOROLA TYPE PRESS-FIT DIODE

Features ● Diffused Junction ● Low Leakage ● Low Cost ● High Surge Current Capability ● Typical IR less than 5.0µA