位置：首页 > IC中文资料 > MCRD1035CTLT4G
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SWITCHMODE Schottky Power Rectifier Switch-mode Schottky Power Rectifier DPAK Power Surface Mount Package The MBRD1035CTL employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited fo | ONSEMI 安森美半导体 |   | ||
SWITCHMODE Schottky Power Rectifier Switch-mode Schottky Power Rectifier DPAK Power Surface Mount Package The MBRD1035CTL employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited fo | ONSEMI 安森美半导体 | | ||
SWITCHMODE Schottky Power Rectifier Switch-mode Schottky Power Rectifier DPAK Power Surface Mount Package The MBRD1035CTL employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited fo | ONSEMI 安森美半导体 | | ||
SWITCHMODE Schottky Power Rectifier 文件：117.22 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | ||
SWITCHMODE Schottky Power Rectifier 文件：117.22 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON |
22+ |
TO-252 |
15000 |
原装优质现货订货渠道商 |
|||
ONSEMI/安森美 |
2025 |
明嘉莱只做原装正品现货 |
2510000 |
TO-252-2(DPAK) |
|||
ON(安森美) |
24+ |
TO-252-2(DPAK) |
8023 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
ONSEMI/安森美 |
2025+ |
TO252 |
2143 |
原装进口价格优 请找坤融电子! |
|||
ON |
24+ |
T0-252 |
5000 |
原装现正品可看现货 |
|||
ONSEMI/安森美 |
25+ |
TO-252 |
32360 |
ONSEMI/安森美全新特价MBRD1035CTLT4G即刻询购立享优惠#长期有货 |
|||
ON |
23+ |
DPAK |
56000 |
||||
ON(安森美) |
24+ |
TO-252-2(DPAK) |
5632 |
只做原装现货假一罚十!价格最低!只卖原装现货 |
|||
ONSemi |
2111 |
TO-252-2(D |
27702 |
全新原装公司现货
|
|||
ON |
SOT-252 |
30216 |
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S |
MCRD1035CTLT4G规格书下载地址
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