Sensitive Gate Silicon Controlled Rectifiers(SCRs 4.0 AMPERES RMS 400 - 600 VOLTS)

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Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors

文件：60.75 Kbytes Page：5 Pages

SURFACE MOUNT SILICON CONTROLLED RECTIFIER 4 AMP, 400 THRU 600 VOLTS

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Silicon Controlled Rectifier

文件：142.02 Kbytes Page：1 Pages

SURFACE MOUNT SILICON CONTROLLED RECTIFIERS

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4A,600V Surface mount SCR

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：管件 描述：SCR 600V 4A DPAK 分立半导体产品 晶闸管 - SCR

THYRISTOR SCR 4A 600V DPAK

Silicon Controlled Rectifiers

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Sensitive Gate Silicon Controlled Rectifiers(SCRs 4.0 AMPERES RMS 400 - 600 VOLTS)

文件：68.06 Kbytes Page：6 Pages

Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors

文件：60.75 Kbytes Page：5 Pages

Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors

文件：60.75 Kbytes Page：5 Pages

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：盒 描述：SCR 600V 4A DPAK 分立半导体产品 晶闸管 - SCR

可控硅整流器

Very fast high-voltage soft-recovery rectifiers

DESCRIPTION Rugged glass package, using a high temperature alloyed construction. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. The package is designed to be used in an insulating medium such as resin, oil or SF6 gas. FEATU

PNP SILICON POWER (SWITCHING) TRANSISTOR

FEATURES * 2W POWER DISSIPATION * 6A Peak Pulse Current * Excellent HFE Characteristics up to 6Amps * Extremely Low Saturation Voltage E.g. 16mv Typ. * Extremely Low Equivalent On-resistance; RCE(sat) 96mΩ at 2.5A

丝印代码：718；SILICON POWER (SWITCHING) TRANSISTORS

FEATURES * 625mW POWER DISSIPATION * IC CONT 2.5A * IC Up To 10A Peak Pulse Current * Excellent hfe Characteristics Up To 10A (pulsed) * Extremely Low Saturation Voltage E.g. 10mV Typ. * Exhibits extremely low equivalent on-resistance; RCE(sat)

Silicon epitaxial planar type

Silicon epitaxial planar type For switching For wave detection ■ Features • Three isolated elements are contained in one package, allowing high-density mounting • Two MA3X704A (MA704A) is contained in one package (of a type in the same direction) • Low forward voltage VF , optimum for low vo

PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

FEATURES * 6A Peak pulse current * Excellent hFE characteristics up to 6A (pulsed) * low saturation voltage * IC Cont 2.5A APPLICATIONS * Power MOSFET gate driver in conjunction with complementary ZTX618