P-Channel Silicon MOSFET General-Purpose Switching Device Applications

Features • Ultrahigh-speed switching • 1.8V drive • Halogen free compliance • Protection diode in

P-Channel Power MOSFET 12V, ??A, 43m, Single MCPH6

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General-Purpose Switching Device Applications

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单 P 沟道功率 MOSFET，-12V，-5A，43mΩ

General-Purpose Switching Device Applications

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封装/外壳：6-SMD，扁平引线 包装：管件 描述：MOSFET P-CH 12V 5A MCPH6 分立半导体产品 晶体管 - FET，MOSFET - 单个

封装/外壳：6-SMD，扁平引线 包装：管件 描述：MOSFET P-CH 12V 5A MCPH6 分立半导体产品 晶体管 - FET，MOSFET - 单个

P-Channel Power MOSFET 12V, ??A, 43m, Single MCPH6

文件：543.77 Kbytes Page：7 Pages

P-Channel Power MOSFET

文件：543.77 Kbytes Page：7 Pages

P-Channel Power MOSFET 12V, ??A, 43m, Single MCPH6

文件：543.77 Kbytes Page：7 Pages

P-Channel Power MOSFET

文件：543.77 Kbytes Page：7 Pages

USB2.0 SD/MMC Single LUN Card Reader Controller

Description AU6336 is an USB2.0 high-speed transmission controller, which is designed as a bridge between USB and SD compatible flash card interface, such as SD, HS-SD, MMC, HS-MMC, RS-MMC, MMCmicro…etc. AU6336 can read digital contents stored on memory card designed to cover a wide area of app

0.5W Zener Diode

Features Sharp Reverse Characteristics Low Reverse Current Levels High Reliability Gold Back Metal High Reliability Tested Grades.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 28A, RDS(ON) = 40mΩ @VGS = 10V. RDS(ON) = 50mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 25A , RDS(ON) = 41mΩ @VGS = 10V. RDS(ON) = 55mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

N-Channel 60 V (D-S) MOSFET

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