Quad 2-Input NOR Gate

The MC74VHCT02A is an advanced high speed CMOS 2−input NOR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. Features • High Speed: tPD = 3.6 ns (Typ) at VCC = 5 V • Low Po

Quad 2?묲nput NOR Gate

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封装/外壳：14-SOIC（0.209"，5.30mm 宽） 包装：管件 描述：IC GATE NOR 4CH 2-INP SOEIAJ-14 集成电路（IC） 门和反相器

封装/外壳：14-SOIC（0.209"，5.30mm 宽） 包装：管件 描述：IC GATE NOR 4CH 2-INP SOEIAJ-14 集成电路（IC） 门和反相器

QUAD 2-INPUT NOR GATE

DESCRIPTION The 74VHCT02A is an advanced high-speed CMOS QUAD 2-INPUT NOR GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. The internal circuit is composed of 3 stages including buffer output, which provides high noise immunity and stable output. Powe

Quad 2-input NOR gate

1. General description The 74VHC02; 74VHCT02 are high-speed Si-gate CMOS devices and are pin compatible with Low-power Schottky TTL (LSTTL). They are specified in compliance with JEDEC standard No. 7-A. The 74VHC02; 74VHCT02 provide a quad 2-input NOR function. 2. Features and benefits • Bala

QUAD 2-INPUT NOR GATE

DESCRIPTION The 74VHCT02A is an advanced high-speed CMOS QUAD 2-INPUT NOR GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. The internal circuit is composed of 3 stages including buffer output, which provides high noise immunity and stable output. Powe

QUAD 2-INPUT NOR GATE

DESCRIPTION The 74VHCT02A is an advanced high-speed CMOS QUAD 2-INPUT NOR GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. The internal circuit is composed of 3 stages including buffer output, which provides high noise immunity and stable output. Powe

QUAD 2-INPUT NOR GATE

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