Quad 2-Input NAND Gate

The MC74VHCT00A is an advanced high speed CMOS 2–input NAND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The VHCT inputs are compatible with TTL levels. This device can b

Quad 2-Input NAND Gate

The MC74VHCT00A is an advanced high speed CMOS 2--input NAND gate fabricated with silicon gate CMOS technology. It achieves high speed operation while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer output which provides high noise immu

Quad 2-Input NAND Gate

The MC74VHCT00A is an advanced high speed CMOS 2--input NAND gate fabricated with silicon gate CMOS technology. It achieves high speed operation while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer output which provides high noise immu

Quad 2-Input NAND Gate

The MC74VHCT00A is an advanced high speed CMOS 2−input NAND gate fabricated with silicon gate CMOS technology. It achieves high speed operation while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer output which provides high noise i

Quad 2-Input NAND Gate

The MC74VHCT00A is an advanced high speed CMOS 2--input NAND gate fabricated with silicon gate CMOS technology. It achieves high speed operation while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer output which provides high noise immu

Quad 2-Input NAND Gate

The MC74VHCT00A is an advanced high speed CMOS 2–input NAND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The VHCT inputs are compatible with TTL levels. This device can b

Quad 2-Input NAND Gate

The MC74VHCT00A is an advanced high speed CMOS 2--input NAND gate fabricated with silicon gate CMOS technology. It achieves high speed operation while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer output which provides high noise immu

Quad 2-Input NAND Gate

The MC74VHCT00A is an advanced high speed CMOS 2--input NAND gate fabricated with silicon gate CMOS technology. It achieves high speed operation while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer output which provides high noise immu

Quad 2-Input NAND Gate

The MC74VHCT00A is an advanced high speed CMOS 2−input NAND gate fabricated with silicon gate CMOS technology. It achieves high speed operation while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer output which provides high noise i

Quad 2-Input NAND Gate

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封装/外壳：14-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC GATE NAND 4CH 2-INP 14SOIC 集成电路（IC） 门和反相器

Quad 2-Input NAND Gate

封装/外壳：14-TSSOP（0.173"，4.40mm 宽） 包装：管件 描述：IC GATE NAND 4CH 2-INP 14TSSOP 集成电路（IC） 门和反相器

Quad 2-Input NAND Gate

文件：95.45 Kbytes Page：8 Pages

QUAD 2-INPUT NAND GATE

DESCRIPTION The 74VHCT00A is an advanced high-speed CMOS QUAD 2-INPUT NAND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. The internal circuit is composed of 3 stages including buffer output, which provide high noise immunity and stable output. Power

QUAD 2-INPUT NAND GATE

DESCRIPTION The 74VHCT00A is an advanced high-speed CMOS QUAD 2-INPUT NAND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. The internal circuit is composed of 3 stages including buffer output, which provide high noise immunity and stable output. Power

Quad 2-Input NAND Gate

General Description The VHCT00A is an advanced high-speed CMOS 2-Input NAND Gate fabricated with silicon gate CMOS technology. It achieves the high-speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. The internal circuit is composed of 3 st

QUAD 2-INPUT NAND GATE

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Quad 2-Input NAND Gate

文件：226.58 Kbytes Page：8 Pages