Quad 2?묲nput NAND Gate

The MC74VHC00 is an advanced high speed CMOS 2−input NAND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffe

Quad 2?묲nput NAND Gate

The MC74VHC00 is an advanced high speed CMOS 2−input NAND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffe

封装/外壳：14-TSSOP（0.173"，4.40mm 宽） 包装：管件 描述：IC GATE NAND 4CH 2-INP 14TSSOP 集成电路（IC） 门和反相器

Quad 2-Input NAND Gate

文件：88.08 Kbytes Page：6 Pages

封装/外壳：14-TSSOP（0.173"，4.40mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC GATE NAND 4CH 2-INP 14TSSOP 集成电路（IC） 门和反相器

Quad 2-Input NAND Gate

General Description The VHC00 is an advanced high-speed CMOS 2-Input NAND Gate fabricated with silicon gate CMOS technology. It achieves the high-speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. The internal circuit is composed of 3 stag

Quad 2-Input NAND Gate

The MC74VHC00 is an advanced high speed CMOS 2−input NAND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffe

QUAD 2-INPUT NAND GATE

DESCRIPTION The 74VHC00 is an advanced high-speed CMOS QUAD 2-INPUT NAND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. The internal circuit is composed of 3 stages including buffer output, which provides high noise immunity and stable output. Power d

Quad 2?묲nput NAND Gate

The MC74VHC00 is an advanced high speed CMOS 2−input NAND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffe

QUAD 2-INPUT NAND GATE

文件：231.3 Kbytes Page：11 Pages