Hex Gate

The MC14572UB hex functional gate is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. These complementary MOS logic gates find primary use where low power dissipation and/or high noise immunity is desired. The chip contains four inverters, one

Hex Gate

文件：94.78 Kbytes Page：6 Pages

Hex Gate

文件：97.31 Kbytes Page：5 Pages

六路门极；4 个逆变器；1 个 NOR；1 个 NAND

Hex Gate

Hex Gate

The MC14572UB hex functional gate is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. These complementary MOS logic gates find primary use where low power dissipation and/or high noise immunity is desired. The chip contains four inverters, one

Hex Gate

The MC14572UB hex functional gate is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. These complementary MOS logic gates find primary use where low power dissipation and/or high noise immunity is desired. The chip contains four inverters, one

Hex Gate

The MC14572UB hex functional gate is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. These complementary MOS logic gates find primary use where low power dissipation and/or high noise immunity is desired. The chip contains four inverters, one

Hex Gate

The MC14572UB hex functional gate is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. These complementary MOS logic gates find primary use where low power dissipation and/or high noise immunity is desired. The chip contains four inverters, one

Hex Gate

The MC14572UB hex functional gate is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. These complementary MOS logic gates find primary use where low power dissipation and/or high noise immunity is desired. The chip contains four inverters, one

Hex Gate

文件：94.78 Kbytes Page：6 Pages

Hex Gate

文件：115.33 Kbytes Page：6 Pages

Hex Gate

文件：97.31 Kbytes Page：5 Pages

Hex Gate

文件：94.78 Kbytes Page：6 Pages

Hex Gate

文件：94.78 Kbytes Page：6 Pages

Hex Gate

文件：115.33 Kbytes Page：6 Pages

封装/外壳：16-SOIC（0.154"，3.90mm 宽） 包装：管件 描述：IC GATE HEX NAND/NOR/INV 16-SOIC 集成电路（IC） 门和反相器 - 多功能，可配置

Hex Gate

文件：94.78 Kbytes Page：6 Pages

Hex Gate

文件：94.78 Kbytes Page：6 Pages

封装/外壳：16-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC GATE HEX NAND/NOR/INV 16-SOIC 集成电路（IC） 门和反相器 - 多功能，可配置

Hex Gate

文件：115.33 Kbytes Page：6 Pages

Hex Gate

文件：97.31 Kbytes Page：5 Pages

Hex Gate

文件：94.78 Kbytes Page：6 Pages

Hex Gate

文件：97.31 Kbytes Page：5 Pages

Hex Gate

文件：115.33 Kbytes Page：6 Pages

Hex Gate

文件：94.78 Kbytes Page：6 Pages

Hex Gate

文件：94.78 Kbytes Page：6 Pages

Hex Gate

Hex Gate The HD14572UB hex functional gate finds primary use where low power dissipation and/or high immunity is desired. The chip contains four inverters, one NOR gate and one NAND gate.

Hex Gate

Hex Gate The HD14572UB hex functional gate finds primary use where low power dissipation and/or high immunity is desired. The chip contains four inverters, one NOR gate and one NAND gate.

Adjustable Overvoltage and Overcurrent Protectors with High Accuracy

General Description The MAX14571/MAX14572/MAX14573 adjustable over voltage- and overcurrent-protection devices are ideal to protect systems against positive and negative input voltage faults up to Q40V and feature low 100mI (typ) RON FETs. The overvoltage-protector (OVP) feature protects vol

6V to 36V Operating Voltage Range

文件：605.28 Kbytes Page：11 Pages

Adjustable Overvoltage and Overcurrent Protectors with High Accuracy

文件：1.66412 Mbytes Page：14 Pages