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MC14025价格
参考价格：￥0.7713
型号：MC14025BDG 品牌：ON 备注：这里有MC14025多少钱，2025年最近7天走势，今日出价，今日竞价，MC14025批发/采购报价，MC14025行情走势销售排行榜，MC14025报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V | ONSEMI 安森美半导体 |   | ||
B-Suffix Series CMOS Gates TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered | Motorola 摩托罗拉 | | ||
B-Suffix Series CMOS Gates TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered | Motorola 摩托罗拉 | | ||
B-Suffix Series CMOS Gates TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered | Motorola 摩托罗拉 | | ||
B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V | ONSEMI 安森美半导体 | | ||
B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V | ONSEMI 安森美半导体 | | ||
B-Suffix Series CMOS Gates TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered | Motorola 摩托罗拉 | | ||
B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V | ONSEMI 安森美半导体 | | ||
B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V | ONSEMI 安森美半导体 | | ||
B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V | ONSEMI 安森美半导体 | | ||
B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V | ONSEMI 安森美半导体 | | ||
B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V | ONSEMI 安森美半导体 | | ||
B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V | ONSEMI 安森美半导体 | | ||
三路 3 输入 NOR 门极 | ONSEMI 安森美半导体 | | ||
B?뭆uffix Series CMOS Gates 文件：195.05 Kbytes Page：14 Pages | ONSEMI 安森美半导体 | | ||
B-SUFFIX SERIES CMOS GATES 文件：134.49 Kbytes Page：12 Pages | ONSEMI 安森美半导体 | | ||
B-SUFFIX SERIES CMOS GATES 文件：134.49 Kbytes Page：12 Pages | ONSEMI 安森美半导体 | | ||
B-SUFFIX SERIES CMOS GATES 文件：134.49 Kbytes Page：12 Pages | ONSEMI 安森美半导体 | | ||
封装/外壳：14-DIP（0.300"，7.62mm） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC GATE NOR 3CH 3-INP 14DIP 集成电路（IC） 门和反相器 | ONSEMI 安森美半导体 | | ||
B-SUFFIX SERIES CMOS GATES 文件：134.49 Kbytes Page：12 Pages | ONSEMI 安森美半导体 | | ||
封装/外壳：14-SOIC（0.154"，3.90mm 宽） 包装：管件 描述：IC GATE NOR 3CH 3-INP 14SOIC 集成电路（IC） 门和反相器 | ONSEMI 安森美半导体 | | ||
B-Suffix Series CMOS Gates 文件：135.47 Kbytes Page：11 Pages | ONSEMI 安森美半导体 | | ||
B-SUFFIX SERIES CMOS GATES 文件：134.49 Kbytes Page：12 Pages | ONSEMI 安森美半导体 | | ||
B-SUFFIX SERIES CMOS GATES 文件：134.49 Kbytes Page：12 Pages | ONSEMI 安森美半导体 | | ||
B-Suffix Series CMOS Gates 文件：135.47 Kbytes Page：11 Pages | ONSEMI 安森美半导体 | | ||
B-SUFFIX SERIES CMOS GATES 文件：134.49 Kbytes Page：12 Pages | ONSEMI 安森美半导体 | | ||
Robust, instant connections for harsh environments 文件：2.64705 Mbytes Page：7 Pages | BULGIN | | ||
6000 Series Buccaneer 文件：408.31 Kbytes Page：8 Pages | BULGINLIMITED | | ||
400 Series Buccaneer 文件：348.11 Kbytes Page：6 Pages | BULGINLIMITED | | ||
8.0 TO 14.0 GHz, Half Watt COUGARPAK AMPLIFIER 文件：159.95 Kbytes Page：2 Pages | TELEDYNE 华特力科 | | ||
E-Frame Brkr 25A, 1P, 277V, 18/25kA, Bolt-on Mnt 文件：104.05 Kbytes Page：2 Pages | SCHNEIDER 施耐德 | |
| 替换型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
CMOS QUAD 2-LINE-TO-1-LINE DATA SELECTOR/MULTIPLEXER | TI 德州仪器 | TI | | |
Buffered Triple 3-Input NAND,NOR Gate | NSC 国半 | NSC | | |
CMOS Quad 2 Line to 1 Line Data Selector/Multiplexer | Intersil | Intersil | | |
Buffered Triple 3-Input NAND,NOR Gate | NSC 国半 | NSC | | |
Buffered Triple 3-Input NAND,NOR Gate | NSC 国半 | NSC | | |
CMOS NOR Gates | TI 德州仪器 | TI | | |
CMOS NOR Gates | TI 德州仪器 | TI | | |
Buffered Triple 3-Input NAND,NOR Gate | NSC 国半 | NSC | | |
NOR GATE | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | | |
Triple 3-input NOR Gate | HitachiHitachi Semiconductor 日立日立公司 | Hitachi | | |
Triple 3-input NOR gate | Philips 飞利浦 | Philips | | |
Triple 3-input NOR gate | Philips 飞利浦 | Philips | | |
COMPLEMENTARY METAL OXIDE SILICON | NTE | NTE | | |
INPUT NOR GATE | RANDE | RANDE | |
MC14025产品属性
- 类型
描述
- 型号
MC14025
- 制造商
Motorola Inc
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi(安森美) |
24+ |
SOP14 |
2669 |
只做原装,提供一站式配单服务,代工代料。BOM配单 |
|||
ON |
2016+ |
DIP |
3000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
ONSEMI/安森美 |
23+ |
SOP-14 |
4500 |
只做原装正品现货或订货假一赔十! |
|||
ONSEMI/安森美 |
25+ |
DIP |
12360 |
ONSEMI/安森美原装特价MC14025BCP即刻询购立享优惠#长期有货 |
|||
ON |
20+ |
SOP-5.2 |
2960 |
诚信交易大量库存现货 |
|||
ON/安森美 |
23+ |
25850 |
新到现货,只有原装 |
||||
ON(安森美) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
Mot |
25+ |
440 |
公司优势库存 热卖中!! |
||||
MOT |
22+ |
SOP-14 |
5000 |
只做原装鄙视假货15118075546 |
|||
ON(安森美) |
23+ |
18897 |
公司只做原装正品,假一赔十 |
MC14025规格书下载地址
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MC14025数据表相关新闻
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2013-3-17
DdatasheetPDF页码索引
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