MC10EL11DTG价格

参考价格:¥15.3534

型号:MC10EL11DTG 品牌:ON 备注:这里有MC10EL11DTG多少钱,2026年最近7天走势,今日出价,今日竞价,MC10EL11DTG批发/采购报价,MC10EL11DTG行情走势销售排行榜,MC10EL11DTG报价。
型号 功能描述 生产厂家 企业 LOGO 操作
MC10EL11DTG

5.0 V ECL 1:2 Differential Fanout Buffer

文件:150.83 Kbytes Page:9 Pages

ONSEMI

安森美半导体

MC10EL11DTG

5.0V ECL 1:2 Differential Fanout Buffer

文件:166.51 Kbytes Page:8 Pages

ONSEMI

安森美半导体

MC10EL11DTG

封装/外壳:8-TSSOP,8-MSOP(0.118",3.00mm 宽) 包装:管件 描述:IC CLK BUFFER 1:2 1.5GHZ 8TSSOP 集成电路(IC) 时钟缓冲器,驱动器

ONSEMI

安森美半导体

5V/3.3V 1:2 DIFFERENTIAL FANOUT BUFFER

DESCRIPTION The SY10/100EL11V are 1:2 differential fanout gates. These devices are functionally similar to the E111A/L devices, with higher performance capabilities. Having within-device skews and output transition times significantly improved over the E111A/L, the EL11V is ideally suited for tho

MICREL

麦瑞半导体

5V/3.3V 1:2 DIFFERENTIAL FANOUT BUFFER

DESCRIPTION The SY10/100EL11V are 1:2 differential fanout gates. These devices are functionally similar to the E111A/L devices, with higher performance capabilities. Having within-device skews and output transition times significantly improved over the E111A/L, the EL11V is ideally suited for tho

MICREL

麦瑞半导体

5V/3.3V 1:2 DIFFERENTIAL FANOUT BUFFER

DESCRIPTION The SY10/100EL11V are 1:2 differential fanout gates. These devices are functionally similar to the E111A/L devices, with higher performance capabilities. Having within-device skews and output transition times significantly improved over the E111A/L, the EL11V is ideally suited for tho

MICREL

麦瑞半导体

5V/3.3V 1:2 DIFFERENTIAL FANOUT BUFFER

DESCRIPTION The SY10/100EL11V are 1:2 differential fanout gates. These devices are functionally similar to the E111A/L devices, with higher performance capabilities. Having within-device skews and output transition times significantly improved over the E111A/L, the EL11V is ideally suited for tho

MICREL

麦瑞半导体

5V/3.3V 1:2 DIFFERENTIAL FANOUT BUFFER

DESCRIPTION The SY10/100EL11V are 1:2 differential fanout gates. These devices are functionally similar to the E111A/L devices, with higher performance capabilities. Having within-device skews and output transition times significantly improved over the E111A/L, the EL11V is ideally suited for tho

MICREL

麦瑞半导体

MC10EL11DTG产品属性

  • 类型

    描述

  • 型号

    MC10EL11DTG

  • 功能描述

    时钟缓冲器 5V ECL

  • 1

    2 Diff Fanout Buffer

  • RoHS

  • 制造商

    Texas Instruments

  • 输出端数量

    5

  • 最大输入频率

    40 MHz

  • 电源电压-最大

    3.45 V

  • 电源电压-最小

    2.375 V

  • 最大工作温度

    + 85 C

  • 最小工作温度

    - 40 C

  • 封装/箱体

    LLP-24

  • 封装

    Reel

更新时间:2026-3-16 12:02:00
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onsemi
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onsemi
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公司现货,提供拆样技术支持
ON/安森美
24+
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原装正品 有挂就有货

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