MBT35200MT1G价格

参考价格:¥0.8732

型号:MBT35200MT1G 品牌:ONSemi 备注:这里有MBT35200MT1G多少钱,2026年最近7天走势,今日出价,今日竞价,MBT35200MT1G批发/采购报价,MBT35200MT1G行情走势销售排行榜,MBT35200MT1G报价。
型号 功能描述 生产厂家 企业 LOGO 操作
MBT35200MT1G

High Current Surface Mount PNP Silicon

High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements • These Devices are Pb−Free, Haloge

ONSEMI

安森美半导体

MBT35200MT1G

High Current Surface Mount PNP Silicon Switching Transistor

文件:115.4 Kbytes Page:5 Pages

ONSEMI

安森美半导体

MBT35200MT1G

封装/外壳:SOT-23-6 细型,TSOT-23-6 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS PNP 35V 2A 6TSOP 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

MBT35200MT1G

双极晶体管 - 双极结型晶体管(BJT) Low Saturation

ONSEMI

安森美半导体

MBT35200MT1G

High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications

文件:64.66 Kbytes Page:6 Pages

ONSEMI

安森美半导体

High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications

High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements • These Devices are Pb−Free, Haloge

ONSEMI

安森美半导体

High Current Surface Mount PNP Silicon

High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements • These Devices are Pb−Free, Haloge

ONSEMI

安森美半导体

High Current Surface Mount PNP Silicon Switching Transistor

文件:115.4 Kbytes Page:5 Pages

ONSEMI

安森美半导体

High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications

文件:64.66 Kbytes Page:6 Pages

ONSEMI

安森美半导体

MBT35200MT1G产品属性

  • 类型

    描述

  • 型号

    MBT35200MT1G

  • 功能描述

    两极晶体管 - BJT Low Saturation

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    PNP 集电极—基极电压

  • VCBO

    集电极—发射极最大电压

  • VCEO

    - 40 V 发射极 - 基极电压

  • VEBO

    - 6 V

  • 增益带宽产品fT

    直流集电极/Base Gain hfe

  • Min

    100 A

  • 安装风格

    SMD/SMT

  • 封装/箱体

    PowerFLAT 2 x 2

更新时间:2026-3-2 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON/安森美
23+
SOT23-6
100586
全新原厂原装正品现货,可提供技术支持、样品免费!
ON
24+
SOT163
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
ON
20+
TSOP-6
2960
诚信交易大量库存现货
ON
24+/25+
1098
原装正品现货库存价优
ON/安森美
25+
SOT23-6
36794
ON/安森美全新特价MBT35200MT1G即刻询购立享优惠#长期有货
ON
24+
SOT23-6
7850
只做原装正品现货或订货假一赔十!
ON
23+
2100
专做原装正品,假一罚百!
ON
2016+
SOT23-6
4586
只做原装,假一罚十,公司可开17%增值税发票!
ON
25+
SOT163
30000
代理全新原装现货,价格优势
ON(安森美)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持

MBT35200MT1G数据表相关新闻