HIGH POWER-SCHOTTKY RECTIFIERS

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封装/外壳：三塔 包装：散装 描述：DIODE MODULE 60V 300A 3TOWER 分立半导体产品 二极管 - 整流器 - 阵列

封装/外壳：三塔 包装：散装 描述：DIODE MODULE 60V 300A 3TOWER 分立半导体产品 二极管 - 整流器 - 阵列

HIGH POWER-SCHOTTKY RECTIFIERS

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Silicon Power Schottky Diode

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Isolation Voltage 2500 Vrms 1ch Gate Driver Providing Galvanic Isolation

General Description The BM60060FV-C is a gate driver with an isolation voltage of 2500 Vrms. It has an I/O delay time of 210 ns, minimum input pulse width of 90 ns, and incorporates the fault signal output function, under voltage lockout (UVLO) function, short circuit protection (SCP, built-

60 W, 6.0 GHz, GaN HEMT Die

Description Wolfspeed’s CGH60060D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs o

70 MHz Bandpass SAW Filter

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60 W, 6.0 GHz, GaN HEMT Die

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SCHOTTKY POWERMOD

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