Schottky Diodes

FEATURES High frequency operation Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability Solder dip 275 °C max. 7 s, per JESD 22-B106

功率肖特基二极管(IF ≧ 1A)

肖特基二极管

SWITCHMODE Schottky Power Rectifier

The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low–voltage, high–frequency s

Fast Recovery Rectifier

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20.0 Ampere Surface Mount Dual Common Cathode Schottky Barrier Rectifiers

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Noninductive Planar Low Cost, 20 Watt TO 220 Package Thick Film Resistor

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Noninductive Planar Low Cost, 20 Watt TO 220 Package Thick Film Resistor

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