位置:首页 > IC中文资料第6337页 > MBRF2035
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MBRF2035 | Isolated 20.0 AMPS. Schottky Barrier Rectifiers Features Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency High current capability, low forward voltage drop High surge capability For use in low voltage, high frequency | TSC 台湾半导体 | ||
MBRF2035 | 20.0 AMPS. Isolated Schottky Barrier Rectifiers 文件:149.75 Kbytes Page:2 Pages | TSC 台湾半导体 | ||
MBRF2035 | Isolated Schottky Barrier Rectifiers 文件:218.36 Kbytes Page:4 Pages | TSC 台湾半导体 | ||
MBRF2035 | 20.0 AMPS. Isolated Schottky Barrier Rectifiers 文件:248.25 Kbytes Page:3 Pages | TSC 台湾半导体 | ||
MBRF2035 | Isolated 20.0AMP. Schottky Barrier Rectifiers 文件:214.11 Kbytes Page:2 Pages | LUGUANG 鲁光电子 | ||
MBRF2035 | 20A, 35V, Schottky Rectifier | TSC 台湾半导体 | ||
MBRF2035CT SCHOTTKY RECTIFIER Features 150C TJ operation Center tap configuration Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Fre | SMCDIODE 桑德斯微电子 | |||
SCHOTTKY BARRIER RECTIFIERS FEATURES ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard ring for over voltage protection. | DSK | |||
Isolated plastic package has Underwriters Laboratory Flammability Classification 94V-0 Features · Low Power Loss · High Efficiency · Low Forward Voltage , High Current Capability · High surge capacity · Case : ITO-220AB Full Molded Plastic Package | KERSEMI | |||
Isolated plastic package has Underwriters Laboratory Flammability Classification 94V-0 FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO- | KERSEMI | |||
SCHOTTKY ISOLATED PLASTIC RECTIFIER FEATURES ♦ Isolated plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ Dual rectifier construction, positive center tap ♦ Metal silicon junction,majority carrier conduction ♦ Low power loss, high efficiency ♦ High current capability, low forward voltage drop ♦ Hi | GE | |||
TO-220F Plastic-Encapsulate Diodes SCHOTTKY BARRIER RECTIFIER FEATURES ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss,High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters,Free Wheeling | TGS | |||
Schottky Barrier Rectifiers VOLTAGE RANGE: 30 - 60 V CURRENT: 20 A Features Metal silicon junction, majority carrier conduction. High current capacity, low forward voltage drop. Guard ring for over voltage protection. High surge capacity. For use in low voltage, high frequency inverters, free wheeling, | LUGUANG 鲁光电子 | |||
Isolated 20.0 AMPS. Schottky Barrier Rectifiers Features ◇ UL Recognized File # E-326243 ◇ Low power loss, high efficiency ◇ High current capability, low forward voltage drop ◇ Guard-ring for overvoltage protection ◇ Plastic material used carriers Underwriters Laboratory Classification 94V-0 ◇ Green compound with suffix G on packing code | TSC 台湾半导体 | |||
Dual Common-Cathode Schottky Rectifier FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO- | VISHAYVishay Siliconix 威世威世科技公司 | |||
20.0 AMPS. Isolated Schottky Barrier Rectifiers 文件:149.75 Kbytes Page:2 Pages | TSC 台湾半导体 | |||
20.0 AMPS. Isolated Schottky Barrier Rectifiers 文件:248.25 Kbytes Page:3 Pages | TSC 台湾半导体 | |||
Isolated Schottky Barrier Rectifiers 文件:218.36 Kbytes Page:4 Pages | TSC 台湾半导体 | |||
Full Plastic Dual Schottky Barrier Power Rectifiers 文件:146.59 Kbytes Page:2 Pages | MOSPEC 统懋 | |||
Dual Schottky Barrier Rectifiers 文件:257.38 Kbytes Page:3 Pages | GOOD-ARK 固锝电子 | |||
Isolation 20.0 AMPS. Schottky Barrier Rectifiers 文件:122.87 Kbytes Page:2 Pages | TSC 台湾半导体 | |||
20.0 AMPS. Isolated Schottky Barrier Rectifiers 文件:183.36 Kbytes Page:2 Pages | TSC 台湾半导体 | |||
20A, 35V, Schottky Rectifier | TSC 台湾半导体 | |||
Plastic material used carries Underwriters Laboratory Classifications 94V-0 文件:921.52 Kbytes Page:2 Pages | KERSEMI | |||
High frequency operation 文件:184.57 Kbytes Page:5 Pages | SMC 桑德斯微电子 | |||
Dual Common Cathode Schottky Rectifier 文件:231.87 Kbytes Page:4 Pages | TSC 台湾半导体 | |||
封装/外壳:TO-220-3 全封装,隔离接片 包装:管件 描述:DIODE ARRAY SCHOTT 35V ITO220AB 分立半导体产品 二极管 - 整流器 - 阵列 | TSC 台湾半导体 | |||
Isolation 20.0 AMPS. Schottky Barrier Rectifiers 文件:122.87 Kbytes Page:2 Pages | TSC 台湾半导体 | |||
20.0 AMPS. Isolated Schottky Barrier Rectifiers 文件:183.36 Kbytes Page:2 Pages | TSC 台湾半导体 | |||
Dual Common Cathode Schottky Rectifier 文件:231.87 Kbytes Page:4 Pages | TSC 台湾半导体 | |||
封装/外壳:TO-220-3 全封装,隔离接片 包装:管件 描述:DIODE ARRAY SCHOTTKY 35V ITO220 分立半导体产品 二极管 - 整流器 - 阵列 | ETC 知名厂家 | ETC | ||
SWITCHMODE?? Power Rectifiers SWITCHMODE™ Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temperature • Guaranteed Reverse Avalanche • E | MOTOROLA 摩托罗拉 | |||
SCRs General Description The Teccor line of thyristor SCR semi-conductors are half-wave, unidirectional, gate-controlled rectifiers which complement Teccors line of sensitive SCRs. Teccor offers devices with ratings of 1 A to 70 A and 200 V to 1000 V, with gate sensitivities from 10 mA to 50 mA. If ga | TECCOR | |||
SCHOTTKY BARRIER RECTIFIERS(20A,30-45V) SWITCHMODE POWER RECTIFIERS D PAK SURFACE MOUNT POWER PACKAGE The D PAK Power rectifier employs the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art devices have the following features: * Low Forward Voltage * Low Switching noise * High Surge Capacity * Guara | MOSPEC 统懋 | |||
STEREO MODULATOR 文件:252.12 Kbytes Page:6 Pages | NJRC 日本无线 | |||
STEREO MODULATOR 文件:252.12 Kbytes Page:6 Pages | NJRC 日本无线 |
MBRF2035产品属性
- 类型
描述
- 型号
MBRF2035
- 制造商
TSC
- 制造商全称
Taiwan Semiconductor Company, Ltd
- 功能描述
Isolated 20.0 AMPS. Schottky Barrier Rectifiers
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
GS |
25+ |
TO-220F |
10000 |
专做原装正品,假一罚百! |
|||
ON(安森美) |
2511 |
9550 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
||||
ON |
23+ |
SOD123 |
3000 |
原装正品假一罚百!可开增票! |
|||
VISHAY/威世 |
23+ |
ITO220AB |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
ON |
15+ |
SOD123 |
12000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
TSC |
2447 |
TO-220F |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
中性 |
23+ |
TO220F-3 |
50000 |
全新原装正品现货,支持订货 |
|||
VISHAY |
ROHS |
56520 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
MCC/美微科 |
25+ |
SOD123 |
98192 |
价格从优 欢迎来电咨询 |
|||
ON |
25+ |
N/A |
90000 |
一级代理商进口原装现货、假一罚十价格合理 |
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MBRF2035规格书下载地址
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