位置:首页 > IC中文资料第6337页 > MBRF2035

型号 功能描述 生产厂家 企业 LOGO 操作
MBRF2035

Isolated 20.0 AMPS. Schottky Barrier Rectifiers

Features Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency High current capability, low forward voltage drop High surge capability For use in low voltage, high frequency

TSC

台湾半导体

MBRF2035

20.0 AMPS. Isolated Schottky Barrier Rectifiers

文件:149.75 Kbytes Page:2 Pages

TSC

台湾半导体

MBRF2035

Isolated Schottky Barrier Rectifiers

文件:218.36 Kbytes Page:4 Pages

TSC

台湾半导体

MBRF2035

20.0 AMPS. Isolated Schottky Barrier Rectifiers

文件:248.25 Kbytes Page:3 Pages

TSC

台湾半导体

MBRF2035

Isolated 20.0AMP. Schottky Barrier Rectifiers

文件:214.11 Kbytes Page:2 Pages

LUGUANG

鲁光电子

MBRF2035

20A, 35V, Schottky Rectifier

TSC

台湾半导体

MBRF2035CT SCHOTTKY RECTIFIER

Features 150C TJ operation Center tap configuration Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Fre

SMCDIODE

桑德斯微电子

SCHOTTKY BARRIER RECTIFIERS

FEATURES ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard ring for over voltage protection.

DSK

Isolated plastic package has Underwriters Laboratory Flammability Classification 94V-0

Features · Low Power Loss · High Efficiency · Low Forward Voltage , High Current Capability · High surge capacity · Case : ITO-220AB Full Molded Plastic Package

KERSEMI

Isolated plastic package has Underwriters Laboratory Flammability Classification 94V-0

FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-

KERSEMI

SCHOTTKY ISOLATED PLASTIC RECTIFIER

FEATURES ♦ Isolated plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ Dual rectifier construction, positive center tap ♦ Metal silicon junction,majority carrier conduction ♦ Low power loss, high efficiency ♦ High current capability, low forward voltage drop ♦ Hi

GE

TO-220F Plastic-Encapsulate Diodes

SCHOTTKY BARRIER RECTIFIER FEATURES ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss,High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters,Free Wheeling

TGS

Schottky Barrier Rectifiers

VOLTAGE RANGE: 30 - 60 V CURRENT: 20 A Features Metal silicon junction, majority carrier conduction. High current capacity, low forward voltage drop. Guard ring for over voltage protection. High surge capacity. For use in low voltage, high frequency inverters, free wheeling,

LUGUANG

鲁光电子

Isolated 20.0 AMPS. Schottky Barrier Rectifiers

Features ◇ UL Recognized File # E-326243 ◇ Low power loss, high efficiency ◇ High current capability, low forward voltage drop ◇ Guard-ring for overvoltage protection ◇ Plastic material used carriers Underwriters Laboratory Classification 94V-0 ◇ Green compound with suffix G on packing code

TSC

台湾半导体

Dual Common-Cathode Schottky Rectifier

FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-

VISHAYVishay Siliconix

威世威世科技公司

20.0 AMPS. Isolated Schottky Barrier Rectifiers

文件:149.75 Kbytes Page:2 Pages

TSC

台湾半导体

20.0 AMPS. Isolated Schottky Barrier Rectifiers

文件:248.25 Kbytes Page:3 Pages

TSC

台湾半导体

Isolated Schottky Barrier Rectifiers

文件:218.36 Kbytes Page:4 Pages

TSC

台湾半导体

Full Plastic Dual Schottky Barrier Power Rectifiers

文件:146.59 Kbytes Page:2 Pages

MOSPEC

统懋

Dual Schottky Barrier Rectifiers

文件:257.38 Kbytes Page:3 Pages

GOOD-ARK

固锝电子

Isolation 20.0 AMPS. Schottky Barrier Rectifiers

文件:122.87 Kbytes Page:2 Pages

TSC

台湾半导体

20.0 AMPS. Isolated Schottky Barrier Rectifiers

文件:183.36 Kbytes Page:2 Pages

TSC

台湾半导体

20A, 35V, Schottky Rectifier

TSC

台湾半导体

Plastic material used carries Underwriters Laboratory Classifications 94V-0

文件:921.52 Kbytes Page:2 Pages

KERSEMI

High frequency operation

文件:184.57 Kbytes Page:5 Pages

SMC

桑德斯微电子

Dual Common Cathode Schottky Rectifier

文件:231.87 Kbytes Page:4 Pages

TSC

台湾半导体

封装/外壳:TO-220-3 全封装,隔离接片 包装:管件 描述:DIODE ARRAY SCHOTT 35V ITO220AB 分立半导体产品 二极管 - 整流器 - 阵列

TSC

台湾半导体

Isolation 20.0 AMPS. Schottky Barrier Rectifiers

文件:122.87 Kbytes Page:2 Pages

TSC

台湾半导体

20.0 AMPS. Isolated Schottky Barrier Rectifiers

文件:183.36 Kbytes Page:2 Pages

TSC

台湾半导体

Dual Common Cathode Schottky Rectifier

文件:231.87 Kbytes Page:4 Pages

TSC

台湾半导体

封装/外壳:TO-220-3 全封装,隔离接片 包装:管件 描述:DIODE ARRAY SCHOTTKY 35V ITO220 分立半导体产品 二极管 - 整流器 - 阵列

ETC

知名厂家

SWITCHMODE?? Power Rectifiers

SWITCHMODE™ Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temperature • Guaranteed Reverse Avalanche • E

MOTOROLA

摩托罗拉

SCRs

General Description The Teccor line of thyristor SCR semi-conductors are half-wave, unidirectional, gate-controlled rectifiers which complement Teccors line of sensitive SCRs. Teccor offers devices with ratings of 1 A to 70 A and 200 V to 1000 V, with gate sensitivities from 10 mA to 50 mA. If ga

TECCOR

SCHOTTKY BARRIER RECTIFIERS(20A,30-45V)

SWITCHMODE POWER RECTIFIERS D PAK SURFACE MOUNT POWER PACKAGE The D PAK Power rectifier employs the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art devices have the following features: * Low Forward Voltage * Low Switching noise * High Surge Capacity * Guara

MOSPEC

统懋

STEREO MODULATOR

文件:252.12 Kbytes Page:6 Pages

NJRC

日本无线

STEREO MODULATOR

文件:252.12 Kbytes Page:6 Pages

NJRC

日本无线

MBRF2035产品属性

  • 类型

    描述

  • 型号

    MBRF2035

  • 制造商

    TSC

  • 制造商全称

    Taiwan Semiconductor Company, Ltd

  • 功能描述

    Isolated 20.0 AMPS. Schottky Barrier Rectifiers

更新时间:2026-8-3 11:34:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
GS
25+
TO-220F
10000
专做原装正品,假一罚百!
ON(安森美)
2511
9550
电子元器件采购降本30%!原厂直采,砍掉中间差价
ON
23+
SOD123
3000
原装正品假一罚百!可开增票!
VISHAY/威世
23+
ITO220AB
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
ON
15+
SOD123
12000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
TSC
2447
TO-220F
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
中性
23+
TO220F-3
50000
全新原装正品现货,支持订货
VISHAY
ROHS
56520
一级代理 原装正品假一罚十价格优势长期供货
MCC/美微科
25+
SOD123
98192
价格从优 欢迎来电咨询
ON
25+
N/A
90000
一级代理商进口原装现货、假一罚十价格合理

MBRF2035数据表相关新闻