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MBR2035CT价格
参考价格：￥3.1024
型号：MBR2035CT 品牌：Fairchild 备注：这里有MBR2035CT多少钱，2025年最近7天走势，今日出价，今日竞价，MBR2035CT批发/采购报价，MBR2035CT行情走势销售排行榜，MBR2035CT报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MBR2035CT | Schottky Rectifiers Features • Low power loss, high efficiency. • High surge capacity. • For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. • Metal silicon junction, majority carrier conduction. • High current capacity, low forward voltage drop. • Guard ring f | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |   | |
MBR2035CT | Dual Common-Cathode Schottky Rectifier FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO- | VishayVishay Siliconix 威世科技 | | |
MBR2035CT | 20 Amp Schottky Barrier Rectifier 20 to 100 Volts Features • Meatl of Silicon Rectifier, Majority Conducton • Guard ring for transient protection • Low Forward Voltage Drop • High Current Capability, High Efficiency • Low Power Loss | MCC | | |
MBR2035CT | Schottky Barrier Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes. | MOSPEC 统懋 | | |
MBR2035CT | SWITCHMODE?? Power Rectifiers SWITCHMODE™ Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temperature • Guaranteed Reverse Avalanche • E | Motorola 摩托罗拉 | | |
MBR2035CT | 20.0 AMPS. Schottky Barrier Rectifiers FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition | TSC 台湾半导体 | | |
MBR2035CT | 20A SCHOTTKY BARRIER RECTIFIER Features • Schottky Barrier Chip • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • High Current Capability and Low Forward Voltage Drop • For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection | DIODES 美台半导体 | | |
MBR2035CT | 20.0 AMPS. Schottky Barrier Rectifiers Features ☆ Plastic material used carries Underwriters Laboratory Classifications 94V-0 ☆ Metal silicon junction, majority carrier conduction ☆ Low power loss, high efficiency ☆ High current capability, low forward voltage drop ☆ High surge capability ☆ For use in low voltage, high frequency | TSC 台湾半导体 | | |
MBR2035CT | SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE: 30 - 60 V CURRENT: 20 A FEATURES ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard r | BILIN 银河微电 | | |
MBR2035CT | 20Amp schottky barrier rectifier 20to100 volts Features ● Meatl of Silicon Rectifier, Majority Conducton ● Guard ring for transient protection ● Low Forward Voltage Drop ● High Current Capability, High Efficiency ● Low Power Loss | CHENYI 商朗电子 | | |
MBR2035CT | SCHOTTKY RECTIFIER Reverse Voltage - 35 to 60 Volts Forward Current - 20.0 Amperes FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ Dual rectifier construction, positive center tap ♦ Metal silicon junction, majority carrier conduction ♦ Low power loss, high efficien | GE | | |
MBR2035CT | SCHOTTKY RECTIFIER 20 Amp Description/ Features This center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150° C junction temperature. Typical applications are in switching power supplies, converters, free-wheel | IRF | | |
MBR2035CT | SCHOTTKY BARRIER RECTIFIER SCHOTTKY BARRIER RECTIFIER FEATURES ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss,High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters, Free Wheelin | JIANGSU 长电科技 | | |
MBR2035CT | Wide Temperature Range and High Tjm Schottky Barrier Rectifiers FEATURES * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity protection applica | SIRECTIFIER 矽莱克电子 | | |
MBR2035CT | 20A Dual Schottky Rectifiers PRODUCT SUMMARY Voltage ratings available from 35 to 60 Volts FEATURES • Plastic packages have Underwriters Laboratory Flammability Classification 94V-0 • Dual rectifier construction, positive center tap • Metal-silicon junction, majority carrier conduction • Low power loss, high efficiency | SSC Silicon Standard Corp. | | |
MBR2035CT | SCHOTTKY RECTIFIER Features: • 150 °C TJ operation • Center tap configuration • Low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • High frequency operation • Guard ring for enhanced ruggedness and long term reliability • | SMC 桑德斯微电子 | | |
MBR2035CT | 20A SCHOTTKY RECTIFIERS 20A SCHOTTKY RECTIFIERS Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. | DIGITRON | | |
MBR2035CT | 20.0AMPS. Schottky Barrier Rectifiers
| GXELECTRONICS 星合电子 | | |
MBR2035CT | SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE - 35 to 200Volts FORWARD CURRENT - 20.0 Amperes Features ◇ Plastic material used carriers Underwriters Laboratory Classification 94V-0 ◇ Metal silicon junction, majority carrier conduction ◇ Low power loss, high efficiency ◇ High current capability, low forward voltage drop ◇ | SHUNYE 顺烨电子 | | |
MBR2035CT | 20.0AMP. Schottky Barrier Rectifiers Features ◇ Plastic material used carries Underwriters Laboratory Classifications 94V-0 ◇ Metal silicon junction, majority carrier conduction ◇ Low power loss, high efficiency ◇ High current capability, low forward voltage drop ◇ High surge capability ◇ For use in low voltage, high frequency | LUGUANG 鲁光电子 | | |
MBR2035CT | 20.0 AMPS. Schottky Barrier Rectifiers Features ◇ Plastic material used carriers Underwriters Laboratory Classification 94V-0 ◇ Metal silicon junction, majority carrier conduction ◇ Low power loss, high efficiency ◇ High current capability, low forward voltage drop ◇ High surge capability ◇ For use in low voltage, high frequ | YIXIN 壹芯微 | | |
MBR2035CT | 20 Amp Schottky Barrier Rectifier 20 to 100 Volts Features • Meatl of Silicon Rectifier, Majority Conducton • Guard ring for transient protection • Low Forward Voltage Drop • High Current Capability, High Efficiency • Low Power Loss | KERSEMI | | |
MBR2035CT | Dual Common-Cathode Schottky Rectifier FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO- | KERSEMI | | |
MBR2035CT | 20 Amp Schottky Barrier Rectifier 20 to 100 Volts Features • Meatl of Silicon Rectifier, Majority Conducton • Guard ring for transient protection • Low Forward Voltage Drop • High Current Capability, High Efficiency • Low Power Loss | KERSEMI | | |
MBR2035CT | Plastic package has Underwriters Laboratory Flammability Classification 94V-0 FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO- | KERSEMI | | |
MBR2035CT | 20 Amp Schottky Barrier Rectifier 20 to 100 Volts Features • Meatl of Silicon Rectifier, Majority Conducton • Guard ring for transient protection • Low Forward Voltage Drop • High Current Capability, High Efficiency • Low Power Loss | KERSEMI | | |
MBR2035CT | Guardring for overvoltage protection FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO- | KERSEMI | | |
MBR2035CT | Plastic package has Underwriters Laboratory Flammability Classification 94V-0 SWITCHMODE™ Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • 20 Amps Total (10 Amps Per Diode Leg) • Guard–Ring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temper | KERSEMI | | |
MBR2035CT | 20 Amp Schottky Barrier Rectifier 20 to 100 Volts SWITCHMODE™ Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • 20 Amps Total (10 Amps Per Diode Leg) • Guard–Ring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temper | KERSEMI | | |
MBR2035CT | SWITCHMODE POWER RECTIFIERS Features • Meatl of Silicon Rectifier, Majority Conducton • Guard ring for transient protection • Low Forward Voltage Drop • High Current Capability, High Efficiency • Low Power Loss | KERSEMI | | |
MBR2035CT | 20 Amp Schottky Barrier Rectifier 20 to 100 Volts Features • Meatl of Silicon Rectifier, Majority Conducton • Guard ring for transient protection • Low Forward Voltage Drop • High Current Capability, High Efficiency • Low Power Loss | KERSEMI | | |
MBR2035CT | Dual SchottkyBarrierRectifiers ReverseVoltage 35 to 60Volts ForwardCurrent 20.0Amperes Reverse Volage 35 to 60 Volts Forward Current 20.0 Amperes Features ◆ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ◆ Dual rectifier construction, positive center tap ◆ Metal silicon junction, majority carrier conduction ◆ Low power loss, high efficiency ◆ | FS | | |
MBR2035CT | Dual SchottkyBarrierRectifiers ReverseVoltage 35 to 60Volts ForwardCurrent 20.0Amperes Reverse Volage 35 to 60 Volts Forward Current 20.0 Amperes Features ◆ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ◆ Dual rectifier construction, positive center tap ◆ Metal silicon junction, majority carrier conduction ◆ Low power loss, high efficiency ◆ | FS | | |
MBR2035CT | SCHOTTKY BARRIER RECTIFIER REVERSE VOLTAGE: 35 to 200 VOLTS FORWARD CURRENT: 20.0 AMPERE FEATURES • Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 • Metal silicon junction, majority carrier conduction • Guard ring for overvoltage protection • Low power loss, high efficiency • For u | HORNBY 南通康比电子 | | |
MBR2035CT | SCHOTTKY BARRIER RECTIFIER FEATURES • Schottky Barrier Chip • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • High Current Capability and Low Forward Voltage Drop • For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection | WINNERJOIN 永而佳 | | |
MBR2035CT | SCHOTTKY BARRIER RECTIFIERS VOLTAGE RANGE: 30 - 60 V CURRENT: 20 A FEATURES ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard r | DSK | | |
MBR2035CT | 20.0 Ampere Schottky Barrier Rectifiers 文件：376.74 Kbytes Page：2 Pages | THINKISEMI 思祁半导体 | | |
MBR2035CT | ITO-220AB 文件：99.01 Kbytes Page：2 Pages | LUGUANG 鲁光电子 | | |
MBR2035CT | Schottky | DIODES 美台半导体 | | |
MBR2035CT | 封装/外壳：TO-220-3 包装：散装 描述：DIODE ARRAY SCHOTTKY 35V TO220AB 分立半导体产品 二极管 - 整流器 - 阵列 | ETC 知名厂家 | ETC | |
MBR2035CT | 封装/外壳：TO-220-3 包装：管件 描述：DIODE SCHOTTKY 35V TO220AB 分立半导体产品 二极管 - 整流器 - 阵列 | SMCDIODE 桑德斯微电子 | | |
MBR2035CT | Dual Common Cathode Schottky Rectifier 文件：213.44 Kbytes Page：4 Pages | TSC 台湾半导体 | | |
MBR2035CT | 20.0 AMPS. Schottky Barrier Rectifiers 文件：208.95 Kbytes Page：2 Pages | TSC 台湾半导体 | | |
MBR2035CT | 20A SCHOTTKY BARRIER RECTIFIER 文件：67.07 Kbytes Page：3 Pages | DIODES 美台半导体 | | |
MBR2035CT | Dual Schottky Barrier Rectifiers 文件：257.38 Kbytes Page：3 Pages | Good-Ark 固锝电子 | | |
MBR2035CT | 20.0 AMPS. Schottky Barrier Rectifiers Low power loss, high efficiency 文件：242.74 Kbytes Page：3 Pages | TSC 台湾半导体 | | |
MBR2035CT | 20 Amp Schottky Barrier Rectifier 20 to 100 Volts 文件：188.39 Kbytes Page：3 Pages | MCC | | |
MBR2035CT | 20 Amp Schottky Barrier Rectifier 20 to 100 Volts 文件：279.91 Kbytes Page：3 Pages | MCC | | |
MBR2035CT | 20 Amp 20 to 100 Volts Barrier Rectifier Schottky 文件：279.91 Kbytes Page：3 Pages | MCC | | |
MBR2035CT | Schottky Rectifier, 2 x 10 A 文件：111.56 Kbytes Page：6 Pages | VishayVishay Siliconix 威世科技 | | |
MBR2035CT | Dual Common-Cathode Schottky Rectifier 文件：171.6 Kbytes Page：6 Pages | VishayVishay Siliconix 威世科技 | | |
20.0 AMPS. Schottky Barrier Rectifiers Features ☆ Plastic material used carries Underwriters Laboratory Classifications 94V-0 ☆ Metal silicon junction, majority carrier conduction ☆ Low power loss, high efficiency ☆ High current capability, low forward voltage drop ☆ High surge capability ☆ For use in low voltage, high frequency | TSC 台湾半导体 | | ||
SCHOTTKY RECTIFIER Features: • 150 °C TJ operation • Center tap configuration • Low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • High frequency operation • Guard ring for enhanced ruggedness and long term reliability • | SMC 桑德斯微电子 | | ||
SCHOTTKY RECTIFIER 20 Amp Description/ Features This center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150° C junction temperature. Typical applications are in switching power supplies, converters, free-wheel | IRF | | ||
Schottky Rectifier, 2 x 10 A IF(AV) 2 x 10 A VR 35/45 V IRM 15 mA at 125 °C DESCRIPTION This center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switchin | VishayVishay Siliconix 威世科技 | | ||
Schottky Rectifier, 2 x 10 A 文件：111.56 Kbytes Page：6 Pages | VishayVishay Siliconix 威世科技 | | ||
20.0 AMPS. Schottky Barrier Rectifiers 文件：665.7 Kbytes Page：2 Pages | TSC 台湾半导体 | | ||
20.0 AMPS. Schottky Barrier Rectifiers 文件：208.95 Kbytes Page：2 Pages | TSC 台湾半导体 | | ||
20.0 AMPS. Schottky Barrier Rectifiers Low power loss, high efficiency 文件：242.74 Kbytes Page：3 Pages | TSC 台湾半导体 | | ||
Dual Common Cathode Schottky Rectifier 文件：213.44 Kbytes Page：4 Pages | TSC 台湾半导体 | |
MBR2035CT产品属性
- 类型
描述
- 型号
MBR2035CT
- 功能描述
肖特基二极管与整流器 20 amp Rectifiers Schottky Barrier
- RoHS
否
- 制造商
Skyworks Solutions, Inc.
- 产品
Schottky Diodes
- 峰值反向电压
2 V
- 正向连续电流
50 mA
- 配置
Crossover Quad
- 正向电压下降
370 mV
- 最大功率耗散
75 mW
- 工作温度范围
- 65 C to + 150 C
- 安装风格
SMD/SMT
- 封装/箱体
SOT-143
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi(安森美) |
24+ |
TO220 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
IR |
24+ |
NA/ |
290 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ON/安森美 |
24+ |
TO-220AB |
30000 |
原装正品公司现货,假一赔十! |
|||
三年内 |
1983 |
只做原装正品 |
|||||
ON/安森美 |
25+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
||||
DIODES |
TO220 |
9500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
FAIRC |
24+ |
TO-220AB |
16800 |
绝对原装进口现货 假一赔十 价格优势!? |
|||
GS |
23+ |
TO-220 |
10000 |
专做原装正品,假一罚百! |
|||
ON/安森美 |
21+ |
TO-220AB |
8080 |
只做原装,质量保证 |
|||
DIODES/美台 |
21+ |
TO220 |
2000 |
MBR2035CT规格书下载地址
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