MBRF20120CT SCHOTTKY RECTIFIER

Features 150C TJ operation Center tap configuration Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Fre

肖特基二极管

肖特基二极管

SCHOTTKY RECTIFIER

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萧特基二极体 - Leaded Rectifier-MBR series

1200 V αSiC Silicon Carbide Schottky Barrier Diode

Features • Proprietary αSiC Schottky Barrier Diode technology • Negligible reverse recovery current • Maximum operating junction temperature of 175°C • Improved switching losses vs. Si bipolar diodes • Positive temperature coefficient for ease of paralleling Applications Renewable Industr

LOW VF SCHOTTKY RECTIFIER

文件：52.63 Kbytes Page：2 Pages

LOW VF SCHOTTKY RECTIFIER

文件：71.1 Kbytes Page：4 Pages

Ultra low forward voltage drop, low power loss

文件：98.01 Kbytes Page：4 Pages

Ultra low forward voltage drop, low power loss

文件：67.95 Kbytes Page：4 Pages