SCHOTTKY BARRIER RECTIFIER

FEATURES Metal-semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94

肖特基二极管

Dual rectifier construction, positive center tap

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Schottky Barrier Rectifier

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Product Specification

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Schottky Barrier Rectifier Reverse Voltage 40 to 100 V Forward Current 15 A

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Dual Schottky Barrier Rectifier

Features ● Schottky barrier chip ● Guard ring die constuction for transient protection ● Low power loss, high efficiency ● High current capability and low forward voltage drop ● High surge capability ● For use in low voltage, high frequency inverters, free wheeling, and polarity protection a

SCHOTTKY BARRIER RECTIFIER

VOLTAGE RANGE: 30 - 100 V CURRENT: 15 A FEATURES ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Gua

SCHOTTKY BARRIER RECTIFIERS

FEATURES ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard ring for over voltage protection.

SCHOTTKY BARRIER RECTIFIER

FEATURES ♦ High surge capacity. ♦ For use in low voltage, high frequency inverters,free wheeling,and polarity protection applications. ♦ Metal silicon junction,majority carrier conduction. ♦ High current capability,low forward voltage drop. ♦ Guard ring for over voltage protection.

Isolated plastic package has Underwriters Laboratory Flammability Classifications 94V-0

FEATURES ♦ Isolated plastic package has Underwriters Laboratory Flammability Classifications 94V-0 ♦ Metal silicon junction, majority carrier conduction ♦ Low power loss, high efficiency ♦ High current capability, low forward voltage drop ♦ High surge capability ♦ For use in low voltage,

SCHOTTKY ISOLATED PLASTIC RECTIFIER

FEATURES ♦ Isolated plastic package has Underwriters Laboratory Flammability Classifications 94V-0 ♦ Metal silicon junction, majority carrier conduction ♦ Low power loss, high efficiency ♦ High current capability, low forward voltage drop ♦ High surge capability ♦ For use in low voltage, hig

Schottky Barrier Rectifier

FEATURES ·Guard -Ring for Stress Protection ·Low Forward Voltage ·High Operating Junction Temperature ·Low Power Loss/High Efficiency ·High surge capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation

Isolation 15.0 AMPS. Schottky Barrier Rectifiers

FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - UL Recognized File # E-326243 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition

SCHOTTKY RECTIFIER

Features: • 150°C TJ operation • Center tap configuration • Low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • High frequency operation • Guard ring for enhanced ruggedness and long term reliability • T

Isolated 15.0AMP.Schottky Barrier Rectifiers

Features ◇ Plastic material used carries Underwriters Laboratory Classifications 94V-0 ◇ Metal silicon junction, majority carrier conduction ◇ Low power loss, high efficiency ◇ High current capability, low forward voltage drop ◇ High surge capability ◇ For use in low voltage, high frequency

MBRF1560CT SCHOTTKY RECTIFIER

Features 150C TJ operation Center tap configuration Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Fre

SCHOTTKY BARRIER RECTIFIER

FEATURES Metal-semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94

15A, 45V - 200V Dual Common Cathode Schottky Rectifiers

FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA Case: ITO-220AB Mo

Schottky Barrier Rectifiers

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封装/外壳：TO-220-3 全封装，隔离接片 包装：卷带（TR） 描述：DIODE ARRAY SCHOTT 60V ITO220AB 分立半导体产品 二极管 - 整流器 - 阵列

Dual Common Cathode Schottky Rectifier

Isolated 15.0 AMPS. Schottky Barrier Rectifiers

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Dual Common-Cathode Schottky Rectifier

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Dual Common Cathode Schottky Rectifier

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15.0 AMPS. Isolated Schottky Barrier Rectifiers

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SCHOTTKY BARRIER TYPE DIODE

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封装/外壳：TO-220-3 全封装，隔离接片 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE ARRAY SCHOTTKY 60V ITO220 分立半导体产品 二极管 - 整流器 - 阵列

15A, 60V, Schottky Rectifier

ULTRAFAST RECTIFIERS 15 AMPERES 200-400-600 VOLTS

SWITCHMODE Power Rectifiers . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 35 and 60 Nanosecond Recovery Time • 175°C Operating Junction Temperature • Popular TO–220 Package • H

Integrated Circuit Phase Lock Loop (PLL) FM Stereo Multiplex Demodulator

Description: The NTE1560 is an integrated circuit in a 16–Lead DIP type package designed for low voltage radio and cassette tape recorders. Features: • LED Mis–Turning Protection Circuit at Transient Operation Voltage • Provided with Forced Monaural and VCO Stop Circuits • High Pe

N-CHANNEL POWER MOS FET ARRAY SWITCHING INDUSTRIAL USE

DESCRIPTION The µPA1560 is N-Channel Power MOS FET Array that built in 4 circuits designed for solenoid, motor and lamp driver. FEATURES • Full mold package with 4 circuits • 4 V driving is possible • Low on-state resistance RDS(on)1 = 165 mΩ MAX. (VGS = 10 V, ID = 1.5 A)

N-CHANNEL POWER MOS FET ARRAY SWITCHING INDUSTRIAL USE

DESCRIPTION The µPA1560 is N-Channel Power MOS FET Array that built in 4 circuits designed for solenoid, motor and lamp driver. FEATURES • Full mold package with 4 circuits • 4 V driving is possible • Low on-state resistance RDS(on)1 = 165 mΩ MAX. (VGS = 10 V, ID = 1.5 A)

SWITCHMODE Power Rectifiers

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