High Voltage Schottky Rectifiers

FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum

High-Voltage Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum

Schottky Barrier Diode

FEATURES · Guarding for Overvoltage Protection · Metal Silicon Junction, Majority Carrier Conduction · Low Power Loss, High Efficiency APPLICATIONS · Free Wheeling Diode · High Frequency Inverters · Polarity Protection Applications

High-Voltage Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, dc-to-dc c

Trench MOS Schottky technology

Features • Low Power Loss • High Efficiency • Low Forward Voltage, High Current Capability • Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 • Marking : type number

Plastic package has Underwriters Laboratory Flammability Classifications 94V-0

This series of SWITCHMODE power rectifiers uses the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features: Features • Guard−Ring for Stress Protection • Low Forward Voltage • 175°C Operating Junction Temperature • Epoxy Meets UL 9

Plastic package has Underwriters Laboratory Flammability Classifications 94V-0

Features • Low Power Loss • High Efficiency • Low Forward Voltage , High Current Capability • High surge capacity • Case : ITO-220AC Full Molded Plastic Package

Switching power supply

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High-Voltage Schottky Rectifier

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2SCHOTTKY BARRIER RECTIFIER

VOLTAGE RANGE: 30 - 100 V CURRENT: 10 A FEATURES Metal silicon junction, majority carrier conduction. High current capacity, low forward voltage drop. Guard ring for over voltage protection. High surge capacity. For use in low voltage, high frequency inverters, free wheeling

Schottky Barrier Diode

FEATURES · High Surge Current Capability · Lower Power Losses, High Efficiency · Low Forward Voltage Drop APPLICATIONS · Switching Mode Power Supplies · DC to DC Converters · Free-Wheeling Diode

Schottky Barrier Diode

FEATURES · Guarding for Overvoltage Protection · Metal Silicon Junction, Majority Carrier Conduction · Low Power Loss, High Efficiency APPLICATIONS · Free Wheeling Diode · High Frequency Inverters · Polarity Protection Applications

Schottky Barrier Diode

FEATURES · Guarding for Overvoltage Protection · Metal Silicon Junction, Majority Carrier Conduction · Low Power Loss, High Efficiency APPLICATIONS · Free Wheeling Diode · High Frequency Inverters · Polarity Protection Applications

High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Material categorization: For definitions of compliance

High-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Material categorization: for definitions of compliance plea

High-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier

Trench MOS Schottky technology\nLower power losses, high efficiency\nLow forward voltage drop;

High-Voltage Trench MOS Barrier Schottky Rectifier

分立 ·Trench MOS Schottky technology\n·Lower power losses, high efficiency\n·Low forward voltage drop;

High-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Material categorization: for definitions of compliance plea

封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：管件 描述：DIODE ARRAY SCHOTTKY 90V TO263AB 分立半导体产品 二极管 - 整流器 - 阵列

封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE SCHOTTKY 90V 10A TO263AB 分立半导体产品 二极管 - 整流器 - 单

肖特基二极管与整流器 10A,90V,TRENCH SKY RECT.

SWITCHMODE??Power Rectifiers

SCHOTTKY BARRIER RECTIFIERS 10 AMPERES 60 to 100 VOLTS . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guard–Ring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temperature • Guara

MICROWAVE POWER TRANSISTORS

The RF Line Microwave Pulse Power Transistors Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 90 Watts Peak Minimum Gain = 8.4 dB • 100 Tested for Load Mismatch a

MICROWAVE POWER TRANSISTORS

The RF Line Microwave Pulse Power Transistors Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 90 Watts Peak Minimum Gain = 8.4 dB • 100 Tested for Load Mismatch a

MICROWAVE POWER TRANSISTORS

The RF Line Microwave Pulse Power Transistors Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 90 Watts Peak Minimum Gain = 8.4 dB • 100 Tested for Load Mismatch a

11-Output Configurable Clock Buffer

TriQuint’s TQ1090 is a configurable clock buffer which generates 11 outputs, operating over a wide range of frequencies from 33 MHz to 45MHz, 65 MHz to 90 MHz and 130 MHz to 180 MHz. The outputs are available at 1x, 2x and 4x, or at 1/2x, 1x and 2x, or at 1/4 x, 1/2 x and 1x the reference clock fr