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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MBR830 | Wide Temperature Range and High Tjm Schottky Barrier Rectifiers FEATURES * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity protection app | SIRECTIFIER 矽莱克电子 |   | |
MBR830 | SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE: 30 - 100 V CURRENT: 8.0 A FEATURES ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard | BILIN 银河微电 | | |
MBR830 | SCHOTTKY BARRIER RECTIFIERS FEATURES ● Metal of silicon rectifier , majority carrier conduction ● Guard ring for transient protection ● Low power loss,high efficiency ● High current capability,low VF ● High surge capacity ● Plastic package has UL flammability classification 94V-0 ● For use in low voltage,high frequenc | HY 虹扬科技 | | |
MBR830 | 8.0A SCHOTTKY BARRIER RECTIFIER Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss, High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity | KERSEMI | | |
MBR830 | Schottky Barrier Rectifiers VOLTAGE RANGE: 30 - 100 V CURRENT: 8.0 A Features ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ The pl | LUGUANG 鲁光电子 | | |
MBR830 | SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 100 Volts Forward Current -8.0 Amperes FEATURES ♦ The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ♦ Construction utilizes void-free molded plastic technique ♦ Low reverse leakage ♦ High forward surge current capability ♦ High | CHENDA 辰达半导体 | | |
MBR830 | 8.0A SCHOTTKY BARRIER RECTIFIER Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss, High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity | KERSEMI | | |
MBR830 | 8.0A SCHOTTKY BARRIER RECTIFIER Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss, High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity | DIODES 美台半导体 | | |
MBR830 | Guard Ring Die Construction for Transient Protection Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss, High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity | KERSEMI | | |
MBR830 | Schottky Barrier Chip Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss, High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity | KERSEMI | | |
MBR830 | 8.0A SCHOTTKY BARRIER RECTIFIER Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss, High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity | KERSEMI | | |
MBR830 | SCHOTTKY BARRIER RECTIFIER FEATURES Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94 | SAMYANG 三阳电子 | | |
MBR830 | SCHOTTKY BARRIER RECTIFIER FEATURES Metal-semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94 | SAMYANG 三阳电子 | | |
MBR830 | SCHOTTKY BARRIER RECTIFIER FEATURES Metal-semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94 | SAMYANG 三阳电子 | | |
MBR830 | Guard Ring Die Construction for Transient Protection Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss, High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity | KERSEMI | | |
MBR830 | SCHOTTKY BARRIER RECTIFIER Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Construction utilizes void-free molded plastic technique Low reverse leakage High forward surge current capability High temperature soldering guaranteed: 250 C,0.25”(6.35mm) from case for 10 seco | SY 顺烨电子 | | |
MBR830 | Schottky Barrier Recitifiers 文件：443.78 Kbytes Page：3 Pages | HY 虹扬科技 | | |
MBR830 | SCHOTTKY BARRIER RECTIFIER 文件：218.88 Kbytes Page：2 Pages | DSK | | |
MBR830 | SCHOTTKY BARRIER RECTIFIERS 文件：141.68 Kbytes Page：3 Pages | HY 虹扬科技 | | |
MBR830 | SCHOTTKY BARRIER RECTIFIER 文件：487.18 Kbytes Page：2 Pages | CHENDA 辰达半导体 | | |
MBR830 | High Tjm Low IRRM Schottky Barrier Diodes 文件：112.18 Kbytes Page：2 Pages | SIRECTIFIER 矽莱克电子 | | |
SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 100 Volts Forward Current -8.0 Amperes FEATURES ● The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ● Construction utilizes void-free ● molded plastic technique ● Low reverse leakage ● High forward surge | CHENDA 辰达半导体 | | ||
SCHOTTKY BARRIER RECTIFIER FEATURES Metal-semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94 | SAMYANG 三阳电子 | | ||
SCHOTTKY BARRIER RECTIFIER FEATURES Metal-semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94 | SAMYANG 三阳电子 | | ||
SCHOTTKY BARRIER RECTIFIER FEATURES Metal-semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94 | SAMYANG 三阳电子 | | ||
SCHOTTKY BARRIER RECTIFIER FEATURES Metal-semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94 | SAMYANG 三阳电子 | | ||
High Tjm Low IRRM Schottky Barrier Diodes 文件：112.18 Kbytes Page：2 Pages | SIRECTIFIER 矽莱克电子 | | ||
SCHOTTKY BARRIER RECTIFIERS 文件：141.68 Kbytes Page：3 Pages | HY 虹扬科技 | | ||
Schottky Barrier Recitifiers 文件：443.78 Kbytes Page：3 Pages | HY 虹扬科技 | | ||
SCHOTTKY BARRIER RECTIFIER 文件：654.54 Kbytes Page：2 Pages | CHENDA 辰达半导体 | | ||
SWITCHMODE Power Rectifiers 文件：64.8 Kbytes Page：4 Pages | ONSEMI 安森美半导体 | | ||
8 A, 30 V Schottky Diode in SO-8FL | ONSEMI 安森美半导体 | | ||
封装/外壳：8-PowerTDFN，5 引线 包装：散装 描述：DIODE SCHOTTKY 30V 8A 5DFN 分立半导体产品 二极管 - 整流器 - 单 | ONSEMI 安森美半导体 | | ||
SWITCHMODE Power Rectifiers 文件：64.8 Kbytes Page：4 Pages | ONSEMI 安森美半导体 | | ||
SWITCHMODE Power Rectifiers 文件：64.8 Kbytes Page：4 Pages | ONSEMI 安森美半导体 | | ||
封装/外壳：8-PowerTDFN，5 引线 包装：带盒（TB） 描述：DIODE SCHOTTKY 30V 8A 5DFN 分立半导体产品 二极管 - 整流器 - 单 | ONSEMI 安森美半导体 | | ||
Extra taps available upon request 文件：322.7 Kbytes Page：4 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
5A 500V N-channel Enhancement Mode Power MOSFET 文件：1.72598 Mbytes Page：12 Pages | WXDH 东海半导体 | | ||
ZERO ADJUSTMENT KNOB 文件：299.58 Kbytes Page：1 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
Precision Potentiometer 文件：158.35 Kbytes Page：4 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
PC Mount, Shocksafe 5x20mm Fuses 文件：84.08 Kbytes Page：1 Pages | Littelfuse 力特 | |
MBR830产品属性
- 类型
描述
- 型号
MBR830
- 制造商
HY
- 制造商全称
HY ELECTRONIC CORP.
- 功能描述
SCHOTTKY BARRIER RECTIFIERS
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
23+ |
SO-8 |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
三年内 |
1983 |
只做原装正品 |
|||||
24+ |
N/A |
47000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
DIODES/美台 |
2447 |
TO-220 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
ON/安森美 |
25+ |
电联咨询 |
7800 |
公司现货,提供拆样技术支持 |
|||
ONSEMI |
05+ |
原厂原装 |
10081 |
只做全新原装真实现货供应 |
|||
LITEON |
25+ |
TO220-2 |
4500 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
ONSEMI/安森美 |
25+ |
SO-8FL |
32360 |
ONSEMI/安森美全新特价MBR830MFST1G即刻询购立享优惠#长期有货 |
|||
ON/安森美 |
23+ |
TO252 |
50000 |
全新原装正品现货,支持订货 |
|||
Diodes |
17+ |
TO-220 |
6200 |
MBR830规格书下载地址
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