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位置：首页 > IC中文资料第11882页 > MBR830

型号 功能描述 生产厂家&企业 LOGO 操作
MBR830

Wide Temperature Range and High Tjm Schottky Barrier Rectifiers

FEATURES * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity protection app

SIRECTIFIERSirectifier Semiconductors

矽莱克电子江苏矽莱克电子科技有限公司

SIRECTIFIER
MBR830

SCHOTTKY BARRIER RECTIFIER

VOLTAGE RANGE: 30 - 100 V CURRENT: 8.0 A FEATURES ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard

BILINGalaxy Semi-Conductor Holdings Limited

银河微电常州银河世纪微电子股份有限公司

BILIN
MBR830

SCHOTTKY BARRIER RECTIFIERS

FEATURES ● Metal of silicon rectifier , majority carrier conduction ● Guard ring for transient protection ● Low power loss,high efficiency ● High current capability,low VF ● High surge capacity ● Plastic package has UL flammability classification 94V-0 ● For use in low voltage,high frequenc

HY

HY ELECTRONIC CORP.

HY
MBR830

8.0A SCHOTTKY BARRIER RECTIFIER

Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss, High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI
MBR830

Schottky Barrier Rectifiers

VOLTAGE RANGE: 30 - 100 V CURRENT: 8.0 A Features ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ The pl

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

LUGUANG
MBR830

SCHOTTKY BARRIER RECTIFIER

Reverse Voltage - 20 to 100 Volts Forward Current -8.0 Amperes FEATURES ♦ The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ♦ Construction utilizes void-free molded plastic technique ♦ Low reverse leakage ♦ High forward surge current capability ♦ High

CHENDAMicrodiode Electronics (Jiangsu) Co.,Ltd.

辰达半导体深圳辰达半导体有限公司

CHENDA
MBR830

8.0A SCHOTTKY BARRIER RECTIFIER

Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss, High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI
MBR830

8.0A SCHOTTKY BARRIER RECTIFIER

Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss, High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity

DIODESDiodes Incorporated

美台半导体

DIODES
MBR830

Guard Ring Die Construction for Transient Protection

Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss, High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI
MBR830

Schottky Barrier Chip

Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss, High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI
MBR830

8.0A SCHOTTKY BARRIER RECTIFIER

Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss, High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI
MBR830

SCHOTTKY BARRIER RECTIFIER

FEATURES Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94

SAMYANGSAMYANG ELECTRONICS CO.,LTD.

三阳电子三阳电子有限公司

SAMYANG
MBR830

SCHOTTKY BARRIER RECTIFIER

FEATURES Metal-semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94

SAMYANGSAMYANG ELECTRONICS CO.,LTD.

三阳电子三阳电子有限公司

SAMYANG
MBR830

SCHOTTKY BARRIER RECTIFIER

FEATURES Metal-semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94

SAMYANGSAMYANG ELECTRONICS CO.,LTD.

三阳电子三阳电子有限公司

SAMYANG
MBR830

Guard Ring Die Construction for Transient Protection

Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss, High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI
MBR830

SCHOTTKY BARRIER RECTIFIER

Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Construction utilizes void-free molded plastic technique Low reverse leakage High forward surge current capability High temperature soldering guaranteed: 250 C,0.25”(6.35mm) from case for 10 seco

SYChangzhou Shunye Electronics Co.,Ltd.

顺烨电子江苏顺烨电子有限公司

SY
MBR830

Schottky Barrier Recitifiers

文件：443.78 Kbytes Page：3 Pages

HY

HY ELECTRONIC CORP.

HY
MBR830

SCHOTTKY BARRIER RECTIFIER

文件：218.88 Kbytes Page：2 Pages

DSK

Diode Semiconductor Korea

DSK
MBR830

SCHOTTKY BARRIER RECTIFIERS

文件：141.68 Kbytes Page：3 Pages

HY

HY ELECTRONIC CORP.

HY
MBR830

SCHOTTKY BARRIER RECTIFIER

文件：487.18 Kbytes Page：2 Pages

CHENDAMicrodiode Electronics (Jiangsu) Co.,Ltd.

辰达半导体深圳辰达半导体有限公司

CHENDA
MBR830

High Tjm Low IRRM Schottky Barrier Diodes

文件：112.18 Kbytes Page：2 Pages

SIRECTIFIERSirectifier Semiconductors

矽莱克电子江苏矽莱克电子科技有限公司

SIRECTIFIER
MBR830CT

SCHOTTKY BARRIER RECTIFIER

Reverse Voltage - 20 to 100 Volts Forward Current -8.0 Amperes FEATURES ● The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ● Construction utilizes void-free ● molded plastic technique ● Low reverse leakage ● High forward surge

CHENDAMicrodiode Electronics (Jiangsu) Co.,Ltd.

辰达半导体深圳辰达半导体有限公司

CHENDA
MBR830CT

SCHOTTKY BARRIER RECTIFIER

FEATURES Metal-semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94

SAMYANGSAMYANG ELECTRONICS CO.,LTD.

三阳电子三阳电子有限公司

SAMYANG
MBR830CT

SCHOTTKY BARRIER RECTIFIER

FEATURES Metal-semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94

SAMYANGSAMYANG ELECTRONICS CO.,LTD.

三阳电子三阳电子有限公司

SAMYANG
MBR830CT

SCHOTTKY BARRIER RECTIFIER

FEATURES Metal-semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94

SAMYANGSAMYANG ELECTRONICS CO.,LTD.

三阳电子三阳电子有限公司

SAMYANG
MBR830CT

SCHOTTKY BARRIER RECTIFIER

FEATURES Metal-semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94

SAMYANGSAMYANG ELECTRONICS CO.,LTD.

三阳电子三阳电子有限公司

SAMYANG
MBR830_16

High Tjm Low IRRM Schottky Barrier Diodes

文件：112.18 Kbytes Page：2 Pages

SIRECTIFIERSirectifier Semiconductors

矽莱克电子江苏矽莱克电子科技有限公司

SIRECTIFIER
MBR830_17

SCHOTTKY BARRIER RECTIFIERS

文件：141.68 Kbytes Page：3 Pages

HY

HY ELECTRONIC CORP.

HY
MBR830_V01

Schottky Barrier Recitifiers

文件：443.78 Kbytes Page：3 Pages

HY

HY ELECTRONIC CORP.

HY
MBR830CT

SCHOTTKY BARRIER RECTIFIER

文件：654.54 Kbytes Page：2 Pages

CHENDAMicrodiode Electronics (Jiangsu) Co.,Ltd.

辰达半导体深圳辰达半导体有限公司

CHENDA
MBR830MFS

SWITCHMODE Power Rectifiers

文件：64.8 Kbytes Page：4 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MBR830MFST1G

SWITCHMODE Power Rectifiers

文件：64.8 Kbytes Page：4 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MBR830MFST1G

封装/外壳：8-PowerTDFN，5 引线 包装：散装 描述：DIODE SCHOTTKY 30V 8A 5DFN 分立半导体产品 二极管 - 整流器 - 单

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MBR830MFST3G

封装/外壳：8-PowerTDFN，5 引线 包装：带盒（TB） 描述：DIODE SCHOTTKY 30V 8A 5DFN 分立半导体产品 二极管 - 整流器 - 单

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MBR830MFST3G

SWITCHMODE Power Rectifiers

文件：64.8 Kbytes Page：4 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
830

5A 500V N-channel Enhancement Mode Power MOSFET

文件：1.72598 Mbytes Page：12 Pages

WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd

东海半导体江苏东海半导体股份有限公司

WXDH
830

ZERO ADJUSTMENT KNOB

文件：299.58 Kbytes Page：1 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

etc2
830

Precision Potentiometer

文件：158.35 Kbytes Page：4 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
830

PC Mount, Shocksafe 5x20mm Fuses

文件：84.08 Kbytes Page：1 Pages

Littelfuselittelfuse

力特力特公司

Littelfuse
830

Extra taps available upon request

文件：322.7 Kbytes Page：4 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

MBR830产品属性

  • 类型

    描述

  • 型号

    MBR830

  • 制造商

    HY

  • 制造商全称

    HY ELECTRONIC CORP.

  • 功能描述

    SCHOTTKY BARRIER RECTIFIERS

MBR830供应商更多...

更新时间：2025-8-5 15:48:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市锦喆鸿电子有限公司
MBR830
MDD
21+
TO-220AC
12588
原装正品,价格优势
询价
深圳市高捷芯城科技有限公司
MBR830MFST3G
onsemi(安森美)
24+
SO8FL
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
询价
深圳市纳立科技有限公司
MBR830MFST3G
三年内
1983
只做原装正品
询价
深圳市创新迹电子有限公司
MBR830
DIODES/美台
22+
TO-220
25000
只做原装进口现货,专注配单
询价
深圳市星佑电子有限公司
MBR835
ONSEMI
05+
原厂原装
10081
只做全新原装真实现货供应
询价
艾睿（深圳）半导体有限公司
MBR830
DIODES/美台
2447
TO-220
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
中天科工半导体（深圳）有限公司
MBR830MFST1G
ONSEMI/安森美
25+
SO-8FL
32360
ONSEMI/安森美全新特价MBR830MFST1G即刻询购立享优惠#长期有货
询价
深圳市振宏微科技有限公司
MBR830
DIODES
23+
TO-220
10000
专做原装正品,假一罚百!
询价
深圳市威雅利发展有限公司
MBR835B
ON/安森美
18+
TO252
100
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
深圳深宇韬电子科技有限公司
MBR835B
ON/安森美
2023+
TO252
8800
正品渠道现货 终端可提供BOM表配单。
询价

MBR830芯片相关品牌

  • CHENDA
  • FRANCEJOINT
  • HARWIN
  • IRF
  • Ricoh
  • SCHURTER
  • Semikron
  • Sensata
  • SICK
  • SKYWORKS
  • TDK
  • TOCOS

MBR830规格书下载地址

MBR830参数引脚图相关

MBR830数据表相关新闻

DdatasheetPDF页码索引

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