7.5 Ampere Schottky Barrier Rectifiers

Features • Low power loss, high efficiency. • High surge capacity. • For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. • Metal silicon junction, majority carrier conduction. • High current capacity, low forward voltage drop.

Schottky Barrier Rectifier

FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 • Material categorization: for definitions

7.5A SCHOTTKY BARRIER RECTIFIER

Features • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • High Current Capability and Low Forward Voltage Drop • For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Application • Lead-F

7.5 Amp Schottky Barrier Rectifier 20 to 60 Volts

Features • Halogen free available upon request by adding suffix -HF • Metal of siliconrectifier, majonty carrier conducton • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability • Lead Free Finish/RoHS Compliant(Note 1) (P Suffix

7.5 AMPS. Schottky Barrier Rectifiers

FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition

7.5Amp schottky barrier rectifier 20to60volts

Features • Metal of siliconrectifier, majonty carrier conducton • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability

SCHOTTKY RECTIFIER

Reverse Voltage - 35 to 60 Volts Forward Current - 7.5 Amperes FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 ♦ Metal to silicon rectifier, majority carrier conduction ♦ Low power loss, high efficiency ♦ High current capability, low forward

Plastic package has Underwriters Laboratory Flammability Classifications 94V-0

Features • Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • Guardring for overvoltage protection • For use in low voltage, high frequency inverters, free wheeling, and polar

Metal of siliconrectifier, majonty carrier conducton

Features • Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • Guardring for overvoltage protection • For use in low voltage, high frequency inverters, free wheeling, and polar

Metal of siliconrectifier, majonty carrier conducton

Features • Metal of siliconrectifier, majonty carrier conducton • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability • Lead Free Finish/RoHS Compliant(Note 1) (P Suffix designates RoHS Compliant. See ordering information) • Cas

Plastic material used carries Underwriters Laboratory Classifications 94V-0

Features ◇ Plastic material used carries Underwriters Laboratory Classifications 94V-0 ◇ Metal silicon rectifier, majority carrier conduction ◇ Low power loss, high efficiency ◇ High current capability, low forward voltage drop ◇ High surge capability ◇ For use in low voltage, hi

Plastic package has Underwriters Laboratory Flammability Classifications 94V-0

Features • Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • Guardring for overvoltage protection • For use in low voltage, high frequency inverters, free wheeling, and polar

Plastic package has Underwriters Laboratory Flammability Classifications 94V-0

Features • Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • Guardring for overvoltage protection • For use in low voltage, high frequency inverters, free wheeling, and polar

Plastic package has Underwriters Laboratory Flammability Classifications 94V-0

Features • Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • Guardring for overvoltage protection • For use in low voltage, high frequency inverters, free wheeling, and polar

Wide Temperature Range and High Tjm Schottky Barrier Rectifiers

High Tjm Low IRRM Schottky Barrier Diodes FEATURES * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, f

SCHOTTKY BARRIER RECTIFIER DIODES

PRV : 35~60 Volts Io : 7.5 Amperes FEATURES : * Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 * Metal silicon junction, majority carrier conduction * Low power loss, high efficiency * Guardring for overvoltage protection * For use in low voltage, high fr

SCHOTTKY BARRIER RECTIFIER

Reverse Voltage - 20 to 100 Volts Forward Current -7.5 Amperes FEATURES ♦ The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ♦ Construction utilizes void-free molded plastic technique ♦ Low reverse leakage ♦ High forward surge current capab

SCHOTTKY RECTIFIER

Applications Switching power supply Redundant power subsystems Converters Free-Wheeling diodes Reverse battery protection Features 150℃ TJ operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Low forward voltage drop High

Schottky Barrier Rectifier

Power pack\nGuardring for overvoltage protection\nLow power loss, high efficiency;

Planar Schottky Diode

The UTC MBR760 is a 7.5A schottky barrier rectifier, it uses UTC’s advanced technology to provide customers with low power loss, low forward voltage drop, high efficiency and high current capability. The UTC MBR760 is suitable for free wheeling, high frequency inverters, polarity protection applicat

肖特基二极管

7 .0 A SCHOTTKY BARRIER DIODE

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SCHOTTKY RECTIFIER

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封装/外壳：TO-220-2 包装：卷带（TR） 描述：DIODE SCHOTTKY 60V 7.5A TO220AC 分立半导体产品 二极管 - 整流器 - 单

High Tjm Low IRRM Schottky Barrier Diodes

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SCHOTTKY BARRIER RECTIFIER

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封装/外壳：TO-220-2 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE SCHOTTKY 60V 7.5A TO220AC 分立半导体产品 二极管 - 整流器 - 单

Schottky Barrier Rectifier

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7.5 AMPS. Schottky Barrier Rectifiers

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7.5 AMPS. Schottky Barrier Rectifiers

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7.5 AMPS. Schottky Barrier Rectifiers

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Schottky Barrier Rectifier

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7.5 Amp Schottky Barrier Rectifier 20 to 60 Volts

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7.5A SCHOTTKY BARRIER RECTIFIER

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7.5 Amp Schottky Barrier Rectifier 20 to 60 Volts

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Schottky Barrier Rectifier

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SCHOTTKY BARRIER RECTIFIER

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Schottky Barrier Rectifier

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Schottky Barrier Rectifier

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Schottky Barrier Rectifier

FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder bath temperature 275 °C maximum, 10 s, per    JESD 22-B106 • Material categorization: for definitio

Schottky Barrier Rectifier

文件：239.28 Kbytes Page：4 Pages

Schottky Barrier Rectifier

文件：239.28 Kbytes Page：4 Pages

SCHOTTKY BARRIER RECTIFIER

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Schottky Barrier Rectifier

文件：239.28 Kbytes Page：4 Pages

SCHOTTKY BARRIER RECTIFIER

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HIGH CURRENT LEAD MOUNTED SILICON RECTIFIERS 50-1000 VOLTS DIFFUSED JUNCTION

HIGH CURRENT LEAD MOUNTED SILICON RECTIFIERS 50–1000 VOLTS DIFFUSED JUNCTION • Current Capacity Comparable to Chassis Mounted Rectifiers • Very High Surge Capacity • Insulated Case Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 2.5 grams (approximately) • Finish: All External S

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 4 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C ● 1000 Volt Blocking Capability ● 75 W at 25°C Case Temperature

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 4 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C ● 1000 Volt Blocking Capability ● 75 W at 25°C Case Temperature

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 4 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C ● 1200 Volt Blocking Capability ● 75 W at 25°C Case Temperature

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 4 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C ● 1200 Volt Blocking Capability ● 75 W at 25°C Case Temperature