| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MBR6050PT | 60.0 AMPS. Schottky Barrier Rectifiers FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - UL Recognized File # E-326243 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition | TSC 台湾半导体 | ||
MBR6050PT | 60.0 AMPS. Schottky Barrier Rectifiers FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - UL Recognized File # E-326243 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition | TSC 台湾半导体 | ||
MBR6050PT | 60 AMPERES SCHOTTKY BARRIER RECTIFIERS VOLTAGE 20 to 100 Volts CURRENT 60 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency. • High current capabili | PANJIT 強茂 | ||
MBR6050PT | SCHOTTKY BARRIER RECTIFIERS VOLTAGE 20 to 100 Volts CURRENT 60 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency. • High current capabili | PANJIT 強茂 | ||
MBR6050PT | Schottky Barrier Rectifiers Features ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard ring for over voltage protection. | LUGUANG 鲁光电子 | ||
MBR6050PT | SCHOTTKY BARRIER RECTIFIERS VOLTAGE RANGE: 30 - 100 V CURRENT: 60 A FEATURES ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard r | DSK | ||
MBR6050PT | 60Ampere Heatsink Dual Common Cathode Schottky Barrier Rectifier Diodes Features Low forward voltage drop ThinkiSemi matured planar process schottky High current capability High surge current capability Low reverse leakage current Application Inverter/UPS Plating Power Supply/SMPS Car Audio Amplifier and Sound Device System | THINKISEMI 思祁半导体 | ||
MBR6050PT | 60.0A SCHOTTKY BARRIER DIODE 文件:166.76 Kbytes Page:2 Pages | ZSELEC 淄博圣诺 | ||
MBR6050PT | Schottky Barrier Rectifiers Reverse Voltage 40 to 200 Volts, Forward Current 60A 文件:393.83 Kbytes Page:2 Pages | FS | ||
MBR6050PT | 60 AMPS. Schottky Barrier Rectifiers 文件:479.39 Kbytes Page:2 Pages | TSC 台湾半导体 | ||
MBR6050PT | Dual Common Cathode Schottky Rectifier 文件:222.12 Kbytes Page:4 Pages | TSC 台湾半导体 | ||
MBR6050PT | 60 AMPS. Schottky Barrier Rectifiers 文件:369.39 Kbytes Page:2 Pages | TSC 台湾半导体 | ||
MBR6050PT | 功率肖特基二极管(IF ≧ 1A) | PANJIT 強茂 | ||
Schottky Barrier Rectifier Reverse Voltage: 30 to 100V Forward Current: 60.0A RoHS Device Features - Guard ring for overvoltage protection. - Low power loss, high efficiency. - Low reverse leakage current. - High Surge Current Capability. | COMCHIP 典琦 | |||
Schottky Barrier Rectifier Reverse Voltage: 30 to 100V Forward Current: 60.0A RoHS Device Features - Guard ring for overvoltage protection. - Low power loss, high efficiency. - Low reverse leakage current. - High Surge Current Capability. | COMCHIP 典琦 | |||
Schottky Barrier Rectifier 文件:77.57 Kbytes Page:3 Pages | MARL | |||
封装/外壳:TO-247-3 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:SCHOTTKY BARRIER RECTIFIERS 分立半导体产品 二极管 - 整流器 - 阵列 | ETC 知名厂家 | ETC | ||
Si Schottky Rectifier Diodes | MICROCHIP 微芯科技 | |||
包装:管件 描述:DIODE SCHOTTKY 60A 50V TO-247AD 分立半导体产品 二极管 - 整流器 - 单 | MICROCHIP 微芯科技 | |||
Schottky Barrier Rectifier 文件:77.57 Kbytes Page:3 Pages | COMCHIP 典琦 | |||
SWITCHING DIODE Switching Diode | ZOWIE 智威 | |||
N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, a | FAIRCHILD 仙童半导体 | |||
High-speed diode DESCRIPTION The PMBD6050 is a high-speed switching diode fabricated in planar technology, and encapsulated in the small SOT23 plastic SMD package. FEATURES • Small plastic SMD package • High switching speed: max. 4 ns • Continuous reverse voltage: max. 70 V • Repetitive peak reverse voltage: | PHILIPS 飞利浦 | |||
SCRs 1-70 AMPS NON-SENSITIVE GATE Features ● Electrically Isolated Packages ● High Voltage Capability - 30 - 600 Volts ● High Surge Capability - up to 950 Amps ● Glass Passivated Chip | TECCOR | |||
Silicon Switching Diode Silicon Switching Diode ● For high-speed switching applications | SIEMENS 西门子 |
MBR6050PT产品属性
- 类型
描述
- VRRM Max.[V]:
50
- IF[A]:
60
- IFSM[A]:
400
- VF@IF Max.[V]:
0.79
- VF@IF Max.[A]:
30
- IR@VR Max.[µA]:
100
- IR@VR Max.[V]:
50
- Package:
TO-3P\\/TO-247AD
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MICROCHIP(美国微芯) |
26+ |
- |
16000 |
原装认证库存更多原厂可发 |
|||
MCC/美微科 |
25+ |
SOD123 |
98192 |
价格从优 欢迎来电咨询 |
|||
ON |
15+ |
SOD123 |
12000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ON |
2023+ |
SOD123 |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
|||
24+ |
3000 |
公司现货 |
|||||
ON |
23+ |
SOD123 |
12000 |
全新原装正品现货,支持订货 |
|||
ON(安森美) |
2511 |
9550 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
||||
有有主力推 |
23+ |
TO-220F |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
ACUTE |
2447 |
SMD5 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
ON/安森美 |
23+ |
SOD123 |
50000 |
全新原装正品现货,支持订货 |
MBR6050PT规格书下载地址
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DdatasheetPDF页码索引
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