40A SCHOTTKY BARRIER RECTIFIER

Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss, High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protect

SCHOTTKY BARRIER RECTIFIERS

REVERSE VOLTAGE - 30 to 60 Volts FORWARD CURRENT - 40 Amperes FEATURES ● Metal of silicon rectifier,majority carrier conducton ● Guard ring for transient protection ● Low power loss, high efficiency ● High current capability, low VF ● High surge capacity ● Plastic package has UL flammabili

Wide Temperature Range and High Tjm Schottky Barrier Rectifiers

[SIRECTIFIER] FEATURES * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity

Wide Temperature Range and High Tjm Schottky Barrier Rectifiers

FEATURES * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity protection app

40 AMPERES SCHOTTKY BARRIER RECTIFIERS

VOLTAGE 20 to 100 Volts CURRENT 40 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency. • High current capability

40 Amp Schottky Barrier Rectifier 20 to 60 Volts

Features • High Surge Capacity • Low Power Loss, High Efficiency • High Current Capability • Metal of silicon Rectifier, majority Carrier Conduction • Guard Ring For Transient Protection

SCHOTTKY BARRIER RECTIFIERS

FEATURES ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard ring for over voltage protection.

Schottky Barrier Rectifiers

VOLTAGE RANGE: 30 - 100 V CURRENT: 40 A Features Metal silicon junction, majority carrier conduction. High current capacity, low forward voltage drop. Guard ring for over voltage protection. High surge capacity. For use in low voltage, high frequency inverters, free wheeling

封装/外壳：TO-3P-3，SC-65-3 包装：管件 描述：DIODE ARRAY SCHOTTKY 30V TO3P 分立半导体产品 二极管 - 整流器 - 阵列

SCHOTTKY BARRIER RECTIFIERS

肖特基二极管

40A SCHOTTKY BARRIER RECTIFIER

High Tjm Low IRRM Schottky Barrier Diodes

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40A SCHOTTKY BARRIER RECTIFIER

文件：63.83 Kbytes Page：3 Pages

40A SCHOTTKY BARRIER RECTIFIER

文件：63.83 Kbytes Page：3 Pages

40A SCHOTTKY BARRIER RECTIFIER

文件：69.88 Kbytes Page：3 Pages

High Tjm Low IRRM Schottky Barrier Diodes

文件：136.9 Kbytes Page：2 Pages

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • High reliability, achieved by the DHD structure • Allowing to insert to a 5 mm pitch hole • Finely divided zener-voltage rank • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 39 V

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • High reliability, achieved by the DHD structure • Allowing to insert to a 5 mm pitch hole • Finely divided zener-voltage rank • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 39 V

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • High reliability, achieved by the DHD structure • Allowing to insert to a 5 mm pitch hole • Finely divided zener-voltage rank • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 39 V

SWITCHMODE??Power Rectifier

SWITCHMODE Power Rectifier Using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection • Maximum Die Size • 150°C Operating Junction Temperature • Short Heat Sink Tab Manufactured – Not Sh

POWER TRANSISTORS(16A,60-100V,150W)

MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS ...designed for use as output devices in complementary general purpose amplifier applications. FEATURES: * High Gain Darlington Performance * DCCurrent Gain hFE = 3500(Typ) @ lc = 10A * Monolithic Construction with Built-in Base-Emitter Shunt Res