SCHOTTKY BARRIER RECTIFIERS

FEATURES ● Metal-Semiconductor junction with guard ring ● Epitaxial construction ● Low forward voltage drop ● High current capability ● The plastic material carries UL recognition 94V-0 ● For use in low voltage,high frequency inverters,free wheeling,and polarity protection applications

SCHOTTKY BARRIER RECTIFIERS

VOLTAGE 40 to 200 Volt CURRENT 3 Ampere FEATURES • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • High Current Capability and Low Forward Voltage Drop • Surge Overload Rating to 80A Peak • For Use in Low Voltage, High Frequen

3.0A SCHOTTKY BARRIER DIODE

Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● High Current Capability ● Low Power Loss, High Efficiency ● High Surge Current Capability ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications

SCHOTTKY BARRIER RECTIFIER

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SCHOTTKY BARRIER RECTIFIERS

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功率肖特基二极管(IF ≧ 1A)

SCHOTTKY BARRIER RECTIFIER REVERSE VOLTAGE 20V TO 200V FORWARD CURRENT 3.0A

DESCRIPTION The MBR 3 20 F ~MBR 3 200 F are available in SOD 123FL Pa ckage FEATURES  Plastic package has Underwriters Laboratory Flammability Classification 94V 0  Low power loss, high efficiency  For use in low voltage high frequency inverters, free wheeling, and polarity protecti

封装/外壳：DO-201AD，轴向 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：SCHOTTKY BARRIER RECTIFIERS 分立半导体产品 二极管 - 整流器 - 单

Surface Mount Schottky Barrier Rectifier

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SCHOTTKY DIODES

SCHOTTKY BARRIER RECTIFIER

文件：152.75 Kbytes Page：3 Pages

SCHOTTKY BARRIER RECTIFIER

文件：152.75 Kbytes Page：3 Pages

肖特基二极管

SCHOTTKY BARRIER RECTIFIER

文件：152.75 Kbytes Page：3 Pages

SCHOTTKY BARRIER RECTIFIER

文件：152.75 Kbytes Page：3 Pages

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Mini type package (3-pin) • Allowing to achieve a high-density set • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 36 V

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Mini type package (3-pin) • Allowing to achieve a high-density set • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 36 V

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Mini type package (3-pin) • Allowing to achieve a high-density set • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 36 V

DUAL TMOS POWER MOSFET 11.5 AMPERES 20 VOLTS

Medium Power Surface Mount Products TMOS Dual N-Channel Field Effect Transistors WaveFET™ devices are an advanced series of power MOSFETs which utilize Motorola’s latest MOSFET technology process to achieve the lowest possible on–resistance per silicon area. They are capable of withstanding high

1.3 關m Laser-Diode DIP Module

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