型号 功能描述 生产厂家 企业 LOGO 操作
MBR30H100PT

High-Voltage Dual Schottky Rectifiers

Features • Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 • Dual rectifier construction, positive center-tap • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • High current capability, low forward voltage drop • High surg

VishayVishay Siliconix

威世威世科技公司

MBR30H100PT

Dual Common Cathode High Voltage Schottky Rectifier

FEATURES • Power pack • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequency operation • Solder dip 275 °C max., 10 s, per JESD 22-B106 • Material categorization: for de

VishayVishay Siliconix

威世威世科技公司

MBR30H100PT

SCHOTTKY BARRIER RECTIFIERS

Feaures High efficiencty operation and Low power loss High forward surge capability Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std..(Halogen Free) Low stored charge majority carrier conduction

SUNMATE

森美特

MBR30H100PT

Dual Common Cathode High Voltage Schottky Rectifier

文件:86.14 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

MBR30H100PT

Dual Common Cathode High Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance

VishayVishay Siliconix

威世威世科技公司

Dual Common-Cathode High-Voltage Schottky Rectifier

Dual Common-Cathode High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • Hig

VishayVishay Siliconix

威世威世科技公司

Dual Common-Cathode High-Voltage Schottky Rectifier

Dual Common-Cathode High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • Hig

VishayVishay Siliconix

威世威世科技公司

封装/外壳:TO-3P-3,SC-65-3 包装:卷带(TR)剪切带(CT) 描述:DIODE ARRAY SCHOTTKY 100V TO3P 分立半导体产品 二极管 - 整流器 - 阵列

ETC

知名厂家

封装/外壳:TO-3P-3,SC-65-3 包装:管件 描述:DIODE ARRAY SCHOTTKY 100V TO3P 分立半导体产品 二极管 - 整流器 - 阵列

ETC

知名厂家

Dual Common-Cathode High-Voltage Schottky Rectifier

VishayVishay Siliconix

威世威世科技公司

100 V field-effect rectifier diode

Features  ST advanced rectifier process  Stable leakage current over reverse voltage  Reduced leakage current  Low forward voltage drop  High frequency operation  ECOPACK®2 compliant component

STMICROELECTRONICS

意法半导体

100 V field-effect rectifier diode

Features  ST advanced rectifier process  Stable leakage current over reverse voltage  Reduced leakage current  Low forward voltage drop  High frequency operation  ECOPACK®2 compliant component

STMICROELECTRONICS

意法半导体

30 Ampere Insulated Dual Common Cathode Schottky Barrier Rectifier Diode

文件:385.31 Kbytes Page:2 Pages

THINKISEMI

思祁半导体

100 V field-effect rectifier diode

文件:474.3 Kbytes Page:14 Pages

STMICROELECTRONICS

意法半导体

100 V field-effect rectifier diode

文件:474.3 Kbytes Page:14 Pages

STMICROELECTRONICS

意法半导体

MBR30H100PT产品属性

  • 类型

    描述

  • 型号

    MBR30H100PT

  • 制造商

    VISHAY

  • 制造商全称

    Vishay Siliconix

  • 功能描述

    High-Voltage Dual Schottky Rectifiers

更新时间:2025-11-26 8:36:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
PANJIT/强茂
2223+
TO-220
26800
只做原装正品假一赔十为客户做到零风险
ON/安森美
22+
TO-247
87838
PANJIT/强茂
23+
TO-220
89630
当天发货全新原装现货
ON
23+
TO-220
11846
一级代理商现货批发,原装正品,假一罚十
ON
2023+
TO-247
8800
正品渠道现货 终端可提供BOM表配单。
PANJIT/强茂
24+
NA/
4250
原装现货,当天可交货,原型号开票
ON
1922+
TO-247
246
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ONSEMI/安森美
2450+
TO220
8850
只做原装正品假一赔十为客户做到零风险!!
VISHAY/威世
23+
TO3P
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
Vishay Semiconductor Diodes Di
22+
TO3P
9000
原厂渠道,现货配单

MBR30H100PT数据表相关新闻