MBR3045W价格
参考价格:¥10.5214
型号:MBR3045WTG 品牌:ONSemi 备注:这里有MBR3045W多少钱,2026年最近7天走势,今日出价,今日竞价,MBR3045W批发/采购报价,MBR3045W行情走势销售排行榜,MBR3045W报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MBR3045W | 30 Amp Schottky Barrier Rectifier 20 to 100 Volts Features ● High Surge Capacity ● Low Power Loss, High Efficiency ● High Current Capability, Low VF ● Metal of silicon Rectifier, majority Carrier Conduction ● Guard Ring For Transient Protection ● Plastic Package Has UL Flammability Classification 94V-0 | MCC | ||
MBR3045W | 30 Amp Schottky Barrier Rectifier 20 to 100 Volts Features ● High Surge Capacity ● Low Power Loss, High Efficiency ● High Current Capability, Low VF ● Metal of silicon Rectifier, majority Carrier Conduction ● Guard Ring For Transient Protection ● Plastic Package Has UL Flammability Classification 94V-0 | PFS 平盛电子 | ||
MBR3045W | 肖特基二极管 | MCPL | ||
SCHOTTKY RECTIFIER Features: • 150 ℃ TJ operation • Center tap TO-247AD package • Low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • High frequency operation • Guard ring for enhanced ruggedness and long term reliability • Th | SMC 桑德斯微电子 | |||
肖特基势垒整流器,30 A,45 V This Schottky Rectifier uses the Schottky Barrier principle with a platinum barrier metal. • Dual Diode Construction - Terminals 1 and 3 may be Connected forParallel Operation at Full Rating\n• Guardring for Stress Protection\n• Low Forward Voltage\n• 150°C Operating Junction Temperature\n• Popular TO-247 PackageMechanical Characteristics:\n• Case: Epoxy, Molded\n• Weight: 4.3 grams ; | ONSEMI 安森美半导体 | |||
30 Amp Schottky Barrier Rectifier 20 to 60 Volts Features ● High Surge Capacity ● Low Power Loss, High Efficiency ● High Current Capability, Low VF ● Metal of silicon Rectifier, majority Carrier Conduction ● Guard Ring For Transient Protection ● Plastic Package Has UL Flammability Classification 94V-0 | MCC | |||
SWITCHMODE Power Rectifier SWITCHMODE Power Rectifier These state−of−the−art devices use the Schottky Barrier principle with a platinum barrier metal. Features • Dual Diode Construction; Terminals 1 and 3 may be Connected for Parallel Operation at Full Rating • Guardring for Stress Protection • Low Forward Voltage • 1 | ONSEMI 安森美半导体 | |||
Schottky Rectifier, 2 x 15 A DESCRIPTION The MBR30 WT center tap Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters | VISHAYVishay Siliconix 威世威世科技公司 | |||
Schottky Barrier Rectifier FEATURES • Dual diode construction;terminals 1 and 3 may be connected for parallel operation at full rating • Low forward voltage • Guarding for stress protection • 150℃ operating junction temperature • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and re | ISC 无锡固电 | |||
30A SCHOTTKY RECTIFIER 30A SCHOTTKY RECTIFIER Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. | DIGITRON | |||
SWITCHMODE Power Rectifier SWITCHMODE Power Rectifier These state−of−the−art devices use the Schottky Barrier principle with a platinum barrier metal. Features • Dual Diode Construction; Terminals 1 and 3 may be Connected for Parallel Operation at Full Rating • Guardring for Stress Protection • Low Forward Voltage • 1 | ONSEMI 安森美半导体 | |||
Switch Mode Power Rectifier SWITCHMODE Power Rectifier These state−of−the−art devices use the Schottky Barrier principle with a platinum barrier metal. Features • Dual Diode Construction; Terminals 1 and 3 may be Connected for Parallel Operation at Full Rating • Guardring for Stress Protection • Low Forward Voltage • 1 | ONSEMI 安森美半导体 | |||
MBR3045WTP SCHOTTKY RECTIFIER Features 150 C TJ operation Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Free Device All SMC parts a | SMCDIODE 桑德斯微电子 | |||
SCHOTTKY RECTIFIER Features: • 150 ℃ TJ operation • Center tap TO-247AD package • Low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • High frequency operation • Guard ring for enhanced ruggedness and long term reliability • Th | SMC 桑德斯微电子 | |||
Schottky Rectifier, 2 x 15 A DESCRIPTION The VS-MBR30 WT center tap Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, conv | VISHAYVishay Siliconix 威世威世科技公司 | |||
封装/外壳:TO-247-3 包装:管件 描述:DIODE ARRAY SCHOTTKY 45V TO247 分立半导体产品 二极管 - 整流器 - 阵列 | ONSEMI 安森美半导体 | |||
封装/外壳:TO-247-3 包装:托盘 描述:DIODE ARRAY SCHOTTKY 45V TO247AC 分立半导体产品 二极管 - 整流器 - 阵列 | ETC 知名厂家 | ETC | ||
Schottky Diodes | FORMOSA 美丽微半导体 | |||
Schottky Rectifier, 2 x 15 A 文件:162.04 Kbytes Page:7 Pages | VISHAYVishay Siliconix 威世威世科技公司 | |||
Schottky Rectifier, 2 x 15 A 文件:162.04 Kbytes Page:7 Pages | VISHAYVishay Siliconix 威世威世科技公司 | |||
SWITCHMODE??Power Rectifier SWITCHMODE™ Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. This state–of–the–art device has the following features: • Dual Diode Construction — Terminals 1 and 3 May Be Connected for Parallel Operation at Full Rating • 45 V Blocking Voltage • Low Forw | MOTOROLA 摩托罗拉 | |||
Optoisolator Silicon NPN Darlington Phototransistor Output Description: The NTE3045 is a gallium arsenide LED optically coupled to a Silicon Photo Darlington transistor in a 6–Lead DIP type package designed for applications requiring electrical isolation, high breakdown voltage, and high current transfer ratios. Characterized for use as telephone relay d | NTE | |||
Rectifier diodes schottky barrier GENERAL DESCRIPTION Dual, low leakage, platinum barrier, schottky rectifier diodes in a plastic envelope featuring low forward voltage drop and absence of stored charge. These devices can withstand reverse voltage transients and have guaranteed reverse surge capability. The devices are intended | PHILIPS 飞利浦 | |||
LM3045/LM3046/LM3086 Transistor Arrays 文件:179.01 Kbytes Page:6 Pages | NSC 国半 | |||
LM3045/LM3046/LM3086 Transistor Arrays 文件:179.01 Kbytes Page:6 Pages | NSC 国半 |
MBR3045W产品属性
- 类型
描述
- Pb-free:
Pb
- Halide free:
H
- Status:
Active
- Configuration:
Common Cathode
- VRRM Min (V):
45
- VF Max (V):
0.76
- IRM Max (µA):
1000
- IO(rec) Max (A):
30
- IFSM Max (A):
200
- Package Type:
TO-247-3
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON |
26+ |
TO-220 |
890000 |
一级总代理商原厂原装大批量现货
一站式服务 |
|||
MOT |
25+ |
TO-247 |
2987 |
绝对全新原装现货供应! |
|||
IR |
23+ |
TO-247 |
65400 |
||||
ON |
25+23+ |
TO-3P |
28728 |
绝对原装正品全新进口深圳现货 |
|||
ON |
23+ |
TO-247 |
8560 |
受权代理!全新原装现货特价热卖! |
|||
ON |
24+ |
TO-247 |
6000 |
进口原装正品假一赔十,货期7-10天 |
|||
M |
TO-3P |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
ON |
15+ |
TO247 |
35 |
全新 发货1-2天 |
|||
ON |
24+ |
TO247 |
9750 |
郑重承诺只做原装进口现货 |
|||
24+ |
3000 |
公司现货 |
MBR3045W规格书下载地址
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DdatasheetPDF页码索引
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