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MBR3045W价格

参考价格:¥10.5214

型号:MBR3045WTG 品牌:ONSemi 备注:这里有MBR3045W多少钱,2026年最近7天走势,今日出价,今日竞价,MBR3045W批发/采购报价,MBR3045W行情走势销售排行榜,MBR3045W报价。
型号 功能描述 生产厂家 企业 LOGO 操作
MBR3045W

30 Amp Schottky Barrier Rectifier 20 to 100 Volts

Features ● High Surge Capacity ● Low Power Loss, High Efficiency ● High Current Capability, Low VF ● Metal of silicon Rectifier, majority Carrier Conduction ● Guard Ring For Transient Protection ● Plastic Package Has UL Flammability Classification 94V-0

MCC

MBR3045W

30 Amp Schottky Barrier Rectifier 20 to 100 Volts

Features ● High Surge Capacity ● Low Power Loss, High Efficiency ● High Current Capability, Low VF ● Metal of silicon Rectifier, majority Carrier Conduction ● Guard Ring For Transient Protection ● Plastic Package Has UL Flammability Classification 94V-0

PFS

平盛电子

MBR3045W

肖特基二极管

MCPL

SCHOTTKY RECTIFIER

Features: • 150 ℃ TJ operation • Center tap TO-247AD package • Low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • High frequency operation • Guard ring for enhanced ruggedness and long term reliability • Th

SMC

桑德斯微电子

肖特基势垒整流器,30 A,45 V

This Schottky Rectifier uses the Schottky Barrier principle with a platinum barrier metal. • Dual Diode Construction - Terminals 1 and 3 may be Connected forParallel Operation at Full Rating\n• Guardring for Stress Protection\n• Low Forward Voltage\n• 150°C Operating Junction Temperature\n• Popular TO-247 PackageMechanical Characteristics:\n• Case: Epoxy, Molded\n• Weight: 4.3 grams ;

ONSEMI

安森美半导体

30 Amp Schottky Barrier Rectifier 20 to 60 Volts

Features ● High Surge Capacity ● Low Power Loss, High Efficiency ● High Current Capability, Low VF ● Metal of silicon Rectifier, majority Carrier Conduction ● Guard Ring For Transient Protection ● Plastic Package Has UL Flammability Classification 94V-0

MCC

SWITCHMODE Power Rectifier

SWITCHMODE Power Rectifier These state−of−the−art devices use the Schottky Barrier principle with a platinum barrier metal. Features • Dual Diode Construction; Terminals 1 and 3 may be Connected for Parallel Operation at Full Rating • Guardring for Stress Protection • Low Forward Voltage • 1

ONSEMI

安森美半导体

Schottky Rectifier, 2 x 15 A

DESCRIPTION The MBR30 WT center tap Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters

VISHAYVishay Siliconix

威世威世科技公司

Schottky Barrier Rectifier

FEATURES • Dual diode construction;terminals 1 and 3 may be connected for parallel operation at full rating • Low forward voltage • Guarding for stress protection • 150℃ operating junction temperature • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and re

ISC

无锡固电

30A SCHOTTKY RECTIFIER

30A SCHOTTKY RECTIFIER Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

DIGITRON

SWITCHMODE Power Rectifier

SWITCHMODE Power Rectifier These state−of−the−art devices use the Schottky Barrier principle with a platinum barrier metal. Features • Dual Diode Construction; Terminals 1 and 3 may be Connected for Parallel Operation at Full Rating • Guardring for Stress Protection • Low Forward Voltage • 1

ONSEMI

安森美半导体

Switch Mode Power Rectifier

SWITCHMODE Power Rectifier These state−of−the−art devices use the Schottky Barrier principle with a platinum barrier metal. Features • Dual Diode Construction; Terminals 1 and 3 may be Connected for Parallel Operation at Full Rating • Guardring for Stress Protection • Low Forward Voltage • 1

ONSEMI

安森美半导体

MBR3045WTP SCHOTTKY RECTIFIER

Features 150 C TJ operation Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Free Device All SMC parts a

SMCDIODE

桑德斯微电子

SCHOTTKY RECTIFIER

Features: • 150 ℃ TJ operation • Center tap TO-247AD package • Low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • High frequency operation • Guard ring for enhanced ruggedness and long term reliability • Th

SMC

桑德斯微电子

Schottky Rectifier, 2 x 15 A

DESCRIPTION The VS-MBR30 WT center tap Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, conv

VISHAYVishay Siliconix

威世威世科技公司

封装/外壳:TO-247-3 包装:管件 描述:DIODE ARRAY SCHOTTKY 45V TO247 分立半导体产品 二极管 - 整流器 - 阵列

ONSEMI

安森美半导体

封装/外壳:TO-247-3 包装:托盘 描述:DIODE ARRAY SCHOTTKY 45V TO247AC 分立半导体产品 二极管 - 整流器 - 阵列

ETC

知名厂家

Schottky Diodes

FORMOSA

美丽微半导体

Schottky Rectifier, 2 x 15 A

文件:162.04 Kbytes Page:7 Pages

VISHAYVishay Siliconix

威世威世科技公司

Schottky Rectifier, 2 x 15 A

文件:162.04 Kbytes Page:7 Pages

VISHAYVishay Siliconix

威世威世科技公司

SWITCHMODE??Power Rectifier

SWITCHMODE™ Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. This state–of–the–art device has the following features: • Dual Diode Construction — Terminals 1 and 3 May Be Connected for Parallel Operation at Full Rating • 45 V Blocking Voltage • Low Forw

MOTOROLA

摩托罗拉

Optoisolator Silicon NPN Darlington Phototransistor Output

Description: The NTE3045 is a gallium arsenide LED optically coupled to a Silicon Photo Darlington transistor in a 6–Lead DIP type package designed for applications requiring electrical isolation, high breakdown voltage, and high current transfer ratios. Characterized for use as telephone relay d

NTE

Rectifier diodes schottky barrier

GENERAL DESCRIPTION Dual, low leakage, platinum barrier, schottky rectifier diodes in a plastic envelope featuring low forward voltage drop and absence of stored charge. These devices can withstand reverse voltage transients and have guaranteed reverse surge capability. The devices are intended

PHILIPS

飞利浦

LM3045/LM3046/LM3086 Transistor Arrays

文件:179.01 Kbytes Page:6 Pages

NSC

国半

LM3045/LM3046/LM3086 Transistor Arrays

文件:179.01 Kbytes Page:6 Pages

NSC

国半

MBR3045W产品属性

  • 类型

    描述

  • Pb-free:

    Pb

  • Halide free:

    H

  • Status:

    Active

  • Configuration:

    Common Cathode

  • VRRM Min (V):

    45

  • VF Max (V):

    0.76

  • IRM Max (µA):

    1000

  • IO(rec) Max (A):

    30

  • IFSM Max (A):

    200

  • Package Type:

    TO-247-3

更新时间:2026-8-1 17:24:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON
26+
TO-220
890000
一级总代理商原厂原装大批量现货 一站式服务
MOT
25+
TO-247
2987
绝对全新原装现货供应!
IR
23+
TO-247
65400
ON
25+23+
TO-3P
28728
绝对原装正品全新进口深圳现货
ON
23+
TO-247
8560
受权代理!全新原装现货特价热卖!
ON
24+
TO-247
6000
进口原装正品假一赔十,货期7-10天
M
TO-3P
68500
一级代理 原装正品假一罚十价格优势长期供货
ON
15+
TO247
35
全新 发货1-2天
ON
24+
TO247
9750
郑重承诺只做原装进口现货
24+
3000
公司现货

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