SWITCHMODE Power Rectifier

SWITCHMODE Power Rectifier These state−of−the−art devices use the Schottky Barrier principle with a platinum barrier metal. Features • Dual Diode Construction; Terminals 1 and 3 may be Connected for Parallel Operation at Full Rating • Guardring for Stress Protection • Low Forward Voltage • 1

Schottky Rectifier, 2 x 15 A

DESCRIPTION The MBR30 WT center tap Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters

30 Amp Schottky Barrier Rectifier 20 to 60 Volts

Features ● High Surge Capacity ● Low Power Loss, High Efficiency ● High Current Capability, Low VF ● Metal of silicon Rectifier, majority Carrier Conduction ● Guard Ring For Transient Protection ● Plastic Package Has UL Flammability Classification 94V-0

Schottky Barrier Rectifier

FEATURES • Dual diode construction;terminals 1 and 3 may be connected for parallel operation at full rating • Low forward voltage • Guarding for stress protection • 150℃ operating junction temperature • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and re

SCHOTTKY RECTIFIER

Features: • 150 ℃ TJ operation • Center tap TO-247AD package • Low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • High frequency operation • Guard ring for enhanced ruggedness and long term reliability • Th

30A SCHOTTKY RECTIFIER

30A SCHOTTKY RECTIFIER Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

肖特基势垒整流器，30 A，45 V

This Schottky Rectifier uses the Schottky Barrier principle with a platinum barrier metal. • Dual Diode Construction - Terminals 1 and 3 may be Connected forParallel Operation at Full Rating\n• Guardring for Stress Protection\n• Low Forward Voltage\n• 150°C Operating Junction Temperature\n• Popular TO-247 PackageMechanical Characteristics:\n• Case: Epoxy, Molded\n• Weight: 4.3 grams ;

封装/外壳：TO-247-3 包装：管件 描述：DIODE ARRAY SCHOTTKY 45V TO247 分立半导体产品 二极管 - 整流器 - 阵列

封装/外壳：TO-247-3 包装：托盘 描述：DIODE ARRAY SCHOTTKY 45V TO247AC 分立半导体产品 二极管 - 整流器 - 阵列

SWITCHMODE Power Rectifier

SWITCHMODE Power Rectifier These state−of−the−art devices use the Schottky Barrier principle with a platinum barrier metal. Features • Dual Diode Construction; Terminals 1 and 3 may be Connected for Parallel Operation at Full Rating • Guardring for Stress Protection • Low Forward Voltage • 1

Switch Mode Power Rectifier

SWITCHMODE Power Rectifier These state−of−the−art devices use the Schottky Barrier principle with a platinum barrier metal. Features • Dual Diode Construction; Terminals 1 and 3 may be Connected for Parallel Operation at Full Rating • Guardring for Stress Protection • Low Forward Voltage • 1

MBR3045WTP SCHOTTKY RECTIFIER

Features 150 C TJ operation Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Free Device All SMC parts a

SCHOTTKY RECTIFIER

Features: • 150 ℃ TJ operation • Center tap TO-247AD package • Low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • High frequency operation • Guard ring for enhanced ruggedness and long term reliability • Th

Schottky Rectifier, 2 x 15 A

DESCRIPTION The VS-MBR30 WT center tap Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, conv

Schottky Diodes

Schottky Rectifier, 2 x 15 A

文件：162.04 Kbytes Page：7 Pages

Schottky Rectifier, 2 x 15 A

文件：162.04 Kbytes Page：7 Pages

SWITCHMODE??Power Rectifier

SWITCHMODE™ Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. This state–of–the–art device has the following features: • Dual Diode Construction — Terminals 1 and 3 May Be Connected for Parallel Operation at Full Rating • 45 V Blocking Voltage • Low Forw

Optoisolator Silicon NPN Darlington Phototransistor Output

Description: The NTE3045 is a gallium arsenide LED optically coupled to a Silicon Photo Darlington transistor in a 6–Lead DIP type package designed for applications requiring electrical isolation, high breakdown voltage, and high current transfer ratios. Characterized for use as telephone relay d

Rectifier diodes schottky barrier

GENERAL DESCRIPTION Dual, low leakage, platinum barrier, schottky rectifier diodes in a plastic envelope featuring low forward voltage drop and absence of stored charge. These devices can withstand reverse voltage transients and have guaranteed reverse surge capability. The devices are intended

LM3045/LM3046/LM3086 Transistor Arrays

文件：179.01 Kbytes Page：6 Pages

LM3045/LM3046/LM3086 Transistor Arrays

文件：179.01 Kbytes Page：6 Pages