Not ESD Sensitive

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Silicon Power Schottky Diode

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封装/外壳：双塔架 包装：管件 描述：DIODE MODULE 35V 150A 2TOWER 分立半导体产品 二极管 - 整流器 - 阵列

Modules

封装/外壳：双塔架 包装：散装 描述：DIODE SCHOTTKY 35V 150A 2 TOWER 分立半导体产品 二极管 - 整流器 - 阵列

300 Amp Rectifier 20 to 100 Volts Schottky Barrier

Features • Metal of siliconrectifier, majonty carrier conducton • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability

Schottky PowerMod

● Schottky Barrier Rectifier ● Guard Ring Protection ● 300 Amperes/35 to 50 Volts ● 175°C Junction Temperature ● Reverse Energy Tested ● ROHS Compliant

300 Amp Rectifier 30 to 90 Volts Schottky Barrier

Features · Metal of siliconrectifier, majonty carrier conducton · Guard ring for transient protection · Low power loss high efficiency · High surge capacity, High current capability

SWITCHMODE??Schottky Power Rectifier(POWERTAP III Package)

SWITCHMODE Schottky Power Rectifier POWERTAP III Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high f

SWITCHMODE??Schottky Power Rectifier(POWERTAP III Package)

SWITCHMODE Schottky Power Rectifier POWERTAP III Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high f