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MBR2080C价格
参考价格:¥3.7909
型号:MBR2080CTG 品牌:ON 备注:这里有MBR2080C多少钱,2025年最近7天走势,今日出价,今日竞价,MBR2080C批发/采购报价,MBR2080C行情走势销售排行榜,MBR2080C报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
20 AMPERES SCHOTTKY BARRIER RECTIFIERS FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-0. Flame Retardant Epoxy Molding Compound. • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency. • High current capability • For use in low voltage, high frequen | DYELECDIYI Electronic Technology Co., Ltd. 迪一电子山东迪一电子科技有限公司 | |||
40 to 200 Volts Forward Current - 20.0 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-0. Flame Retardant Epoxy Molding Compound. • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency. • High current capability • For use in low voltage, high frequen | CHENDA 辰达半导体 | |||
SCHOTTKY RECTIFIERS VOLTAGE 20~ 20 0Volts CURRENT 20 Ampers FEATURES • Power pack • Metal silicon junction ,majority carrier conduction • Guard ring for overvoltage protection • Low power loss ,high efficiency • High current capability ,low forward voltage drop • High forward surge capab | NIUHANG 纽航电子 | |||
20.0 AMP SCHOTTKY BARRIER RECTIFIERS TO-220 PACKAGE FEATURES * Low switching noise * Low forward voltage drop * High current capability * High reliability * High surge capability * RoHS product for packing code suffix G Halogen free product for packing code suffix H * EPI WAFER | WILLASWILLAS ELECTRONIC CORP 威伦威伦电子股份有限公司 | |||
SURFACE MOUNT SCHOTTKYBARRIER RECTIFIERS FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-0. Flame Retardant Epoxy Molding Compound. • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency. • High current capability • For use in low voltage, high frequen | DYELECDIYI Electronic Technology Co., Ltd. 迪一电子山东迪一电子科技有限公司 | |||
20 Amp Schottky Barrier Rectifier 20 to 100 Volts Features • Meatl of Silicon Rectifier, Majority Conducton • Guard ring for transient protection • Low Forward Voltage Drop • High Current Capability, High Efficiency • Low Power Loss | KERSEMI | |||
DUAL SCHOTTKY RECTIFIERS FEATURES ◇ High surge capacity. ◇ For use in low voltage, high frequencyinverters, free wheeling, and polarityprotection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard ring for over voltage protection. | DSK | |||
20 Amp Schottky Barrier Rectifier 20 to 100 Volts Features • Meatl of Silicon Rectifier, Majority Conducton • Guard ring for transient protection • Low Forward Voltage Drop • High Current Capability, High Efficiency • Low Power Loss | KERSEMI | |||
High surge capacity FEATURES ◇ High surge capacity. ◇ For use in low voltage, high frequencyinverters, free wheeling, and polarityprotection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard ring for over voltage protection. | SHUNYE 顺烨电子 | |||
REVERSE VOLTAGE 40 to 200 Volts RORWARD CURRENT 20.0 Amperes SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE 40 to 200 Volts RORWARD CURRENT 20.0 Amperes | FORMOSA 美丽微半导体 | |||
20A SCHOTTKY RECTIFIERS 20A SCHOTTKY RECTIFIERS Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. | DIGITRON | |||
SCHOTTKY BARRIER RECTIFIER FEATURES • Schottky Barrier Chip • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • High Current Capability and Low Forward Voltage Drop • For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection | WINNERJOIN 永而佳 | |||
20 Amp Schottky Barrier Rectifier 20 to 100 Volts Features • Meatl of Silicon Rectifier, Majority Conducton • Guard ring for transient protection • Low Forward Voltage Drop • High Current Capability, High Efficiency • Low Power Loss | KERSEMI | |||
SWITCHMODE POWER RECTIFIERS SWITCHMODE™ Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • 20 Amps Total (10 Amps Per Diode Leg) • Guard–Ring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temper | KERSEMI | |||
20 to 100 Volts Forward Current - Reverse Voltage - 20 to 100 Volts Forward Current - 20.0 Amperes FEATURES ♦ The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ♦ Construction utilizes void-free molded plastic technique ♦ Low reverse leakage ♦ High forward surge current capability ♦ | CHENDA 辰达半导体 | |||
SCHOTTKY RECTIFIERS VOLTAGE 20~ 20 0Volts CURRENT 20 Ampers FEATURES • Power pack • Metal silicon junction ,majority carrier conduction • Guard ring for overvoltage protection • Low power loss ,high efficiency • High current capability ,low forward voltage drop • High forward surge capab | NIUHANG 纽航电子 | |||
20 Amp Schottky Barrier Rectifier 20 to 100 Volts Features • Meatl of Silicon Rectifier, Majority Conducton • Guard ring for transient protection • Low Forward Voltage Drop • High Current Capability, High Efficiency • Low Power Loss | KERSEMI | |||
SCHOTTKY BARRIER RECTIFIER FEATURES Metal-semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94 | SAMYANG 三阳电子 | |||
SCHOTTKY BARRIER RECTIFIER REVERSE VOLTAGE: 35 to 200 VOLTS FORWARD CURRENT: 20.0 AMPERE FEATURES • Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 • Metal silicon junction, majority carrier conduction • Guard ring for overvoltage protection • Low power loss, high efficiency • For u | HORNBY 南通康比电子 | |||
MBR2080CT MBR2090CT MBR20100CT SCHOTTKY RECTIFIER Features 150C TJ operation Center tap configuration Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Fr | SMCDIODE 桑德斯微电子 | |||
SWITCHMODE Power Rectifiers SWITCHMODE Power Rectifiers This series uses the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features: Features • 20 A Total (10 A Per Diode Leg) • Guard−Ring for Stress Protection • Low Forward Voltage • 175°C Operating Junctio | KERSEMI | |||
20 Amp Schottky Barrier Rectifier 20 to 100 Volts SWITCHMODE™ Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • 20 Amps Total (10 Amps Per Diode Leg) • Guard–Ring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temper | KERSEMI | |||
SCHOTTKY BARRIER RECTIFIER FEATURES Metal-semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94 | SAMYANG 三阳电子 | |||
SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 200 Volts Forward Current - 20Amperes FEATURES Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Metal silicon junction ,majority carrier conduction Guard ring for overvoltage protection Low power loss ,high efficiency | GXELECTRONICS 星合电子 | |||
20 AMPERES SCHOTTKY BARRIER RECTIFIERS VOLTAGE 40 to 200 Volt CURRENT 20 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Low power loss, high efficiency. • High current capability • For use in low voltage, high frequency inverters | PANJIT 強茂 | |||
SWITCHMODE??Power Rectifiers SWITCHMODE™ Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • 20 Amps Total (10 Amps Per Diode Leg) • Guard–Ring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temper | Motorola 摩托罗拉 | |||
20A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER Features • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • High Current Capability and Low Forward Voltage Drop • For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications • L | DIODES 美台半导体 | |||
20 Amp Schottky Barrier Rectifier 20 to 100 Volts Features • Meatl of Silicon Rectifier, Majority Conducton • Guard ring for transient protection • Low Forward Voltage Drop • High Current Capability, High Efficiency • Low Power Loss | MCC 美微科 | |||
Wide Temperature Range and High Tjm Schottky Barrier Rectifiers FEATURES * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity protection app | SIRECTIFIER 矽莱克电子 | |||
DUAL SCHOTTKY RECTIFIERS VOLTAGE RANGE: 70 - 100 V CURRENT: 20 A FEATURES ◇ High surge capacity. ◇ For use in low voltage, high frequencyinverters, free wheeling, and polarityprotection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard | BILIN 银河微电 | |||
SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE - 30 to 150Volts FORWARD CURRENT - 20.0 Amperes FEATURES ● Metal of silicon rectifier , majority carrier conduction ● Guard ring for transient protection ● Low power loss,high efficiency ● High current capability,low VF ● High surge capacity ● Plastic package has UL flammab | HY | |||
SWITCHMODE??Power Rectifiers This series uses the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features: Features • 20 Amps Total (10 Amps Per Diode Leg) • Guard−Ring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temperature • Epoxy | ONSEMI 安森美半导体 | |||
20Amp schottky barrier rectifier 20to100 volts Features ● Meatl of Silicon Rectifier, Majority Conducton ● Guard ring for transient protection ● Low Forward Voltage Drop ● High Current Capability, High Efficiency ● Low Power Loss | CHENYI 商朗电子 | |||
SCHOTTKY BARRIER RECTIFIERS SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE -20to 200Volts FORWARD CURRENT -20.0Amperes FEATURES ● Metal-Semiconductor junction with guard ring ● Epitaxial construction ● Low forward voltage drop ● High current capability ● The plastic material carries UL recognition 94V-0 ● For use in | CTC ctconline | |||
Schottky Rectifier, 2 x 10 A DESCRIPTION This center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, | VishayVishay Siliconix 威世科技威世科技半导体 | |||
SCHOTTKY RECTIFIER Features: • 150 °C TJ operation • Center tap configuration • Low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • High frequency operation • Guard ring for enhanced ruggedness and long term reliability Applic | SENSITRON | |||
Schottky Rectifier, 2 x 10 A DESCRIPTION This center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Schottky Rectifier, 2 x 10 A DESCRIPTION This center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, | VishayVishay Siliconix 威世科技威世科技半导体 | |||
SCHOTTKY RECTIFIER Features • Metal of siliconrectifier, majonty carrier conducton • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability | KERSEMI | |||
Schottky Rectifier, 2 x 10 A DESCRIPTION This center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Schottky Rectifier, 2 x 10 A DESCRIPTION This center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Schottky Rectifier, 2 x 10 A DESCRIPTION This center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Schottky Rectifier, 2 x 10 A DESCRIPTION This center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Schottky Rectifier, 2 x 10 A DESCRIPTION This center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Schottky Rectifier, 2 x 10 A DESCRIPTION This center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, | VishayVishay Siliconix 威世科技威世科技半导体 | |||
SWITCHMODE??Power Rectifiers This series uses the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features: Features • 20 Amps Total (10 Amps Per Diode Leg) • Guard−Ring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temperature • Epoxy | ONSEMI 安森美半导体 | |||
Switch-mode Power Rectifiers This series uses the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features: Features • 20 Amps Total (10 Amps Per Diode Leg) • Guard−Ring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temperature • Epoxy | ONSEMI 安森美半导体 | |||
SCHOTTKY RECTIFIER Features: • 150 °C TJ operation • Center tap configuration • Low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • High frequency operation • Guard ring for enhanced ruggedness and long term reliability Applic | SENSITRON | |||
Schottky Rectifier, 2 x 10 A DESCRIPTION This center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Schottky Rectifier, 2 x 10 A DESCRIPTION This center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Schottky Rectifier, 2 x 10 A DESCRIPTION This center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Schottky Rectifier, 2 x 10 A DESCRIPTION This center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Schottky Rectifier, 2 x 10 A DESCRIPTION This center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Schottky Rectifier, 2 x 10 A DESCRIPTION This center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Schottky Rectifier, 2 x 10 A DESCRIPTION This center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Schottky Rectifier, 2 x 10 A DESCRIPTION This center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Schottky Rectifier, 2 x 10 A DESCRIPTION This center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Schottky Rectifier, 2 x 10 A DESCRIPTION This center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Schottky Rectifier, 2 x 10 A DESCRIPTION This center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Schottky Rectifier, 2 x 10 A DESCRIPTION This center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, | VishayVishay Siliconix 威世科技威世科技半导体 |
MBR2080C产品属性
- 类型
描述
- 型号
MBR2080C
- 功能描述
肖特基二极管与整流器 20A 80V
- RoHS
否
- 制造商
Skyworks Solutions, Inc.
- 产品
Schottky Diodes
- 峰值反向电压
2 V
- 正向连续电流
50 mA
- 配置
Crossover Quad
- 正向电压下降
370 mV
- 最大功率耗散
75 mW
- 工作温度范围
- 65 C to + 150 C
- 安装风格
SMD/SMT
- 封装/箱体
SOT-143
- 封装
Reel
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
GS |
2447 |
TO-220 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
ON进口原装 |
22+ |
TO-220 |
25000 |
只有原装原装,支持BOM配单 |
|||
MCC |
23+ |
TO220 |
18 |
原装房间现货假一赔十 |
|||
IR |
2020+ |
TO-220 |
2000 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
ON |
24+ |
TO-2203LEADSTANDA |
8866 |
||||
IR |
23+ |
TO-220 |
350 |
全新原装正品现货,支持订货 |
|||
ON |
2015+ |
TO-2203 |
12500 |
全新原装,现货库存长期供应 |
|||
PANJIT/强茂 |
23+ |
TO220 |
50000 |
全新原装正品现货,支持订货 |
|||
ON/安森美 |
25+ |
电联咨询 |
7800 |
公司现货,提供拆样技术支持 |
|||
ON Semiconductor |
22+ |
TO220AB |
9000 |
原厂渠道,现货配单 |
MBR2080C规格书下载地址
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MBR2080C数据表相关新闻
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焕盛达竭诚为广大客户提供一站式配套服务,解决您的BOM表采购之痛,让您采购无忧!
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- P98
- P99
- P100
- P101
- P102
- P103