SWITCHMODEE TM Power Rectifier

SCHOTTKY BARRIER RECTIFIER 20 AMPERES 45 VOLTS . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temperature • Epoxy Meets UL9

20A SCHOTTKY BARRIER RECTIFIER

Features • Low Forward Voltage Drop • Soft, Fast Switching Capability • Schottky Barrier Chip • ITO-220S Heat Sink Tab Electrically Isolated from Cathode • UL Approval in Accordance with UL 1557, Reference No. E94661 Mechanical Data • Case: ITO-220S • Case Material: Molded Plastic, UL Flam

MBR2045CTP SCHOTTKY RECTIFIER

Features 150C TJ operation Center tap configuration Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability Terminals finish:

封装/外壳：TO-220-3 隔离片 包装：管件 描述：DIODE ARRAY SCHOTTKY 45V ITO220S 分立半导体产品 二极管 - 整流器 - 阵列

封装/外壳：TO-220-3 包装：散装 描述：DIODE ARRAY SCHOTTKY 45V TO220AB 分立半导体产品 二极管 - 整流器 - 阵列

20A SCHOTTKY BARRIER RECTIFIER

SCHOTTKY RECTIFIER

文件：143.72 Kbytes Page：6 Pages

Schottky Rectifier, 2 x 10 A

文件：136.85 Kbytes Page：6 Pages

Schottky Rectifier, 2 x 10 A

IF(AV) 2 x 10 A VR 35/45 V IRM 15 mA at 125 °C DESCRIPTION This center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switchin

SCHOTTKY RECTIFIER 20 Amp

Description/ Features This center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150° C junction temperature. Typical applications are in switching power supplies, converters, free-wheel

20A SCHOTTKY BARRIER RECTIFIER

文件：84.7 Kbytes Page：4 Pages

Schottky Rectifier, 2 x 10 A

文件：162.95 Kbytes Page：7 Pages

Schottky Rectifier, 2 x 10 A

文件：136.85 Kbytes Page：6 Pages

Schottky Rectifier, 2 x 10 A

SWITCHMODE?? Power Rectifiers

SWITCHMODE™ Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temperature • Guaranteed Reverse Avalanche • E

UHF power LDMOS transistor

DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT467C) with a ceramic cap. The common source is connected to the mounting flange. FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on underside el

UHF power transistor

DESCRIPTION NPN silicon planar UHF power transistor in a 2-lead SOT390A flange package with a ceramic cap. The emitter is connected to the flange. FEATURES • Emitter ballasting resistors for optimum temperature profile • Gold metallization ensures excellent reliability • Internal input and ou

SWITCHMODE??Schottky Power Rectifirer

SCHOTTKY BARRIER RECTIFIER 20 AMPERES 45 VOLTS The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use

SCHOTTKY BARRIER RECTIFIERS(20A,30-45V)

SWITCHMODE POWER RECTIFIERS D PAK SURFACE MOUNT POWER PACKAGE The D PAK Power rectifier employs the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art devices have the following features: * Low Forward Voltage * Low Switching noise * High Surge Capacity * Guara