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MBR2045CTPBF

Schottky Rectifier, 2 x 10 A

IF(AV) 2 x 10 A VR 35/45 V IRM 15 mA at 125 °C DESCRIPTION This center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switchin

VISHAYVishay Siliconix

威世威世科技公司

MBR2045CTPBF

SCHOTTKY RECTIFIER 20 Amp

Description/ Features This center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150° C junction temperature. Typical applications are in switching power supplies, converters, free-wheel

IRF

MBR2045CTPBF

Schottky Rectifier, 2 x 10 A

VISHAYVishay Siliconix

威世威世科技公司

MBR2045CTPBF

Schottky Rectifier, 2 x 10 A

文件:162.95 Kbytes Page:7 Pages

VISHAYVishay Siliconix

威世威世科技公司

MBR2045CTPBF

Schottky Rectifier, 2 x 10 A

文件:136.85 Kbytes Page:6 Pages

VISHAYVishay Siliconix

威世威世科技公司

SWITCHMODE?? Power Rectifiers

SWITCHMODE™ Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temperature • Guaranteed Reverse Avalanche • E

MOTOROLA

摩托罗拉

UHF power LDMOS transistor

DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT467C) with a ceramic cap. The common source is connected to the mounting flange. FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on underside el

PHILIPS

飞利浦

UHF power transistor

DESCRIPTION NPN silicon planar UHF power transistor in a 2-lead SOT390A flange package with a ceramic cap. The emitter is connected to the flange. FEATURES • Emitter ballasting resistors for optimum temperature profile • Gold metallization ensures excellent reliability • Internal input and ou

PHILIPS

飞利浦

SWITCHMODE??Schottky Power Rectifirer

SCHOTTKY BARRIER RECTIFIER 20 AMPERES 45 VOLTS The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use

MOTOROLA

摩托罗拉

SCHOTTKY BARRIER RECTIFIERS(20A,30-45V)

SWITCHMODE POWER RECTIFIERS D PAK SURFACE MOUNT POWER PACKAGE The D PAK Power rectifier employs the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art devices have the following features: * Low Forward Voltage * Low Switching noise * High Surge Capacity * Guara

MOSPEC

统懋

MBR2045CTPBF产品属性

  • 类型

    描述

  • 型号

    MBR2045CTPBF

  • 功能描述

    DIODE SCHOTTKY 45V 10A TO220AB

  • RoHS

  • 类别

    分离式半导体产品 >> 二极管,整流器 - 阵列

  • 系列

    -

  • 其它有关文件

    STTH10LCD06C View All Specifications

  • 标准包装

    1,000

  • 系列

    - 电压 - 在 If

  • 时为正向(Vf)(最大)

    2V @ 5A 电流 - 在 Vr

  • 时反向漏电

    1µA @ 600V 电流 -

  • 平均整流(Io)(每个二极管)

    5A 电压

  • -(Vr)(最大)

    600V

  • 反向恢复时间(trr)

    50ns

  • 二极管类型

    标准

  • 速度

    快速恢复 = 200mA(Io)

  • 二极管配置

    1 对共阴极

  • 安装类型

    表面贴装

  • 封装/外壳

    TO-263-3,D²Pak(2 引线+接片),TO-263AB

  • 供应商设备封装

    D2PAK

  • 包装

    带卷(TR)

  • 产品目录页面

    1553(CN2011-ZH PDF)

  • 其它名称

    497-10107-2

更新时间:2026-8-3 18:11:00
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IR
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