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型号 功能描述 生产厂家 企业 LOGO 操作
MBR2045CD

40 to 200 Volts Forward Current - 20.0 Amperes

FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-0. Flame Retardant Epoxy Molding Compound. • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency. • High current capability • For use in low voltage, high frequen

CHENDA

辰达半导体

MBR2045CD

20 AMPERES SCHOTTKY BARRIER RECTIFIERS

FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-0. Flame Retardant Epoxy Molding Compound. • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency. • High current capability • For use in low voltage, high frequen

DYELEC

迪一电子

MBR2045CD

肖特基二极管

DOWOSEMI

东沃电子

MBR2045CD

20.0A Standard Forward Voltage Schottky Barrier Rectifeirers

H-BRIGHT

MBR2045CD

肖特基二极管

YJYCOIN

益嘉源

SWITCHMODE?? Power Rectifiers

SWITCHMODE™ Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temperature • Guaranteed Reverse Avalanche • E

MOTOROLA

摩托罗拉

UHF power LDMOS transistor

DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT467C) with a ceramic cap. The common source is connected to the mounting flange. FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on underside el

PHILIPS

飞利浦

UHF power transistor

DESCRIPTION NPN silicon planar UHF power transistor in a 2-lead SOT390A flange package with a ceramic cap. The emitter is connected to the flange. FEATURES • Emitter ballasting resistors for optimum temperature profile • Gold metallization ensures excellent reliability • Internal input and ou

PHILIPS

飞利浦

SWITCHMODE??Schottky Power Rectifirer

SCHOTTKY BARRIER RECTIFIER 20 AMPERES 45 VOLTS The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use

MOTOROLA

摩托罗拉

SCHOTTKY BARRIER RECTIFIERS(20A,30-45V)

SWITCHMODE POWER RECTIFIERS D PAK SURFACE MOUNT POWER PACKAGE The D PAK Power rectifier employs the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art devices have the following features: * Low Forward Voltage * Low Switching noise * High Surge Capacity * Guara

MOSPEC

统懋

MBR2045CD产品属性

  • 类型

    描述

  • VRM_Max (V):

    45

  • Io_Max(A):

    20

  • IFSM_Max(A):

    130

  • Rated lo(A):

    20

  • VF_Max(V):

    0.63

  • IR@25℃IR(uA):

    0.2

  • IR@125℃IR(uA):

    100

  • Tj(℃):

    -55~+175

  • Status:

    Active

更新时间:2026-7-23 18:14:00
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