MBR20060CT价格
参考价格：￥270.7586
型号：MBR20060CT 品牌：GeneSiC 备注：这里有MBR20060CT多少钱，2026年最近7天走势，今日出价，今日竞价，MBR20060CT批发/采购报价，MBR20060CT行情走势销售排行榜，MBR20060CT报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MBR20060CT | 200 Amp Rectifier 20 to 100 Volts Schottky Barrier Features · Metal of siliconrectifier, majonty carrier conducton · Guard ring for transient protection · Low power loss high efficiency · High surge capacity, High current capability | MCC |   | |
MBR20060CT | SCHOTTKY DIODES MODULE TYPE 200A 200Amp Rectifier 20-100 Volts Features High Surge Capability Types Up to 100V VRRM | TEL | | |
MBR20060CT | Silicon Schottky Diode, 200A Features • Guard Ring Protection • Low forward voltage drop • High surge current capability • Up to 100V VRRM | NAINA | | |
MBR20060CT | 200 Amp Schottky Barrier Rectifier 20 to 100 Volts 200 Amp Schottky Barrier Rectifier 20 to 100 Volts | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
MBR20060CT | 封装/外壳：双塔架 包装：散装 描述：DIODE MODULE 60V 200A 2TOWER 分立半导体产品 二极管 - 整流器 - 阵列 | GENESIC | | |
MBR20060CT | Silicon Power Schottky Diode 文件：712.33 Kbytes Page：3 Pages | GENESIC | | |
MBR20060CT | Schottky Rectifiers | NAVITAS 纳微半导体 | | |
MBR20060CT | HIGH POWER -SCHOTTKY RECTIFIERS 文件：446.88 Kbytes Page：2 Pages | AMERICASEMI | | |
MBR20060CT | Schottky PowerMod 文件：123.24 Kbytes Page：2 Pages | MICROSEMI 美高森美 | | |
SCHOTTKY DIODES MODULE TYPE 200A 200Amp Rectifier 20-100 Volts Features High Surge Capability Types Up to 100V VRRM | TEL | | ||
HIGH POWER -SCHOTTKY RECTIFIERS 文件：446.88 Kbytes Page：2 Pages | AMERICASEMI | | ||
Schottky Rectifiers | NAVITAS 纳微半导体 | | ||
Silicon Power Schottky Diode 文件：712.33 Kbytes Page：3 Pages | GENESIC | | ||
封装/外壳：双塔架 包装：散装 描述：DIODE MODULE 60V 200A 2TOWER 分立半导体产品 二极管 - 整流器 - 阵列 | GENESIC | | ||
Fast Recovery Diode FEATURES ■ Double Side Cooling ■ High Surge Capability ■ Low Recovery Charge APPLICATIONS ■ Inverters ■ Choppers ■ Inverse Parallel Diode ■ Freewheel Diode | DYNEX | | ||
SCHOTTKY BARRIER RECTIFIERS 200 AMPERES 45 to 60 VOLTS POWERTAP II SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Dual Diode Construction — May Be Paralleled for Higher Current Output • Guardring for Stress Protection • Low Forward | MOTOROLA 摩托罗拉 | | ||
SCHOTTKY BARRIER RECTIFIERS 200 AMPERES 45 to 60 VOLTS POWERTAP II SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Dual Diode Construction — May Be Paralleled for Higher Current Output • Guardring for Stress Protection • Low Forward | MOTOROLA 摩托罗拉 | | ||
RF POWER BROADBAND NPN BIPOLAR 文件：109.9 Kbytes Page：10 Pages | MOTOROLA 摩托罗拉 | | ||
RF POWER BROADBAND NPN BIPOLAR 文件：109.9 Kbytes Page：10 Pages | MOTOROLA 摩托罗拉 | |
MBR20060CT产品属性
- 类型
描述
- Io@Tj(A)：
200
- IFSM(A)：
1500
- IR@Tj(mA)：
20
- Designation：
Twin-Tower
- Type：
Module
- Compliance：
' ''>
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MOTOROLA |
专业模块 |
MODULE |
8513 |
模块原装主营-可开原型号增税票 |
|||
MOTOROLA |
23+ |
模块 |
320 |
全新原装正品,量大可订货!可开17%增值票!价格优势! |
|||
原厂 |
2023+ |
模块 |
600 |
专营模块,继电器,公司原装现货 |
|||
MOTOROLA |
24+ |
2173 |
公司大量全新正品 随时可以发货 |
||||
GeneSiC Semiconductor |
24+ |
DO/TO |
986 |
碳化硅二极管原厂正品全系列现货 |
|||
IXFN |
23+ |
标准封装 |
5000 |
原厂授权一级代理 IGBT模块 可控硅 晶闸管 熔断器质保 |
|||
GeneSiC Semiconductor |
22+ |
Twin Tower |
9000 |
原厂渠道,现货配单 |
|||
MOTOROLA/摩托罗拉 |
23+ |
module |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
26+ |
N/A |
75000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
GeneSiC |
25+ |
电联咨询 |
7800 |
公司现货,提供拆样技术支持 |
MBR20060CT规格书下载地址
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