200 Amp Rectifier 20 to 100 Volts Schottky Barrier

Features · Metal of siliconrectifier, majonty carrier conducton · Guard ring for transient protection · Low power loss high efficiency · High surge capacity, High current capability

SCHOTTKY DIODES MODULE TYPE 200A

200Amp Rectifier 20-100 Volts Features High Surge Capability Types Up to 100V VRRM

Silicon Schottky Diode, 200A

Features • Guard Ring Protection • Low forward voltage drop • High surge current capability • Up to 100V VRRM

HIGH POWER-SCHOTTKY RECTIFIERS

Features • High Surge Capability • Types Up to 100V VRRM

200 Amp Schottky Barrier Rectifier 20 to 100 Volts

200 Amp Schottky Barrier Rectifier 20 to 100 Volts

封装/外壳：双塔架 包装：散装 描述：DIODE MODULE 30V 200A 2TOWER 分立半导体产品 二极管 - 整流器 - 阵列

Schottky Rectifiers

Silicon Power Schottky Diode

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Schottky PowerMod

文件：123.49 Kbytes Page：2 Pages

SCHOTTKY DIODES MODULE TYPE 200A

200Amp Rectifier 20-100 Volts Features High Surge Capability Types Up to 100V VRRM

HIGH POWER-SCHOTTKY RECTIFIERS

Features • High Surge Capability • Types Up to 100V VRRM

Silicon Power Schottky Diode

文件：542.18 Kbytes Page：3 Pages

Schottky Rectifiers

封装/外壳：双塔架 包装：散装 描述：DIODE MODULE 30V 200A 2TOWER 分立半导体产品 二极管 - 整流器 - 阵列

RF POWER TRANSISTORS Ldmos Enhanced Technology

DESCRIPTION The LET20030C is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 2.0 GHz. The LET20030C is designed for high gain and broadband performance operating in common source

RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package

DESCRIPTION The LET20030S is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 26 V in common source mode at frequencies up to 2 GHz. LET20030S boasts the excellent

POWERTAPP?줚I SWITCHMODE??Power Rectifirer

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RF POWER TRANSISTOR

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