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MBR150价格

参考价格：￥0.5014

型号：MBR150G 品牌：ON 备注：这里有MBR150多少钱，2025年最近7天走势，今日出价，今日竞价，MBR150批发/采购报价，MBR150行情走势销售排行榜，MBR150报价。

型号	功能描述	生产厂家企业	LOGO
MBR150	Axial Lead Rectifiers The MBR150/160 series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free	ONSEMI 安森美半导体	ONSEMI
MBR150	Schottky Rectifier, 1 A DESCRIPTION The VS-MBR... axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. FEATURES • Low profile, axial lea	VishayVishay Siliconix 威世威世科技公司	Vishay
MBR150	Axial Lead Rectifiers Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage, high–frequency invert	Motorola 摩托罗拉	Motorola
MBR150	1.0A Axial Leaded Schottky Barrier Rectifier Diodes Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● High Current Capability ● Low Power Loss, High Efficiency ● High Surge Current Capability ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications	SUNMATE 森美特	SUNMATE
MBR150	SCHOTTKY BARRIER RECTIFIER DIODES FEATURES : * High current capability * High surge current capability * High reliability * High efficiency * Low power loss * Low forward voltage drop * Pb / RoHS Free	SYNSEMI	SYNSEMI
MBR150	1A SCHOTTKY RECTIFIER 1A SCHOTTKY RECTIFIER	DIGITRON	DIGITRON
MBR150	1.0A SCHOTTKY BARRIER DIODE Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● High Current Capability ● Low Power Loss, High Efficiency ● High Surge Current Capability ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications	ZSELEC 淄博圣诺	ZSELEC
MBR150	Low Reverse Current Features • Low Reverse Current • Low Stored Charge. Majority Carrier Conduction • Low Power Loss/High Efficiency • Highly Stable Oxide Passivated Junction	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
MBR150	SCHOTTKY BARRIER RECTIFIERS VOLTAGE 40 to 200 Volts CURRENT 1.0 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • For use in low voltage,high frequenc	PANJIT 強茂	PANJIT
MBR150	封装/外壳：DO-204AL，DO-41，轴向包装：散装描述：DIODE SCHOTTKY 50V 1A AXIAL 分立半导体产品二极管 - 整流器 - 单	ONSEMI 安森美半导体	ONSEMI
MBR150	Planar Schottky Diode	UTC 友顺	UTC
MBR150	1.0 A, 50 V, Schottky Barrier Rectifier	ONSEMI 安森美半导体	ONSEMI
MBR150	Schottky Rectifier, 1 A 文件：120.8 Kbytes Page：6 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
MBR15005	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	Good-Ark 固锝电子	Good-Ark
MBR15005	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	HY 虹扬科技	HY
MBR15005	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	HY 虹扬科技	HY
MBR15005	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	HY 虹扬科技	HY
MBR15005W	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	HY 虹扬科技	HY
MBR1501	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	Good-Ark 固锝电子	Good-Ark
MBR1501	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	HY 虹扬科技	HY
MBR1501	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	HY 虹扬科技	HY
MBR1502	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	HY 虹扬科技	HY
MBR1502	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	HY 虹扬科技	HY
MBR1502	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	Good-Ark 固锝电子	Good-Ark
MBR1504	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	Good-Ark 固锝电子	Good-Ark
MBR1504	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	HY 虹扬科技	HY
MBR1504	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	HY 虹扬科技	HY
MBR1505	TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER FEATURES * Plastic case with heatsink for Maximum Heat Dissipation * Diffused Junction * High current capability * Surge overload ratings - 300 Amperes * Low forward voltage drop * High Reliability	DCCOM 道全	DCCOM
MBR1505W	TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER FEATURES * Plastic case with heatsink for Maximum Heat Dissipation * Diffused Junction * High Reliability * Surge overload ratings - 300 Amperes * Low forward voltage drop * High current capability	DCCOM 道全	DCCOM
MBR1506	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	HY 虹扬科技	HY
MBR1506	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	HY 虹扬科技	HY
MBR1506	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	Good-Ark 固锝电子	Good-Ark
MBR1508	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	Good-Ark 固锝电子	Good-Ark
MBR1508	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	HY 虹扬科技	HY
MBR1508	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	HY 虹扬科技	HY
MBR150E	SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE 20V TO 200V FORWARD CURRENT 1.0A DESCRIPTION The MBR120E~MBR1200E is available in SOD-323HE Package FEATURES  Plastic package has Underwriters Laboratory Flammability Classification 94V 0  Low power loss, high efficiency  For use in low voltage high frequency inverters, free wheeling, and polarity protection appl	AITSEMI 创瑞科技	AITSEMI
MBR150F	Schottky Diodes ■ Features ● Low power loss,high efficiency ● High forward surge current capability ● The plastic package carries Underwriters Laboratory Flammability Classification 94V-0	KEXIN 科信电子	KEXIN
MBR150G	Axial Lead Rectifiers The MBR150/160 series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free	ONSEMI 安森美半导体	ONSEMI
MBR150RL	Axial Lead Rectifiers The MBR150/160 series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free	ONSEMI 安森美半导体	ONSEMI
MBR150RLG	Axial Lead Rectifiers The MBR150/160 series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free	ONSEMI 安森美半导体	ONSEMI
MBR150TR	Schottky Rectifier, 1 A DESCRIPTION The VS-MBR... axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. FEATURES • Low profile, axial lea	VishayVishay Siliconix 威世威世科技公司	Vishay
MBR150_12	Schottky Rectifier, 1 A 文件：120.8 Kbytes Page：6 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
MBR15005	Silicon Bridge Rectifiers 文件：358.52 Kbytes Page：3 Pages	HY 虹扬科技	HY
MBR15005_V01	Silicon Bridge Rectifiers 文件：358.52 Kbytes Page：3 Pages	HY 虹扬科技	HY
MBR15005W	Silicon Bridge Rectifiers 文件：352.8 Kbytes Page：3 Pages	HY 虹扬科技	HY
MBR15005W_V01	Silicon Bridge Rectifiers 文件：352.8 Kbytes Page：3 Pages	HY 虹扬科技	HY
MBR1501	Silicon Bridge Rectifiers 文件：358.52 Kbytes Page：3 Pages	HY 虹扬科技	HY
MBR1501W	Silicon Bridge Rectifiers 文件：352.8 Kbytes Page：3 Pages	HY 虹扬科技	HY
MBR1502	Silicon Bridge Rectifiers 文件：358.52 Kbytes Page：3 Pages	HY 虹扬科技	HY
MBR1502W	Silicon Bridge Rectifiers 文件：352.8 Kbytes Page：3 Pages	HY 虹扬科技	HY
MBR1504	Silicon Bridge Rectifiers 文件：358.52 Kbytes Page：3 Pages	HY 虹扬科技	HY
MBR1504	桥式整流器	HY 虹扬科技	HY
MBR1504W	Silicon Bridge Rectifiers 文件：352.8 Kbytes Page：3 Pages	HY 虹扬科技	HY
MBR1506	Silicon Bridge Rectifiers 文件：358.52 Kbytes Page：3 Pages	HY 虹扬科技	HY
MBR1506W	Silicon Bridge Rectifiers 文件：352.8 Kbytes Page：3 Pages	HY 虹扬科技	HY
MBR1508	Silicon Bridge Rectifiers 文件：358.52 Kbytes Page：3 Pages	HY 虹扬科技	HY
MBR1508W	Silicon Bridge Rectifiers 文件：352.8 Kbytes Page：3 Pages	HY 虹扬科技	HY
MBR150-M3	Schottky Rectifier, 1 A 文件：120.8 Kbytes Page：6 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
MBR150RL	封装/外壳：DO-204AL，DO-41，轴向包装：卷带（TR）描述：DIODE SCHOTTKY 50V 1A AXIAL 分立半导体产品二极管 - 整流器 - 单	ONSEMI 安森美半导体	ONSEMI
MBR150TR	Schottky Rectifier, 1 A 文件：120.8 Kbytes Page：6 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay

MBR150产品属性

类型
描述
型号
MBR150
功能描述
肖特基二极管与整流器 1A 50V
RoHS
否
制造商
Skyworks Solutions, Inc.
产品
Schottky Diodes
峰值反向电压
2 V
正向连续电流
50 mA
配置
Crossover Quad
正向电压下降
370 mV
最大功率耗散
75 mW
工作温度范围
- 65 C to + 150 C
安装风格
SMD/SMT
封装/箱体
SOT-143
封装
Reel

MBR150供应商更多...

更新时间：2025-12-25 17:51:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市赛美科科技有限公司	MBR150RL	MOTOROLA		NA	8560	一级代理原装正品假一罚十价格优势长期供货	询价
深圳市高捷芯城科技有限公司	MBR150RLG	onsemi(安森美)	24+	DO41	7350	现货供应,当天可交货!免费送样,原厂技术支持!!!	询价
标准国际(香港)有限公司	MBR150	MBR150	25+	1205	1205		询价
中天科工半导体（深圳）有限公司	MBR150	VISHAY	20+	na	65790	原装优势主营型号-可开原型号增税票	询价
深圳市力拓辉电子有限公司	MBR150	ON	21+	DO-41	850000	全新原装鄙视假货	询价
深圳市明嘉莱科技有限公司	MBR150RL	MOTOROLA/摩托罗拉	25+	NA	880000	明嘉莱只做原装正品现货	询价
深圳市凯睿晟科技有限公司	MBR150	ON/安森美	21+	DO-41	30000	百域芯优势实单必成可开13点增值税	询价
深圳市科恒伟业电子有限公司	MBR150G	ON/安森美	2450+		8540	只做原装正品假一赔十为客户做到零风险!!	询价
深圳市华斯顿科技有限公司	MBR150	VISHAYMAS	25+23+	DO-41	25171	绝对原装正品现货,全新深圳原装进口现货	询价
深圳市中联芯电子有限公司	MBR150RLG	ONSEMI/安森美	24+	DO-41	7800	全新原厂原装正品现货,低价出售,实单可谈	询价

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MBR150价格

MBR150产品属性

MBR150供应商更多...

MBR150芯片相关品牌

MBR150规格书下载地址

MBR150参数引脚图相关

MBR150数据表相关新闻

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MBR120LSFT1GMBR120LSF丝印：B3SOD-123贴片肖特基全新现

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