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MBR150价格

参考价格：￥0.5014

型号：MBR150G 品牌：ON 备注：这里有MBR150多少钱，2025年最近7天走势，今日出价，今日竞价，MBR150批发/采购报价，MBR150行情走势销售排行榜，MBR150报价。

型号	功能描述	生产厂家&企业
MBR150	Axial Lead Rectifiers Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage, high–frequency invert	MotorolaMotorola, Inc 摩托罗拉加尔文制造公司
MBR150	Axial Lead Rectifiers The MBR150/160 series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free	ONSEMION Semiconductor 安森美半导体安森美半导体公司
MBR150	Schottky Rectifier, 1 A DESCRIPTION The VS-MBR... axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. FEATURES • Low profile, axial lea	VishayVishay Siliconix 威世科技威世科技半导体
MBR150	SCHOTTKY BARRIER RECTIFIER DIODES FEATURES : * High current capability * High surge current capability * High reliability * High efficiency * Low power loss * Low forward voltage drop * Pb / RoHS Free	SYNSEMI SynSemi，Inc.
MBR150	SCHOTTKY BARRIER RECTIFIERS VOLTAGE 40 to 200 Volts CURRENT 1.0 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • For use in low voltage,high frequenc	PANJITPan Jit International Inc. 強茂強茂股份有限公司
MBR150	1.0A SCHOTTKY BARRIER DIODE Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● High Current Capability ● Low Power Loss, High Efficiency ● High Surge Current Capability ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications	ZSELECZibo Seno Electronic Engineering Co.,Ltd 淄博圣诺电子淄博圣诺电子工程有限公司
MBR150	1.0A Axial Leaded Schottky Barrier Rectifier Diodes Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● High Current Capability ● Low Power Loss, High Efficiency ● High Surge Current Capability ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications	SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司
MBR150	1A SCHOTTKY RECTIFIER 1A SCHOTTKY RECTIFIER	DIGITRON Digitron Semiconductors
MBR150	Low Reverse Current Features • Low Reverse Current • Low Stored Charge. Majority Carrier Conduction • Low Power Loss/High Efficiency • Highly Stable Oxide Passivated Junction	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司
MBR150	封装/外壳：DO-204AL，DO-41，轴向包装：散装描述：DIODE SCHOTTKY 50V 1A AXIAL 分立半导体产品二极管 - 整流器 - 单	ONSEMION Semiconductor 安森美半导体安森美半导体公司
MBR150	Schottky Rectifier, 1 A 文件：120.8 Kbytes Page：6 Pages	VishayVishay Siliconix 威世科技威世科技半导体
MBR15005	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	HY HY ELECTRONIC CORP.
MBR15005	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	Good-Ark GOOD-ARK Electronics
MBR15005	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	HY HY ELECTRONIC CORP.
MBR15005	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	HY HY ELECTRONIC CORP.
MBR15005W	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	HY HY ELECTRONIC CORP.
MBR1501	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	HY HY ELECTRONIC CORP.
MBR1501	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	Good-Ark GOOD-ARK Electronics
MBR1501	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	HY HY ELECTRONIC CORP.
MBR1502	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	HY HY ELECTRONIC CORP.
MBR1502	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	HY HY ELECTRONIC CORP.
MBR1502	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	Good-Ark GOOD-ARK Electronics
MBR1504	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	Good-Ark GOOD-ARK Electronics
MBR1504	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	HY HY ELECTRONIC CORP.
MBR1504	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	HY HY ELECTRONIC CORP.
MBR1505	TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER FEATURES * Plastic case with heatsink for Maximum Heat Dissipation * Diffused Junction * High current capability * Surge overload ratings - 300 Amperes * Low forward voltage drop * High Reliability	DCCOM Dc Components
MBR1505W	TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER FEATURES * Plastic case with heatsink for Maximum Heat Dissipation * Diffused Junction * High Reliability * Surge overload ratings - 300 Amperes * Low forward voltage drop * High current capability	DCCOM Dc Components
MBR1506	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	HY HY ELECTRONIC CORP.
MBR1506	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	HY HY ELECTRONIC CORP.
MBR1506	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	Good-Ark GOOD-ARK Electronics
MBR1508	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	Good-Ark GOOD-ARK Electronics
MBR1508	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	HY HY ELECTRONIC CORP.
MBR1508	SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition	HY HY ELECTRONIC CORP.
MBR150E	SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE 20V TO 200V FORWARD CURRENT 1.0A DESCRIPTION The MBR120E~MBR1200E is available in SOD-323HE Package FEATURES  Plastic package has Underwriters Laboratory Flammability Classification 94V 0  Low power loss, high efficiency  For use in low voltage high frequency inverters, free wheeling, and polarity protection appl	AITSEMIAiT Semiconductor Inc. 创瑞科技AiT创瑞科技
MBR150F	Schottky Diodes ■ Features ● Low power loss,high efficiency ● High forward surge current capability ● The plastic package carries Underwriters Laboratory Flammability Classification 94V-0	KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司
MBR150G	Axial Lead Rectifiers The MBR150/160 series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free	ONSEMION Semiconductor 安森美半导体安森美半导体公司
MBR150RL	Axial Lead Rectifiers The MBR150/160 series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free	ONSEMION Semiconductor 安森美半导体安森美半导体公司
MBR150RLG	Axial Lead Rectifiers The MBR150/160 series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free	ONSEMION Semiconductor 安森美半导体安森美半导体公司
MBR150TR	Schottky Rectifier, 1 A DESCRIPTION The VS-MBR... axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. FEATURES • Low profile, axial lea	VishayVishay Siliconix 威世科技威世科技半导体
MBR150_12	Schottky Rectifier, 1 A 文件：120.8 Kbytes Page：6 Pages	VishayVishay Siliconix 威世科技威世科技半导体
MBR15005	Silicon Bridge Rectifiers 文件：358.52 Kbytes Page：3 Pages	HY HY ELECTRONIC CORP.
MBR15005_V01	Silicon Bridge Rectifiers 文件：358.52 Kbytes Page：3 Pages	HY HY ELECTRONIC CORP.
MBR15005W	Silicon Bridge Rectifiers 文件：352.8 Kbytes Page：3 Pages	HY HY ELECTRONIC CORP.
MBR15005W_V01	Silicon Bridge Rectifiers 文件：352.8 Kbytes Page：3 Pages	HY HY ELECTRONIC CORP.
MBR1501	Silicon Bridge Rectifiers 文件：358.52 Kbytes Page：3 Pages	HY HY ELECTRONIC CORP.
MBR1501W	Silicon Bridge Rectifiers 文件：352.8 Kbytes Page：3 Pages	HY HY ELECTRONIC CORP.
MBR1502	Silicon Bridge Rectifiers 文件：358.52 Kbytes Page：3 Pages	HY HY ELECTRONIC CORP.
MBR1502W	Silicon Bridge Rectifiers 文件：352.8 Kbytes Page：3 Pages	HY HY ELECTRONIC CORP.
MBR1504	Silicon Bridge Rectifiers 文件：358.52 Kbytes Page：3 Pages	HY HY ELECTRONIC CORP.
MBR1504W	Silicon Bridge Rectifiers 文件：352.8 Kbytes Page：3 Pages	HY HY ELECTRONIC CORP.
MBR1506	Silicon Bridge Rectifiers 文件：358.52 Kbytes Page：3 Pages	HY HY ELECTRONIC CORP.
MBR1506W	Silicon Bridge Rectifiers 文件：352.8 Kbytes Page：3 Pages	HY HY ELECTRONIC CORP.
MBR1508	Silicon Bridge Rectifiers 文件：358.52 Kbytes Page：3 Pages	HY HY ELECTRONIC CORP.
MBR1508W	Silicon Bridge Rectifiers 文件：352.8 Kbytes Page：3 Pages	HY HY ELECTRONIC CORP.
MBR150-M3	Schottky Rectifier, 1 A 文件：120.8 Kbytes Page：6 Pages	VishayVishay Siliconix 威世科技威世科技半导体
MBR150RL	封装/外壳：DO-204AL，DO-41，轴向包装：卷带（TR）描述：DIODE SCHOTTKY 50V 1A AXIAL 分立半导体产品二极管 - 整流器 - 单	ONSEMION Semiconductor 安森美半导体安森美半导体公司
MBR150TR	Schottky Rectifier, 1 A 文件：120.8 Kbytes Page：6 Pages	VishayVishay Siliconix 威世科技威世科技半导体
MBR150TR-M3	Schottky Rectifier, 1 A 文件：120.8 Kbytes Page：6 Pages	VishayVishay Siliconix 威世科技威世科技半导体
150	SHIELDED SMT POWER INDUCTORS ● FEATURE Various high power inductor are Superior to be high saturation for surface mounting ● APPLICATIONS 2 DC/DC converter power supply, Telecommunication equipment	PRODUCTWELL Productwell Precision Elect.CO.,LTD
150	Limiting continuous current 130A at 85째C 文件：563.76 Kbytes Page：3 Pages	TECTE Connectivity Ltd 泰科电子泰科电子有限公司

MBR150产品属性

类型
描述
型号
MBR150
功能描述
肖特基二极管与整流器 1A 50V
RoHS
否
制造商
Skyworks Solutions, Inc.
产品
Schottky Diodes
峰值反向电压
2 V
正向连续电流
50 mA
配置
Crossover Quad
正向电压下降
370 mV
最大功率耗散
75 mW
工作温度范围
- 65 C to + 150 C
安装风格
SMD/SMT
封装/箱体
SOT-143
封装
Reel

MBR150供应商更多...

更新时间：2025-8-5 12:37:00

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