SCHOTTKY DIODES MODULE TYPE 120A

Features High Surge Capability Types Up to 100V VRRM

Silicon Power Schottky Diode

Features • High Surge Capability • Types from 45 V to 100 V VRRM • Not ESD Sensitive

Silicon Schottky Diode, 120A

Features • Guard Ring Protection • Low forward voltage drop • High surge current capability • Up to 100V VRRM

HIGH POWER -SCHOTTKY RECTIFIERS

Features • High Surge Capability • Types up to 100 V VRRM

Silicon Power Schottky Diode

文件：723.92 Kbytes Page：3 Pages

封装/外壳：双塔架 包装：散装 描述：DIODE MODULE 80V 120A 2TOWER 分立半导体产品 二极管 - 整流器 - 阵列

Schottky PowerMod

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Schottky Rectifiers

HIGH POWER -SCHOTTKY RECTIFIERS

Features • High Surge Capability • Types up to 100 V VRRM

SCHOTTKY DIODES MODULE TYPE 120A

Features High Surge Capability Types Up to 100V VRRM

Silicon Power Schottky Diode

Features • High Surge Capability • Types from 45 V to 100 V VRRM • Not ESD Sensitive

封装/外壳：双塔架 包装：散装 描述：DIODE MODULE 80V 120A 2TOWER 分立半导体产品 二极管 - 整流器 - 阵列

Silicon Power Schottky Diode

文件：723.92 Kbytes Page：3 Pages

Schottky Rectifiers

120 Amp Rectifier 20 to 100 Volts Schottky Barrier

Features · Metal of siliconrectifier, majonty carrier conducton · Guard ring for transient protection · Low power loss high efficiency · High surge capacity, High current capability

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching

120 Amp Rectifier 20 to 100 Volts Schottky Barrier

Features • Metal of siliconrectifier, majonty carrier conducton • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability

1.1 GHz Prescaler High Frequency Input Signal

Description The MC12080 is a single modulus divide by 10, 20, 40, 80 prescaler for low power frequency division of a 1.1 GHz high frequency input signal. Divide ratio control inputs SW1, SW2 and SW3 select the required divide ratio of ÷10, ÷20, ÷40, or ÷80. Features •1.1 GHz Toggle Freq

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs

文件：205.71 Kbytes Page：4 Pages