120 Amp Rectifier 20 to 100 Volts Schottky Barrier

Features · Metal of siliconrectifier, majonty carrier conducton · Guard ring for transient protection · Low power loss high efficiency · High surge capacity, High current capability

SCHOTTKY DIODES MODULE TYPE 120A

Features High Surge Capability Types Up to 100V VRRM

120 Amp Schottky Rectifier

文件：117.81 Kbytes Page：2 Pages

Silicon Power Schottky Diode

Features • High Surge Capability • Types from 45 V to 100 V VRRM • Not ESD Sensitive

Silicon Schottky Diode, 120A

Features • Guard Ring Protection • Low forward voltage drop • High surge current capability • Up to 100V VRRM

HIGH POWER -SCHOTTKY RECTIFIERS

Features • High Surge Capability • Types up to 100 V VRRM

SCHOTTKY DIODES MODULE TYPE 120A

Features High Surge Capability Types Up to 100V VRRM

SCHOTTKY DIODES MODULE TYPE 120A

Features High Surge Capability Types Up to 100V VRRM

Silicon Power Schottky Diode

Features • High Surge Capability • Types from 45 V to 100 V VRRM • Not ESD Sensitive

HIGH POWER -SCHOTTKY RECTIFIERS

Features • High Surge Capability • Types up to 100 V VRRM

SCHOTTKY DIODES MODULE TYPE 120A

Features High Surge Capability Types Up to 100V VRRM

Silicon Power Schottky Diode

文件：723.92 Kbytes Page：3 Pages

Schottky PowerMod

文件：123.26 Kbytes Page：2 Pages

封装/外壳：双塔架 包装：散装 描述：DIODE MODULE 80V 120A 2TOWER 分立半导体产品 二极管 - 整流器 - 阵列

Schottky Rectifiers

Schottky Rectifiers

Silicon Power Schottky Diode

文件：723.92 Kbytes Page：3 Pages

封装/外壳：双塔架 包装：散装 描述：DIODE MODULE 80V 120A 2TOWER 分立半导体产品 二极管 - 整流器 - 阵列

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching

120 Amp Rectifier 20 to 100 Volts Schottky Barrier

Features • Metal of siliconrectifier, majonty carrier conducton • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability

1.1 GHz Prescaler High Frequency Input Signal

Description The MC12080 is a single modulus divide by 10, 20, 40, 80 prescaler for low power frequency division of a 1.1 GHz high frequency input signal. Divide ratio control inputs SW1, SW2 and SW3 select the required divide ratio of ÷10, ÷20, ÷40, or ÷80. Features •1.1 GHz Toggle Freq

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs

文件：205.71 Kbytes Page：4 Pages