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MBR12040CT

Silicon Schottky Diode, 120A

Features • Guard Ring Protection • Low forward voltage drop • High surge current capability • Up to 100V VRRM

NAINA

MBR12040CT

Silicon Power Schottky Diode

Features • High Surge Capability • Types from 20 V to 40 V VRRM • Not ESD Sensitive

GENESIC

MBR12040CT

SCHOTTKY DIODES MODULE TYPE 120A

Features High Surge Capability Types Up to 100V VRRM

TEL

MBR12040CT

封装/外壳:双塔架 包装:散装 描述:DIODE MODULE 40V 120A 2TOWER 分立半导体产品 二极管 - 整流器 - 阵列

GENESIC

MBR12040CT

Silicon Power Schottky Diode

文件:723.57 Kbytes Page:3 Pages

GENESIC

MBR12040CT

HIGH POWER-SCHOTTKY RECTIFIERS

文件:442.02 Kbytes Page:2 Pages

AMERICASEMI

MBR12040CT

Schottky PowerMod

文件:123.64 Kbytes Page:2 Pages

MICROSEMI

美高森美

MBR12040CT

Schottky Rectifiers

NAVITAS

纳微半导体

Silicon Power Schottky Diode

Features • High Surge Capability • Types from 20 V to 40 V VRRM • Not ESD Sensitive

GENESIC

SCHOTTKY DIODES MODULE TYPE 120A

Features High Surge Capability Types Up to 100V VRRM

TEL

封装/外壳:双塔架 包装:散装 描述:DIODE MODULE 40V 120A 2TOWER 分立半导体产品 二极管 - 整流器 - 阵列

GENESIC

HIGH POWER-SCHOTTKY RECTIFIERS

文件:442.02 Kbytes Page:2 Pages

AMERICASEMI

Silicon Power Schottky Diode

文件:723.57 Kbytes Page:3 Pages

GENESIC

Schottky Rectifiers

NAVITAS

纳微半导体

120 Amp Rectifier 20 to 100 Volts Schottky Barrier

Features · Metal of siliconrectifier, majonty carrier conducton · Guard ring for transient protection · Low power loss high efficiency · High surge capacity, High current capability

MCC

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

POWER MOS 7™ Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TMby significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along wit

ADPOW

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs

POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast

ADPOW

Schottky PowerMod

Schottky PowerMod ● Schottky Barrier Rectifier ● Guard Ring Protection ● 120 Amperes/35 to 50 Volts ● 175°C Junction Temperature ● Reverse Energy Tested ● ROHS Compliant

MICROSEMI

美高森美

120 Amp Rectifier 20 to 100 Volts Schottky Barrier

Features • Metal of siliconrectifier, majonty carrier conducton • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability

MCC

MBR12040CT产品属性

  • 类型

    描述

  • Io@Tj(A):

    120

  • IFSM(A):

    800

  • IR@Tj(mA):

    20

  • Designation:

    Twin-Tower

  • Type:

    Module

  • Compliance:

    ' ''>

更新时间:2026-5-19 9:58:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON/安森美
23+
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9000
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ON/安森美
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20000
公司只有原装 品质保障
MOTOROLA
24+
MODULE
2050
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有有主力推
23+
TO-220F
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
MCC
SOD-123
15500
一级代理 原装正品假一罚十价格优势长期供货
GeneSiC
25+
电联咨询
7800
公司现货,提供拆样技术支持
MCC/美微科
25+
SOD123
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价格从优 欢迎来电咨询
M
05+
原厂原装
8057
只做全新原装真实现货供应
IXFN
23+
标准封装
5000
原厂授权一级代理 IGBT模块 可控硅 晶闸管 熔断器质保

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