120 Amp Rectifier 20 to 100 Volts Schottky Barrier

Features · Metal of siliconrectifier, majonty carrier conducton · Guard ring for transient protection · Low power loss high efficiency · High surge capacity, High current capability

SCHOTTKY DIODES MODULE TYPE 120A

Features High Surge Capability Types Up to 100V VRRM

120 Amp Schottky Rectifier

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Silicon Schottky Diode, 120A

Features • Guard Ring Protection • Low forward voltage drop • High surge current capability • Up to 100V VRRM

Silicon Power Schottky Diode

Features • High Surge Capability • Types from 20 V to 40 V VRRM • Not ESD Sensitive

SCHOTTKY DIODES MODULE TYPE 120A

Features High Surge Capability Types Up to 100V VRRM

SCHOTTKY DIODES MODULE TYPE 120A

Features High Surge Capability Types Up to 100V VRRM

Silicon Power Schottky Diode

Features • High Surge Capability • Types from 20 V to 40 V VRRM • Not ESD Sensitive

SCHOTTKY DIODES MODULE TYPE 120A

Features High Surge Capability Types Up to 100V VRRM

Schottky PowerMod

文件：123.64 Kbytes Page：2 Pages

HIGH POWER-SCHOTTKY RECTIFIERS

文件：442.02 Kbytes Page：2 Pages

Silicon Power Schottky Diode

文件：723.57 Kbytes Page：3 Pages

封装/外壳：双塔架 包装：散装 描述：DIODE MODULE 40V 120A 2TOWER 分立半导体产品 二极管 - 整流器 - 阵列

Schottky Rectifiers

Schottky Rectifiers

Silicon Power Schottky Diode

文件：723.57 Kbytes Page：3 Pages

封装/外壳：双塔架 包装：散装 描述：DIODE MODULE 40V 120A 2TOWER 分立半导体产品 二极管 - 整流器 - 阵列

HIGH POWER-SCHOTTKY RECTIFIERS

文件：442.02 Kbytes Page：2 Pages

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

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Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs

POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast

Schottky PowerMod

Schottky PowerMod ● Schottky Barrier Rectifier ● Guard Ring Protection ● 120 Amperes/35 to 50 Volts ● 175°C Junction Temperature ● Reverse Energy Tested ● ROHS Compliant

120 Amp Rectifier 20 to 100 Volts Schottky Barrier

Features • Metal of siliconrectifier, majonty carrier conducton • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability