10A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER

Features • Schottky Barrier Chip • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • High Current Capability and Low Forward Voltage Drop • For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection

Dual Common-Cathode High-Voltage Schottky Rectifier

FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS    Fo

Wide Temperature Range and High Tjm Schottky Barrier Rectifiers

FEATURES * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity protection applica

10 AMPERES SCHOTTKY BARRIER RECTIFIERS

FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency. • High current capability • Guardring for overvlotage

Dual High-Voltage Schottky Barrier Rectifiers

Reverse Voltage 90 to 100 Volts Forward Current 10.0 Ampere Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Dual rectifier construction, positive center tap • Metal silicon junction, majority carrier conduction • Low power loss, high effi

SCHOTTKY BARRIER RECTIFIER

Reverse Voltage - 20 to 100 Volts Forward Current -10.0 Amperes FEATURES ♦ The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ♦ Construction utilizes void-free molded plastic technique ♦ Low reverse leakage ♦ High forward surge current capability ♦

10.0AMP. Schottky Barrier Rectifiers

Features ◇ Plastic material used carries Underwriters Laboratory Classifications 94V-0 ◇ Metal silicon junction, majority carrier conduction ◇ Low power loss, high efficiency ◇ High current capability, low forward voltage drop ◇ High surge capability ◇ For use in low voltage, high freque

DUAL SCHOTTKY RECTIFIERS

VOLTAGE RANGE: 80 - 100 V CURRENT: 10 A FEATURES ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free 111wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Gua

SCHOTTKY BARRIER RECTIFIER

FEATURES ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss,High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters,Free Wheeling, and Polarity Protection Ap

10.0AMPS. Schottky Barrier Rectifiers

REVERSE VOLTAGE 40 to 200 Volts RORWARD CURRENT 10.0 Amperes

SCHOTTKY BARRIER RECTIFIERS

FEATURES ◇ High surge capacity. ◇ For use in low voltage, high frequencyinverters, free wheeling, and polarityprotection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard ring for over voltage protection.

Schottky Barrier Rectifiers

Features ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard ring for over voltage protection.

功率肖特基二极管(IF ≧ 1A)

Lower power losses, high efficiency

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丝印代码：MDDMBR1090CT；SCHOTTKY BARRIER RECTIFIER

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Dual Common-Cathode High Voltage Schottky Rectifier

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High Tjm Low IRRM Schottky Barrier Diodes

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Dual Common Cathode Schottky Rectifier

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10.0 AMPS. Schottky Barrier Rectifiers

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Dual Common-Cathode High Voltage Schottky Rectifier

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10.0 AMPS. Schottky Barrier Rectifiers

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10A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER

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Lower power losses, high efficiency

FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS Fo

Dual Common Cathode High Voltage Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance p

Dual Common Cathode High Voltage Schottky Rectifier

Trench MOS Schottky technology\nLower power losses, high efficiency\nLow forward voltage drop;

Dual Common Cathode High Voltage Schottky Rectifier

分立 ·Trench MOS Schottky technology\n·Lower power losses, high efficiency\n·Low forward voltage drop;

Dual Common Cathode High Voltage Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance p

Dual Common-Cathode High Voltage Schottky Rectifier

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Dual Common-Cathode High Voltage Schottky Rectifier

文件：138.05 Kbytes Page：5 Pages

Dual Common-Cathode High Voltage Schottky Rectifier

文件：108.78 Kbytes Page：5 Pages

封装/外壳：TO-220-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：10 AMPERES SCHOTTKY BARRIER RECT 分立半导体产品 二极管 - 整流器 - 阵列

10 AMPERES SCHOTTKY BARRIER RECTIFIERS

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封装/外壳：TO-220-3 包装：管件 描述：DIODE ARRAY SCHOTTKY 90V TO220AB 分立半导体产品 二极管 - 整流器 - 阵列

SWITCHMODE??Power Rectifiers

SCHOTTKY BARRIER RECTIFIERS 10 AMPERES 60 to 100 VOLTS . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guard–Ring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temperature • Guara

MICROWAVE POWER TRANSISTORS

The RF Line Microwave Pulse Power Transistors Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 90 Watts Peak Minimum Gain = 8.4 dB • 100 Tested for Load Mismatch a

MICROWAVE POWER TRANSISTORS

The RF Line Microwave Pulse Power Transistors Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 90 Watts Peak Minimum Gain = 8.4 dB • 100 Tested for Load Mismatch a

MICROWAVE POWER TRANSISTORS

The RF Line Microwave Pulse Power Transistors Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 90 Watts Peak Minimum Gain = 8.4 dB • 100 Tested for Load Mismatch a

11-Output Configurable Clock Buffer

TriQuint’s TQ1090 is a configurable clock buffer which generates 11 outputs, operating over a wide range of frequencies from 33 MHz to 45MHz, 65 MHz to 90 MHz and 130 MHz to 180 MHz. The outputs are available at 1x, 2x and 4x, or at 1/2x, 1x and 2x, or at 1/4 x, 1/2 x and 1x the reference clock fr