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型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
MBR1090CT | 10A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER Features • Schottky Barrier Chip • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • High Current Capability and Low Forward Voltage Drop • For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection | DIODES 美台半导体 | ||
MBR1090CT | Dual Common-Cathode High-Voltage Schottky Rectifier FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS Fo | VishayVishay Siliconix 威世科技威世科技半导体 | ||
MBR1090CT | Wide Temperature Range and High Tjm Schottky Barrier Rectifiers FEATURES * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity protection applica | SIRECTIFIER 矽莱克电子 | ||
MBR1090CT | 10 AMPERES SCHOTTKY BARRIER RECTIFIERS FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency. • High current capability • Guardring for overvlotage | PANJIT 強茂 | ||
MBR1090CT | Dual High-Voltage Schottky Barrier Rectifiers Reverse Voltage 90 to 100 Volts Forward Current 10.0 Ampere Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Dual rectifier construction, positive center tap • Metal silicon junction, majority carrier conduction • Low power loss, high effi | Good-Ark | ||
MBR1090CT | SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 100 Volts Forward Current -10.0 Amperes FEATURES ♦ The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ♦ Construction utilizes void-free molded plastic technique ♦ Low reverse leakage ♦ High forward surge current capability ♦ | CHENDA 辰达半导体 | ||
MBR1090CT | Schottky Barrier Rectifiers Features ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard ring for over voltage protection. | LUGUANG 鲁光电子 | ||
MBR1090CT | 10.0AMPS. Schottky Barrier Rectifiers
| GXELECTRONICS 星合电子 | ||
MBR1090CT | REVERSE VOLTAGE 40 to 200 Volts RORWARD CURRENT 10.0 Amperes
| FORMOSA 美丽微半导体 | ||
MBR1090CT | SCHOTTKY BARRIER RECTIFIERS FEATURES ◇ High surge capacity. ◇ For use in low voltage, high frequencyinverters, free wheeling, and polarityprotection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard ring for over voltage protection. | SY 顺烨电子 | ||
MBR1090CT | SCHOTTKY BARRIER RECTIFIER FEATURES ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss,High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters,Free Wheeling, and Polarity Protection Ap | JIANGSU 长电科技 | ||
MBR1090CT | 10.0AMP. Schottky Barrier Rectifiers Features ◇ Plastic material used carries Underwriters Laboratory Classifications 94V-0 ◇ Metal silicon junction, majority carrier conduction ◇ Low power loss, high efficiency ◇ High current capability, low forward voltage drop ◇ High surge capability ◇ For use in low voltage, high freque | LUGUANG 鲁光电子 | ||
MBR1090CT | DUAL SCHOTTKY RECTIFIERS VOLTAGE RANGE: 80 - 100 V CURRENT: 10 A FEATURES ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free 111wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Gua | DSK | ||
MBR1090CT | Lower power losses, high efficiency 文件:1.64441 Mbytes Page:4 Pages | KERSEMI | ||
MBR1090CT | SCHOTTKY BARRIER RECTIFIER 文件:573 Kbytes Page:2 Pages | CHENDA 辰达半导体 | ||
MBR1090CT | 10.0 AMPS. Schottky Barrier Rectifiers 文件:169.78 Kbytes Page:2 Pages | TSC 台湾半导体 | ||
MBR1090CT | Dual Common-Cathode High Voltage Schottky Rectifier 文件:138.05 Kbytes Page:5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | ||
MBR1090CT | High Tjm Low IRRM Schottky Barrier Diodes 文件:92.52 Kbytes Page:2 Pages | SIRECTIFIER 矽莱克电子 | ||
MBR1090CT | Dual Common Cathode Schottky Rectifier 文件:201.82 Kbytes Page:4 Pages | TSC 台湾半导体 | ||
MBR1090CT | 10.0 AMPS. Schottky Barrier Rectifiers 文件:196.9 Kbytes Page:2 Pages | TSC 台湾半导体 | ||
MBR1090CT | Dual Common-Cathode High Voltage Schottky Rectifier 文件:134.85 Kbytes Page:5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | ||
MBR1090CT | 10A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER 文件:64.379 Kbytes Page:2 Pages | DIODES 美台半导体 | ||
Lower power losses, high efficiency FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS Fo | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Dual Common Cathode High Voltage Schottky Rectifier FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance p | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Dual Common Cathode High Voltage Schottky Rectifier FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance p | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Dual Common-Cathode High Voltage Schottky Rectifier 文件:134.85 Kbytes Page:5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Dual Common-Cathode High Voltage Schottky Rectifier 文件:138.05 Kbytes Page:5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Dual Common-Cathode High Voltage Schottky Rectifier 文件:108.78 Kbytes Page:5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | |||
封装/外壳:TO-220-3 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:10 AMPERES SCHOTTKY BARRIER RECT 分立半导体产品 二极管 - 整流器 - 阵列 | PANJIT 強茂 | |||
10 AMPERES SCHOTTKY BARRIER RECTIFIERS 文件:722.04 Kbytes Page:3 Pages | DYELECDIYI Electronic Technology Co., Ltd. 迪一电子山东迪一电子科技有限公司 | |||
封装/外壳:TO-220-3 包装:管件 描述:DIODE ARRAY SCHOTTKY 90V TO220AB 分立半导体产品 二极管 - 整流器 - 阵列 | ETC 知名厂家 | ETC | ||
Inst, 50 Pr #16 Str BC, PVC-NYL Ins E1, OS, Blk PVC Jkt, 600V TC-ER 150V NPLF TFN Product Description UL Instrumentation, 50 Pair 16AWG (7x24) Bare Copper, PVC-NYL Insulation E1 Color Code, Overall Beldfoil® Shield, Black PVC Outer Jacket, 600V TC-ER 150V NPLF TFN 90C Dry 75C Wet SUN RES DIR BUR | BELDEN 百通 | |||
90 Watts, 50 Volts, Pulsed Avionics 1025 - 1150 MHz [GHz-Technology] GENERAL DESCRIPTION The 1090MP is a COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1025-1150 MHz. The transistor includes input prematch for broadband capability. The device has gold thinfilm metallization for proven highest MTTF. Low the | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
90 Watts, 50 Volts, Class C Avionics 1025 - 1150 MHz GENERAL DESCRIPTION The 1090MP is a COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1025-1150 MHz. The device has gold thin-film metallization for proven highest MTTF. The transistor includes input prematch for broadband capability. Low thermal resistance p | ADPOW | |||
90 Watts, 50 Volts, Class C Avionics 1025 - 1150 MHz GENERAL DESCRIPTION The 1090MP is a COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1025-1150 MHz. The device has gold thin-film metallization for proven highest MTTF. The transistor includes input prematch for broadband capability. Low thermal resistance p | Microsemi 美高森美 | |||
Non-Relampable Neon Indicator Lights 文件:220.44 Kbytes Page:1 Pages | CML |
MBR1090CT产品属性
- 类型
描述
- 型号
MBR1090CT
- 功能描述
肖特基二极管与整流器 10 Amp 90 Volt Dual
- RoHS
否
- 制造商
Skyworks Solutions, Inc.
- 产品
Schottky Diodes
- 峰值反向电压
2 V
- 正向连续电流
50 mA
- 配置
Crossover Quad
- 正向电压下降
370 mV
- 最大功率耗散
75 mW
- 工作温度范围
- 65 C to + 150 C
- 安装风格
SMD/SMT
- 封装/箱体
SOT-143
- 封装
Reel
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
中性 |
24+ |
TO220-3 |
7800 |
全新原厂原装正品现货,低价出售,实单可谈 |
|||
ON/DIODES/PANJIT |
24+ |
TO220AB |
43000 |
||||
DIODES/美台 |
22+ |
TO-2202LEADSTANDA |
25000 |
只做原装进口现货,专注配单 |
|||
性 |
24+ |
NA/ |
10 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
DIODES/美台 |
2022+ |
TO-220AB |
12888 |
原厂代理 终端免费提供样品 |
|||
24+ |
N/A |
57000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
中性 |
23+ |
TO220-3 |
50000 |
全新原装正品现货,支持订货 |
|||
MDD |
24+ |
con |
35960 |
查现货到京北通宇商城 |
|||
ST/ON/IR |
22+ |
TO-220 |
12950 |
原装正品,实单请联系 |
|||
DIODES |
25+ |
TO-TO-2202LE |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
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MBR1090CT规格书下载地址
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