10A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER

Features • Schottky Barrier Chip • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • High Current Capability and Low Forward Voltage Drop • For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection

SCHOTTKY BARRIER RECTIFIER

FEATURES ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss,High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters,Free Wheeling, and Polarity Protection Ap

SCHOTTKY BARRIER RECTIFIER

Reverse Voltage - 20 to 100 Volts Forward Current -10.0 Amperes FEATURES ♦ The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ♦ Construction utilizes void-free molded plastic technique ♦ Low reverse leakage ♦ High forward surge current capability ♦

Wide Temperature Range and High Tjm Schottky Barrier Rectifiers

FEATURES * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity protection applica

High Tjm Low IRRM Schottky Barrier Diodes

文件：92.52 Kbytes Page：2 Pages

丝印代码：MDDMBR1070CT；SCHOTTKY BARRIER RECTIFIER

文件：573 Kbytes Page：2 Pages

封装/外壳：TO-220-3 包装：管件 描述：DIODE ARRAY SCHOTTKY 70V TO220AB 分立半导体产品 二极管 - 整流器 - 阵列

DIODE ARRAY SCHOTTKY 70V TO220AB

10A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER

文件：64.379 Kbytes Page：2 Pages

10A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER

Features • Schottky Barrier Chip • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • High Current Capability and Low Forward Voltage Drop • For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection

High Tjm Low IRRM Schottky Barrier Diodes

文件：92.52 Kbytes Page：2 Pages

SWITCHMODE??Power Rectifiers

SCHOTTKY BARRIER RECTIFIERS 10 AMPERES 60 to 100 VOLTS . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guard–Ring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temperature • Guara

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR?

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetime

Multistandard programmable analog CMOS transmission IC

GENERAL DESCRIPTION The PCA1070 is a CMOS integrated circuit performing all speech and line interface functions in fully electronic telephone sets. The device requires a minimum of external components. The transmission parameters are programmable via the I2C-bus. This makes the IC adaptable to ne

Multistandard programmable analog CMOS transmission IC

GENERAL DESCRIPTION The PCA1070 is a CMOS integrated circuit performing all speech and line interface functions in fully electronic telephone sets. The device requires a minimum of external components. The transmission parameters are programmable via the I2C-bus. This makes the IC adaptable to ne

Multistandard programmable analog CMOS transmission IC

GENERAL DESCRIPTION The PCA1070 is a CMOS integrated circuit performing all speech and line interface functions in fully electronic telephone sets. The device requires a minimum of external components. The transmission parameters are programmable via the I2C-bus. This makes the IC adaptable to ne