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型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
MBR1030 | 10A SCHOTTKY BARRIER RECTIFIER Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss, High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Pro | DIODES 美台半导体 | ||
MBR1030 | 10 AMP SCHOTTKY BARRIER RECTIFIERS 10 Amp Schottky Barrier Rectifiers ● Schottky barrier rectifier ● Guard ring protection ● Low power loss, high efficiency ● VRRM 30 to 40 Volts ● Reverse energy tested | Microsemi 美高森美 | ||
MBR1030 | SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE: 30 - 100 V CURRENT: 10 A FEATURES High surge capacity. For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. Metal silicon junction, majority carrier conduction. High current capacity, low forward voltage drop. Guard ring for ov | BILIN 银河微电 | ||
MBR1030 | Wide Temperature Range and High Tjm Schottky Barrier Rectifiers FEATURES * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity protection applica | SIRECTIFIER 矽莱克电子 | ||
MBR1030 | 10 AMPERES SCHOTTKY BARRIER RECTIFIERS FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency. • High current capability • Guardring for overvlotage protection | PANJIT 強茂 | ||
MBR1030 | 10Amp schottky barrier rectifier 20to100 volts Features • Metal of siliconrectifier, majonty carrier conducton • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability | CHENYI 商朗电子 | ||
MBR1030 | SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE - 30 to 100Volts FORWARD CURRENT - 10.0 Amperes FEATURES ● Metal of silicon rectifier, majority carrier conduction ● Guard ring for transient protection ● Low power loss, high efficiency ● High current capability, low VF ● High surge capacity ● Plastic package has UL flamma | HY | ||
MBR1030 | 10 Amp Schottky Barrier Rectifier 20 to 100 Volts Features • Metal of siliconrectifier, majonty carrier conducton • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability • Lead Free Finish/RoHS Compliant(Note 1) (P Suffix designates RoHS Compliant. See ordering information) • | MCC 美微科 | ||
MBR1030 | Metal of siliconrectifier, majonty carrier conducton Features • Metal of siliconrectifier, majonty carrier conducton • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability | KERSEMI | ||
MBR1030 | Metal of siliconrectifier, majonty carrier conducton Features • Metal of siliconrectifier, majonty carrier conducton • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability | KERSEMI | ||
MBR1030 | Schottky Barrier Rectifiers VOLTAGE RANGE: 30 - 100 V CURRENT: 10 A Features ✧ High surge capacity. ✧ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ✧ Metal silicon junction, majority carrier conduction. ✧ High current capacity, low forward voltage drop. ✧ Gua | LUGUANG 鲁光电子 | ||
MBR1030 | SCHOTTKY BARRIER RECTIFIERS VOLTAGE RANGE: 30 - 100 V CURRENT: 10 A FEATURES ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard | DSK | ||
MBR1030 | SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 100 Volts Forward Current -10.0 Amperes FEATURES ♦ The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ♦ Construction utilizes void-free molded plastic technique ♦ Low reverse leakage ♦ High forward surge current capability ♦ | CHENDA 辰达半导体 | ||
MBR1030 | Metal of siliconrectifier, majonty carrier conducton This series of SWITCHMODE power rectifiers uses the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features: Features • Guard−Ring for Stress Protection • Low Forward Voltage • 175°C Operating Junction Temperature • Epoxy Meets UL 9 | KERSEMI | ||
MBR1030 | SCHOTTKY BARRIER RECTIFIER SCHOTTKY BARRIER RECTIFIER FEATURES ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss,High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters,Free Wheeling | JIANGSU 长电科技 | ||
MBR1030 | Metal of siliconrectifier, majonty carrier conducton This series of SWITCHMODE power rectifiers uses the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features: Features • Guard−Ring for Stress Protection • Low Forward Voltage • 175°C Operating Junction Temperature • Epoxy Meets UL 9 | KERSEMI | ||
MBR1030 | Metal of silicon rectifier , majority carrier conduction Reverse Voltage - 20 to 200 Volts Forward Current - 10.0Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Metal silicon junction ,majority carrier conduction • Guard ring for overvoltage protection • Low power loss ,high efficiency • | GXELECTRONICS 星合电子 | ||
MBR1030 | Schottky Barrier Rectifier FEATURES • Schottky Barrier Chip • Guard Ring Die Construction for Transient Protection • Low Power Loss/High Efficiency • High Surge Capability • High Current Capability, Low Forward Voltage Drop • Plastic Material: UL Flammability • Minimum Lot-to-Lot variations for robust device performa | ISC 无锡固电 | ||
MBR1030 | Metal of siliconrectifier, majonty carrier conducton Features • Metal of siliconrectifier, majonty carrier conducton • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability | KERSEMI | ||
MBR1030 | 10A SCHOTTKY BARRIER RECTIFIER Features • Metal of siliconrectifier, majonty carrier conducton • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability | KERSEMI | ||
MBR1030 | SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 200 Volts Forward Current - 10.0Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Metal silicon junction ,majority carrier conduction • Guard ring for overvoltage protection • Low power loss ,high efficiency • | GXELECTRONICS 星合电子 | ||
MBR1030 | SCHOTTKY BARRIER RECTIFIER FEATURES Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free xxxx wheeling,and polarity protection applications The plastic material carries U/L recogniti | SAMYANG 三阳电子 | ||
MBR1030 | SCHOTTKY BARRIER RECTIFIER FEATURES Metal-semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94 | SAMYANG 三阳电子 | ||
MBR1030 | SCHOTTKY BARRIER RECTIFIER FEATURES Metal-semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94 | SAMYANG 三阳电子 | ||
MBR1030 | SCHOTTKY BARRIER RECTIFIER Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Construction utilizes void-free molded plastic technique Low reverse leakage High forward surge current capability High temperature soldering guaranteed: 250 C,0.25”(6.35mm) from case for 10 seco | SY 顺烨电子 | ||
MBR1030 | 封装/外壳:TO-220-2 包装:卷带(TR) 描述:DIODE SCHOTTKY 30V 10A TO220AC 分立半导体产品 二极管 - 整流器 - 单 | PAMDiodes Incorporated 龙鼎微龙鼎微电子(上海)有限公司 | ||
MBR1030 | Schottky Barrier Recitifiers 文件:443.35 Kbytes Page:3 Pages | HY | ||
MBR1030 | SCHOTTKY BARRIER RECTIFIER 文件:1.23352 Mbytes Page:2 Pages | CHENDA 辰达半导体 | ||
MBR1030 | SCHOTTKY BARRIER RECTIFIERS 文件:141.83 Kbytes Page:3 Pages | HY | ||
MBR1030 | 10 Amp Schottky Barrier Rectifier 20 to 100 Volts 文件:434.48 Kbytes Page:3 Pages | MCC 美微科 | ||
MBR1030 | High Tjm Low IRRM Schottky Barrier Diodes 文件:87.81 Kbytes Page:2 Pages | SIRECTIFIER 矽莱克电子 | ||
MBR1030 | 10 Amp Schottky Barrier Rectifier 20 to 100 Volts 文件:112.59 Kbytes Page:3 Pages | MCC 美微科 | ||
MBR1030 | 10A SCHOTTKY BARRIER RECTIFIER 文件:72.31 Kbytes Page:3 Pages | DIODES 美台半导体 | ||
MBR1030 | 10A SCHOTTKY BARRIER RECTIFIER 文件:75.69 Kbytes Page:3 Pages | DIODES 美台半导体 | ||
SCHOTTKY BARRIER RECTIFIERS FEATURES Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Metal silicon junction ,majority carrier conduction Guard ring for overvoltage protection Low power loss ,high efficiency High current capability ,Low forward voltage drop High surge capability For use in | SAMYANG 三阳电子 | |||
SCHOTTKY BARRIER RECTIFIERS FEATURES Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Metal silicon junction ,majority carrier conduction Guard ring for overvoltage protection Low power loss ,high efficiency High current capability ,Low forward voltage drop High surge capability For use in | SAMYANG 三阳电子 | |||
SCHOTTKY RECTIFIERS VOLTAGE 20~200 Volts CURRENT 10 Ampers FEATURES • Power pack • Metal silicon junction ,majority carrier conduction • Guard ring for overvoltage protection • Low power loss ,high efficiency • High current capability ,low forward voltage drop • High forward surge capability • High frequency | NIUHANG 纽航电子 | |||
Metal of siliconrectifier, majonty carrier conducton Features • Metal of siliconrectifier, majonty carrier conducton • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability | KERSEMI | |||
SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 100 Volts Forward Current -10.0 Amperes FEATURES ♦ The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ♦ Construction utilizes void-free molded plastic technique ♦ Low reverse leakage ♦ High forward surge current capability ♦ | CHENDA 辰达半导体 | |||
Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rec | MOSPEC 统懋 | |||
SCHOTTKY BARRIER RECTIFIER FEATURES Metal-semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94 | SAMYANG 三阳电子 | |||
SCHOTTKY BARRIER RECTIFIER FEATURES Metal-semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94 | SAMYANG 三阳电子 | |||
10A SCHOTTKY BARRIER RECTIFIER Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss, High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protect | DIODES 美台半导体 | |||
10 Am p Schott ky Barrier Rectifier 30-60 Volts Features • Metal of Silicon Rectifier, Majority Carrier Conduction • Halogen Free Available Upon Request By Adding Suffix -HF • Low Power Loss High Efficiency • High Surge Capacity, High Current Capability • Lead Free Finish/RoHS Compliant(Note 1) (P Suffix Designates Compliant. See Order | MCC 美微科 | |||
DUAL SCHOTTKY RECTIFIERS VOLTAGE RANGE: 20 - 60 V CURRENT: 10 A FEATURES ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guar | BILIN 银河微电 | |||
10 AMPERES SCHOTTKY BARRIER RECTIFIERS FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency. • High current capability • Guardring for overvlotage | PANJIT 強茂 | |||
10.0 AMPS. Schottky Barrier Rectifiers Voltage Range 30 to 200 Volts Current 10.0 Amperes Features ◇ Plastic material used carries Underwriters Laboratory Classifications 94V-0 ◇ Metal silicon junction, majority carrier conduction ◇ Low power loss, high efficiency ◇ High current capability, low forward voltage drop ◇ High sur | TSC 台湾半导体 | |||
10Amp schottky barrier rectifier 30-60volts Features • Metal of siliconrectifier, majonty carrier conducton • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability | CHENYI 商朗电子 | |||
Schottky Barrier Recitifier PRODUCT SUMMARY TO-220 Plastic-Encapsulate Transistors FEATURES Scottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency Very low forward voltage drop High Surge Capability High Current Capability and Low Forward Voltage Dr | SSC Silicon Standard Corp. | |||
SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE - 30 to 100Volts FORWARD CURRENT - 10.0 Amperes FEATURES ● Guard ring for transient protection ● Low power loss,high efficiency ● High current capability,low VF ● High surge capacity ● Metal of silicon rectifier , majority carrier conduction ● Plastic package has UL flammab | HY | |||
Wide Temperature Range and High Tjm Schottky Barrier Rectifiers FEATURES * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity protection app | SIRECTIFIER 矽莱克电子 | |||
Metal of siliconrectifier, majonty carrier conducton Features • Metal of siliconrectifier, majonty carrier conducton • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability | KERSEMI | |||
Metal of siliconrectifier, majonty carrier conducton Features • Metal of siliconrectifier, majonty carrier conducton • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability | KERSEMI | |||
DUAL SCHOTTKY RECTIFIERS VOLTAGE RANGE: 20 - 60 V CURRENT: 10 A FEATURES ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guar | DSK | |||
10A SCHOTTKY RECTIFIER 10A SCHOTTKY RECTIFIER Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. | DIGITRON | |||
ITO-220AB Features ◇ Plastic material used carries Underwriters Laboratory Classifications 94V-0 ◇ Metal silicon junction, majority carrier conduction ◇ Low power loss, high efficiency ◇ High current capability, low forward voltage drop ◇ High surge capability ◇ For use in low voltage, high freque | LUGUANG 鲁光电子 | |||
Metal of siliconrectifier, majonty carrier conducton Features • Metal of siliconrectifier, majonty carrier conducton • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability | KERSEMI | |||
Metal of siliconrectifier, majonty carrier conducton Features • Metal of siliconrectifier, majonty carrier conducton • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability | KERSEMI | |||
Schottky Barrier Rectifiers Features ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard ring for over voltage protection. | LUGUANG 鲁光电子 | |||
SCHOTTKY BARRIER RECTIFIER FEATURES • Schottky Barrier Chip • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • High Current Capability and Low Forward Voltage Drop • For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protect | WINNERJOIN 永而佳 |
MBR1030产品属性
- 类型
描述
- 型号
MBR1030
- 功能描述
肖特基二极管与整流器 10A 30V
- RoHS
否
- 制造商
Skyworks Solutions, Inc.
- 产品
Schottky Diodes
- 峰值反向电压
2 V
- 正向连续电流
50 mA
- 配置
Crossover Quad
- 正向电压下降
370 mV
- 最大功率耗散
75 mW
- 工作温度范围
- 65 C to + 150 C
- 安装风格
SMD/SMT
- 封装/箱体
SOT-143
- 封装
Reel
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
EDA |
16+ |
TO-220 |
2560 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
Reasunos瑞森 |
1948+ |
TO-220AB |
18562 |
只做原装正品现货!或订货假一赔十! |
|||
扬杰 |
25+ |
ITO-220AC |
10000 |
扬杰原厂一级代理商,价格优势! |
|||
CJ/长电 |
24+ |
TO-220F |
50000 |
只做原装,欢迎询价,量大价优 |
|||
DIODES/美台 |
25+ |
NA |
880000 |
明嘉莱只做原装正品现货 |
|||
DIODES |
23+ |
TO-220 |
10000 |
专做原装正品,假一罚百! |
|||
DIODES/美台 |
22+ |
TO-220-2 |
25000 |
只做原装进口现货,专注配单 |
|||
ON/DIODES/PANJIT |
24+ |
TO220AC |
43000 |
||||
CJ/长电 |
23+ |
TO-220F |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
DIODES/美台 |
2447 |
TO-220 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
MBR1030规格书下载地址
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2019-2-25
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