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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MBR10100-M3 | High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC | VishayVishay Siliconix 威世威世科技公司 |   | |
MBR10100-M3 | High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vish | VishayVishay Siliconix 威世威世科技公司 | | |
High-Voltage Schottky Rectifier 文件：116.69 Kbytes Page：4 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
封装/外壳：TO-220-2 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE SCHOTTKY 100V 10A TO220AC 分立半导体产品 二极管 - 整流器 - 单 | ETC 知名厂家 | ETC | | |
High-Voltage Schottky Rectifier 文件：116.69 Kbytes Page：4 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC | VishayVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Material categorization: For definitions of compliance | VishayVishay Siliconix 威世威世科技公司 | | ||
High-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Material categorization: for definitions of compliance plea | VishayVishay Siliconix 威世威世科技公司 | |
MBR10100-M3产品属性
- 类型
描述
- 型号
MBR10100-M3
- 制造商
Vishay Semiconductors
- 功能描述
10A,100V,TRENCH SKY RECT.
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
22+ |
TO-220-2 |
100000 |
代理渠道/只做原装/可含税 |
|||
VISHAY |
25+23+ |
TO-220-2 |
15707 |
绝对原装正品全新进口深圳现货 |
|||
VISHAY(威世) |
24+ |
TO-220-2 |
942 |
特价优势库存质量保证稳定供货 |
|||
VISHAY/威世 |
24+ |
TO-220-2 |
5000 |
全新原装正品,现货销售 |
|||
VISHAY(威世) |
24+ |
TO-220-2 |
5098 |
百分百原装正品,可原型号开票 |
|||
VISHAY/威世 |
2447 |
SMD |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
VISHAY/威世 |
1741 |
TO-220-2 |
980 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
VISHAY |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
VISHAY/威世 |
26+ |
TO-220-2 |
12000 |
原装，正品 |
|||
VISHAY/威世 |
24+ |
TO-220-2 |
60000 |
MBR10100-M3规格书下载地址
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DdatasheetPDF页码索引
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