型号 功能描述 生产厂家 企业 LOGO 操作

4 Megabit (512K x 8-bit) Flash Memory

GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur

EON

宜扬科技

4 Megabit (512K x 8-bit) Flash Memory

GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur

EON

宜扬科技

4 Megabit (512K x 8-bit) Flash Memory

GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur

EON

宜扬科技

4 Megabit (512K x 8-bit) Flash Memory

GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur

EON

宜扬科技

4 Megabit (512K x 8-bit) Flash Memory

GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur

EON

宜扬科技

更新时间:2025-11-1 11:54:01
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
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03+
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630
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EON
23+
DIP
10000
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EON
23+
DIP32
12800
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23+
原厂正规渠道
5000
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2447
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100500
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EON
23+
DIP
50000
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EON
2016+
DIP
9000
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