型号 功能描述 生产厂家 企业 LOGO 操作
MBM29DL324BE

32M (4M x 8/2M x 16) BIT Dual Operation

■ DESCRIPTION The MBM29DL32XTE/BE are a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes of 8 bits each or 2M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase

Fujitsu

富士通

32M (4M x 8/2M x 16) BIT Dual Operation

■ DESCRIPTION The MBM29DL32XTE/BE are a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes of 8 bits each or 2M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase

Fujitsu

富士通

32M (4M x 8/2M x 16) BIT Dual Operation

■ DESCRIPTION The MBM29DL32XTE/BE are a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes of 8 bits each or 2M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase

Fujitsu

富士通

32M (4M x 8/2M x 16) BIT Dual Operation

■ DESCRIPTION The MBM29DL32XTE/BE are a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes of 8 bits each or 2M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase

Fujitsu

富士通

32M (4M x 8/2M x 16) BIT Dual Operation

■ DESCRIPTION The MBM29DL32XTE/BE are a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes of 8 bits each or 2M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase

Fujitsu

富士通

32M (4M x 8/2M x 16) BIT Dual Operation

■ DESCRIPTION The MBM29DL32XTE/BE are a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes of 8 bits each or 2M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase

Fujitsu

富士通

32M (4M x 8/2M x 16) BIT Dual Operation

■ DESCRIPTION The MBM29DL32XTE/BE are a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes of 8 bits each or 2M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase

Fujitsu

富士通

32M (4M x 8/2M x 16) BIT Dual Operation

■ DESCRIPTION The MBM29DL32XTE/BE are a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes of 8 bits each or 2M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase

Fujitsu

富士通

32M (4M x 8/2M x 16) BIT Dual Operation

■ DESCRIPTION The MBM29DL32XTE/BE are a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes of 8 bits each or 2M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase

Fujitsu

富士通

32M (4M x 8/2M x 16) BIT Dual Operation

■ DESCRIPTION The MBM29DL32XTE/BE are a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes of 8 bits each or 2M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase

Fujitsu

富士通

32M (4M x 8/2M x 16) BIT Dual Operation

■ DESCRIPTION The MBM29DL32XTE/BE are a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes of 8 bits each or 2M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase

Fujitsu

富士通

32M (4M x 8/2M x 16) BIT Dual Operation

■ DESCRIPTION The MBM29DL32XTE/BE are a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes of 8 bits each or 2M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase

Fujitsu

富士通

32M (4M x 8/2M x 16) BIT Dual Operation

■ DESCRIPTION The MBM29DL32XTE/BE are a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes of 8 bits each or 2M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase

Fujitsu

富士通

32M (4M x 8/2M x 16) BIT Dual Operation

■ DESCRIPTION The MBM29DL32XTE/BE are a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes of 8 bits each or 2M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase

Fujitsu

富士通

FLASH MEMORY CMOS 32 M (4 M X 8/2 M X 16) BIT Dual Operation

■ DESCRIPTION The MBM29DL32XTE/BE are a 32 M-bit, 3.0 V-only Flash memory organized as 4 Mbytes of 8 bits each or 2 Mwords of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase

spansion

飞索

32M (4M x 8/2M x 16) BIT Dual Operation

■ DESCRIPTION The MBM29DL32XTE/BE are a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes of 8 bits each or 2M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase

Fujitsu

富士通

32M (4M x 8/2M x 16) BIT Dual Operation

■ DESCRIPTION The MBM29DL32XTE/BE are a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes of 8 bits each or 2M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase

Fujitsu

富士通

FLASH MEMORY CMOS 32 M (4 M X 8/2 M X 16) BIT Dual Operation

■ DESCRIPTION The MBM29DL32XTE/BE are a 32 M-bit, 3.0 V-only Flash memory organized as 4 Mbytes of 8 bits each or 2 Mwords of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase

spansion

飞索

32M (4M x 8/2M x 16) BIT Dual Operation

■ DESCRIPTION The MBM29DL32XTE/BE are a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes of 8 bits each or 2M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase

Fujitsu

富士通

32M (4M x 8/2M x 16) BIT Dual Operation

■ DESCRIPTION The MBM29DL32XTE/BE are a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes of 8 bits each or 2M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase

Fujitsu

富士通

FLASH MEMORY CMOS 32 M (4 M X 8/2 M X 16) BIT Dual Operation

■ DESCRIPTION The MBM29DL32XTE/BE are a 32 M-bit, 3.0 V-only Flash memory organized as 4 Mbytes of 8 bits each or 2 Mwords of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase

spansion

飞索

32M (4M x 8/2M x 16) BIT Dual Operation

■ DESCRIPTION The MBM29DL32XTE/BE are a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes of 8 bits each or 2M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase

Fujitsu

富士通

32M-Bit CMOS Low Voltage Dual Operation Flash Memory 4M-Byte by 8-Bit (Byte Mode) / 2M-Word by 16-Bit (Word Mode)

GENERAL DESCRIPTION The A29DL32x family consists of 32 megabit, 3.0 volt-only flash memory devices, organized as 2,097,152 words of 16 bits each or 4,194,304 bytes of 8 bits each. Word mode data appears on I/O0–I/O15; byte mode data appears on I/O0–I/O7. The device is designed to be programmed in

AMICC

联笙电子

32 Megabit (4M x 8-Bit/2M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory

GENERAL DESCRIPTION The A29DL32x family consists of 32 megabit, 3.0 volt-only flash memory devices, organized as 2,097,152 words of 16 bits each or 4,194,304 bytes of 8 bits each. Word mode data appears on I/O0–I/O15; byte mode data appears on I/O0–I/O7. The device is designed to be programmed in

AMICC

联笙电子

32 Megabit (4M x 8-Bit/2M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory

GENERAL DESCRIPTION The A29DL32x family consists of 32 megabit, 3.0 volt-only flash memory devices, organized as 2,097,152 words of 16 bits each or 4,194,304 bytes of 8 bits each. Word mode data appears on I/O0–I/O15; byte mode data appears on I/O0–I/O7. The device is designed to be programmed in

AMICC

联笙电子

Stacked Multi-Chip Package (MCP) Flash Memory and SRAM

文件:953.14 Kbytes Page:58 Pages

AMD

超威半导体

Stacked Multi-Chip Package (MCP) Flash Memory and SRAM

文件:958.81 Kbytes Page:58 Pages

AMD

超威半导体

MBM29DL324BE产品属性

  • 类型

    描述

  • 型号

    MBM29DL324BE

  • 制造商

    FUJITSU

  • 制造商全称

    Fujitsu Component Limited.

  • 功能描述

    32M(4M x 8/2M x 16) BIT Dual Operation

更新时间:2025-12-31 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
FUJITSU/富士通
24+
NA/
69
优势代理渠道,原装正品,可全系列订货开增值税票
FUJITSU
2016+
TSOP
9000
只做原装,假一罚十,公司可开17%增值税发票!
FUJI
23+
TSSOP4
20000
全新原装假一赔十
只做原装
24+
BGAP
36520
一级代理/放心采购
FUJITSU/富士通
02+
TSSOP
800
一级代理,专注军工、汽车、医疗、工业、新能源、电力
FUJITSU/富士通
25+
TSSOP
54648
百分百原装现货 实单必成 欢迎询价
SPANSION
24+
BGA
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
FUJITSU/富士通
18+
TSOP
16725
全新原装现货,可出样品,可开增值税发票
FUJITSU
25+
TSSOP
3000
全新原装、诚信经营、公司现货销售!
FUJI
TSOP48
1068
全新原装进口自己库存优势

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